Patents by Inventor Yosuke Nishioka

Yosuke Nishioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing photoelectric converter and phtotelectric converter
    Patent number: 9171972
    Abstract: The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate (2) formed from silicon; a first film-formation step for the formation of a first protective film (3) by deposition of aluminum oxide on a top surface (2B) of the substrate (2) using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film (4) by deposition of aluminum oxide on the first protective film (3) using sputtering after the first film-formation step. Moreover, the photoelectric converter of the present invention comprises a substrate formed from silicon; a first protective film formed from aluminum oxide; and a second protective film formed from aluminum oxide, wherein the concentration of hydrogen contained in the first protective film is higher than the concentration of hydrogen contained in the second protective film.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: October 27, 2015
    Assignee: KYOCERA Corporation
    Inventors: Shiro Miyazaki, Tomofumi Honjo, Koji Niwa, Hironori Kii, Shigeo Aono, Yosuke Nishioka
  • METHOD FOR PRODUCING PHOTOELECTRIC CONVERTER AND PHOTOELECTRIC CONVERTER
    Publication number: 20150001657
    Abstract: The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate (2) that has a photoelectric conversion layer (2a) and is formed from silicon; a first film-formation step for the formation of a first protective film (3) by deposition of aluminum oxide on a top surface (2B) of the substrate (2) using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film (4) by deposition of aluminum oxide on the first protective film (3) using sputtering after the first film-formation step.
    Type: Application
    Filed: January 30, 2013
    Publication date: January 1, 2015
    Applicant: KYOCERA Corporation
    Inventors: Shiro Miyazaki, Tomofumi Honjo, Koji Niwa, Hironori Kii, Shigeo Aono, Yosuke Nishioka