Abstract: A method for manufacturing a semiconductor device according to the present invention includes a manufacturing step of forming a plurality of unit regions each having a plurality of first regions serving as effective cells in which main current flows, and a second region that has an appearance different from that of the first regions and serves as an ineffective cell in which no main current flows, and an appearance inspection step including a step of imaging the unit region to obtain a captured image, a step of cutting out an inspection image from the captured image based on a position of an alignment pattern containing the second region, and a step of comparing the inspection image with a reference image.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes a manufacturing step of forming a plurality of unit regions each having a plurality of first regions serving as effective cells in which main current flows, and a second region that has an appearance different from that of the first regions and serves as an ineffective cell in which no main current flows, and an appearance inspection step including a step of imaging the unit region to obtain a captured image, a step of cutting out an inspection image from the captured image based on a position of an alignment pattern containing the second region, and a step of comparing the inspection image with a reference image.

Abstract: A method of manufacturing a semiconductor device according to the present invention includes the steps of (b) forming, on a back face of a dummy substrate and back faces of a plurality of semiconductor substrates, inorganic films having such thicknesses as to be resistant to a temperature of a thermal oxidizing treatment or a heat treatment and to sufficiently decrease an amount of oxidation or reducing gaseous species to reach the back faces of the dummy substrate and the plurality of semiconductor substrates, (c) disposing the dummy substrate and the plurality of semiconductor substrates in a lamination with surfaces turned in the same direction at an interval from each other, and (d) carrying out a thermal oxidizing treatment or post annealing over the surfaces of the semiconductor substrates in an oxidation gas atmosphere or a reducing gas atmosphere after the steps (b) and (c).

Abstract: A method of manufacturing a semiconductor device according to the present invention includes the steps of (b) forming, on a back face of a dummy substrate and back faces of a plurality of semiconductor substrates, inorganic films having such thicknesses as to be resistant to a temperature of a thermal oxidizing treatment or a heat treatment and to sufficiently decrease an amount of oxidation or reducing gaseous species to reach the back faces of the dummy substrate and the plurality of semiconductor substrates, (c) disposing the dummy substrate and the plurality of semiconductor substrates in a lamination with surfaces turned in the same direction at an interval from each other, and (d) carrying out a thermal oxidizing treatment or post annealing over the surfaces of the semiconductor substrates in an oxidation gas atmosphere or a reducing gas atmosphere after the steps (b) and (c).