Abstract: A driving monitoring device (100) decides an applicable collision pattern that applies to a collision pattern of a case where a vehicle (200) collides with a mobile object, based on a velocity vector of the vehicle, a velocity vector of the mobile object, and so on. Subsequently, the driving monitoring device calculates a time until collision, which is a time taken until the vehicle collides with the mobile object, in the applicable collision pattern. Then, the driving monitoring device calculates a danger level of an accident in which the vehicle collides with the mobile object, based on the applicable collision pattern and the time until collision.

Abstract: An etching method including an etching step of bringing an etching gas which contains nitrosyl fluoride and has been converted into plasma into contact with a member to be etched (9) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching step is performed in a chamber (7) containing the member to be etched (9) using a remote plasma generation device (16) provided outside the chamber (7) as a plasma generation source. The concentration of nitrosyl fluoride in the etching gas is 0.3 vol % or more, the temperature condition of the etching step is 0° C. to 250° C., and the pressure condition of the etching step is 100 Pa or more and 3 kPa or less. The etching object includes silicon nitride. Also disclosed is a method for producing a semiconductor device using the etching method.

Abstract: Provided is a sulfur dioxide mixture that hardly corrodes metals. A sulfur dioxide mixture contains sulfur dioxide and water. The sulfur dioxide mixture is filled in a filling container in such a manner that a gas phase and a liquid phase exist, and the moisture concentration of the gas phase is from 0.005 mole ppm to less than 5,000 mole ppm.

Abstract: A method of manufacturing a passivation film, which includes a passivation process in which a substrate on the surface of which at least one of germanium and molybdenum is contained is treated with a passivation gas containing an oxygen-containing compound, which is a compound containing an oxygen atom in the molecule, and hydrogen sulfide to form a passivation film containing a sulfur atom on the surface of the substrate. The concentration of the oxygen-containing compound in the passivation gas is from 0.001 mole ppm to less than 75 mole ppm.

Abstract: Provided are a deposit removal method and a film deposition method capable of removing a selenium-containing deposit adhering to an inner surface of a chamber or an inner surface of piping connected to the chamber without disassembling the chamber. A selenium-containing deposit adhering to at least one of the inner surface of a chamber (10) or the inner surface of exhaust piping (15) connected to the chamber (10) is removed by reacting with a cleaning gas containing a fluorine-containing compound gas.

Abstract: Provided are a deposit removal method and a film deposition method capable of removing a selenium-containing deposit adhering to an inner surface of a chamber or an inner surface of piping connected to the chamber without disassembling the chamber. A selenium-containing deposit adhering to at least one of the inner surface of a chamber (10) or the inner surface of exhaust piping (15) connected to the chamber (10) is removed by reacting with a cleaning gas containing a hydrogen-containing compound gas.

Abstract: To provide a hydrogen sulfide mixture hardly corroding metals. The hydrogen sulfide mixture contains hydrogen sulfide and water. The hydrogen sulfide mixture is filled into a filling container so that at least one part of the hydrogen sulfide mixture is liquid and the moisture concentration of a gaseous phase is 0.001 mol ppm or more and less than 75 mol ppm.

Abstract: Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing an oxygen-containing compound gas.

Abstract: Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing a hydrogen-containing compound gas.

Abstract: Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing a fluorine-containing compound gas.

Abstract: An etching method which includes treating a workpiece having a stacked film (5) of a silicon oxide layer (2) and a silicon nitride layer (3) with an etching gas containing an unsaturated halon represented by the chemical formula: C2HxF(3?x)Br (in the chemical formula, x stands for 0, 1, or 2) so as to control the respective etch rates of the silicon nitride layer and the silicon oxide layer to the same level and form a high-aspect-ratio hole having a desirable profile at a high etch rate. Also disclosed is a method of manufacturing a semiconductor which includes by carrying out the etching method.

Abstract: An etching method which includes treating a workpiece having a stacked film (5) of a silicon oxide layer (2) and a silicon nitride layer (3) with an etching gas containing an unsaturated halon represented by the chemical formula: C2HxF(3-x)Br (in the chemical formula, x stands for 0, 1, or 2) so as to control the respective etch rates of the silicon nitride layer and the silicon oxide layer to the same level and form a high-aspect-ratio hole having a desirable profile at a high etch rate. Also disclosed is a method of manufacturing a semiconductor which includes by carrying out the etching method.

Abstract: A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C.

Abstract: A method for producing a hydrogen chloride mixture containing hydrogen chloride and water, the method including: a first dehydration step of cooling a hydrogen chloride mixture in which a concentration of water is 1 mol ppm or more, to condense and separate water in the hydrogen chloride mixture; a second dehydration step of bringing a hydrogen chloride mixture obtained in the first dehydration step into contact with a water adsorbent to allow a concentration of water to be less than 0.5 mol ppm; and a filling step of filling a filling container with a hydrogen chloride mixture obtained in the second dehydration step so that at least a part of the hydrogen chloride mixture is liquid, and a concentration of water in a liquid phase at a time of completion of the filling is 0.01 mol ppm or more and less than 1 mol ppm.

Abstract: Provided is a method for producing a hydrogen chloride that is capable of efficiently producing a hydrogen chloride with a simple facility. The hydrogen chloride is produced by a method including causing an inert gas to be in gas-liquid contact with a hydrochloric acid in which a concentration is 20 mass % to 50 mass %, distilling the hydrochloric acid with which the inert gas is in gas-liquid contact in the gas-liquid contact and separating a hydrogen chloride from the hydrochloric acid to obtain a crude hydrogen chloride, dehydrating the crude hydrogen chloride obtained in the separating, and compressing and liquefying the dehydrated crude hydrogen chloride obtained in the dehydrating, and purifying the liquid crude hydrogen chloride by distillation.

Abstract: To provide a hydrogen sulfide mixture hardly corroding metals. The hydrogen sulfide mixture contains hydrogen sulfide and water. The hydrogen sulfide mixture is filled into a filling container so that at least one part of the hydrogen sulfide mixture is liquid and the moisture concentration of a gaseous phase is 0.001 mol ppm or more and less than 75 mol ppm.

Abstract: A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C.

Abstract: There is provided a hydrogen chloride mixture hardly corroding a metal. The hydrogen chloride mixture contains hydrogen chloride and water. The hydrogen chloride mixture is filled into a filling container so that a part of the hydrogen chloride mixture is liquid. The concentration of water in a gas phase in the hydrogen chloride mixture is 0.001 mol ppm or more and less than 4.5 mol ppm.

Abstract: Provided is a method for producing a hydrogen chloride that is capable of efficiently producing a hydrogen chloride with a simple facility. The hydrogen chloride is produced by a method including obtaining chlorine and hydrogen by electrolyzing an inorganic chloride aqueous solution of which a pH is 3 to 5, obtaining a crude hydrogen chloride by reacting the chlorine and the hydrogen obtained in the electrolyzing at 1000° C. to 1500° C. with a use of an excess quantity of the hydrogen with respect to the chlorine in a molar ratio, dehydrating the crude hydrogen chloride obtained in the reacting, and compressing and liquefying the dehydrated crude hydrogen chloride obtained in the dehydrating, and purifying the liquid crude hydrogen chloride by distillation.

Abstract: Provided is a method for producing a hydrogen chloride that is capable of efficiently producing a hydrogen chloride with a simple facility. The hydrogen chloride is produced by a method including causing an inert gas to be in gas-liquid contact with a hydrochloric acid in which a concentration is 20 mass % to 50 mass %, distilling the hydrochloric acid with which the inert gas is in gas-liquid contact in the gas-liquid contact and separating a hydrogen chloride from the hydrochloric acid to obtain a crude hydrogen chloride, dehydrating the crude hydrogen chloride obtained in the separating, and compressing and liquefying the dehydrated crude hydrogen chloride obtained in the dehydrating, and purifying the liquid crude hydrogen chloride by distillation.