Abstract: A semiconductor device having an input terminal and an output terminal includes at least one high power device for supplying output current as an output section, and over-current limiting circuits, each including a over-current detection circuit, for limiting the amount of each current flowing through a plurality of bonding wires by which the output terminal is connected to an external terminal, to a current value of a desired amount or less. Thereby, an over-current condition where the current value is over an allowable current value, is avoided and blowing the bonding wire of the device can be prevented.

Abstract: A semiconductor device includes a resistor network having a plurality of trimming polysilicon resistors. The polysilicon resistors have the same width and different lengths and can be selectively fused according to the value of current which is caused to flow therein. The resultant resistance of the resistor network is changed by selectively fusing the polysilicon resistors. The output characteristic of the semiconductor device can be adjusted by changing the resultant resistance.

Abstract: At least one power output element made of an insulated gate semiconductor element, a surge protection element for an input electrode of the power output element, and a circuit element block for controlling the power output element, are formed on the same semiconductor substrate. A predetermined electrode of the power output element and one end of the surge protection element are connected to each other. In this state, first, second, and third electrode wiring layers are connected to an output terminal of the circuit element block, the other end of the surge protection element, and the input electrode of the power output element, respectively, and the first to third electrode wiring layers are formed separately from one another. In order to connect the first to third electrode wiring layers to each other, a fourth electrode wiring layer is formed thereon.

Abstract: A mixture of xylene isomers or a mixture of a xylene isomer(s) and ethylbenzene is brought into contact with at least one specific substituted .alpha.-cyclodextrin to form an inclusion complex(es) of the substituted .alpha.-cyclodextrin with a xylene isomer or ethylbenzene included therein, from which the xylene isomer(s) and/or ethylbenzene is then extracted to isolate, or separate, the same. Inclusion-complexing agents usable in isolation, or separation, of the xylene isomer(s) and/or ethylbenzene are substituted .alpha.-cyclodextrin in the form of .alpha.-cyclodextrin having the hydrogen atom of at least one hydroxyl group thereof substituted with at least one member selected from the group consisting of a glucosyl group, a maltosyl group, maltooligosaccharide residues, a hydroxyethyl group, a hydroxypropyl group, a methyl group, a sulfonic group, alkylenesulfonic groups, and carboxyalkyl groups.

Abstract: A mixture of xylene isomers or a mixture of a xylene isomer(s) and ethylbenzene is brought into contact with at least one specific substituted .alpha.-cyclodextrin to form an inclusion complex(es) of the substituted .alpha.-cyclodextrin with a xylene isomer or ethylbenzene included therein, from which the xylene isomer(s) and/or ethylbenzene is then extracted to isolate, or separate, the same. Inclusion-complexing agents usable in isolation, or separation, of the xylene isomer(s) and/or ethylbenzene are substitited .alpha.-cyclodextrin in the form of .alpha.-cyclodextrin having the hydrogen atom of at least one hydroxyl group thereof substituted with at least one member selected from the group consisting of a glucosyl group, a maltosyl group, maltooligosaccharide residues, a hydroxyethyl group, a hydroxypropyl group, a methyl group, a sulfonic group, alkylenesulfonic groups, and carboxyalkyl groups.

Abstract: A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.

Abstract: A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.