Patents by Inventor Yosuke Serizawa

Yosuke Serizawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ELECTROLYTIC CAPACITOR AND MANUFACTURING METHOD THEREOF
    Publication number: 20220351914
    Abstract: An electrolytic capacitor includes a capacitor element. The capacitor element includes an anode part, a cathode part, and an intermediate part. The anode part includes a first portion that is a part of an anode body having a porous region, and a first dielectric layer. The intermediate part includes a second portion of the anode body, a second dielectric layer, and a first insulating member containing a first resin component. The cathode part includes a third portion of the anode body, a third dielectric layer, a solid electrolyte layer covering at least a part of the third dielectric layer, and a cathode lead-out layer covering at least a part of the solid electrolyte layer. The first resin component contains a curing product of a first reactive compound. At least a part of the first insulating member is disposed in pores of the porous region in the intermediate part.
    Type: Application
    Filed: October 23, 2020
    Publication date: November 3, 2022
    Inventors: DAISUKE USA, YOSUKE SERIZAWA, HONAMI NISHINO
  • Semiconductor film forming method using hydrazine-based compound gas
    Patent number: 11348794
    Abstract: A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: May 31, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hideo Nakamura, Yosuke Serizawa, Yoshikazu Ideno, Hiroaki Ashizawa, Takaya Shimizu, Seishi Murakami
  • FILM FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, FILM FORMING DEVICE, AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20220157600
    Abstract: A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.
    Type: Application
    Filed: March 26, 2020
    Publication date: May 19, 2022
    Inventors: Hiroaki ASHIZAWA, Hideo NAKAMURA, Yosuke SERIZAWA, Yoshikazu IDENO
  • FILM FORMING METHOD AND FILM FORMING APPARATUS
    Publication number: 20190378723
    Abstract: A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.
    Type: Application
    Filed: June 6, 2019
    Publication date: December 12, 2019
    Inventors: Hideo Nakamura, Yosuke Serizawa, Yoshikazu Ideno, Hiroaki Ashizawa, Takaya Shimizu, Seishi Murakami