Patents by Inventor Yosuke TANIMOTO

Yosuke TANIMOTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220250908
    Abstract: Provided is a sulfur dioxide mixture that hardly corrodes metals. A sulfur dioxide mixture contains sulfur dioxide and water. The sulfur dioxide mixture is filled in a filling container in such a manner that a gas phase and a liquid phase exist, and the moisture concentration of the gas phase is from 0.005 mole ppm to less than 5,000 mole ppm.
    Type: Application
    Filed: February 17, 2021
    Publication date: August 11, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Hideyuki KURIHARA
  • Publication number: 20220246447
    Abstract: A method of manufacturing a passivation film, which includes a passivation process in which a substrate on the surface of which at least one of germanium and molybdenum is contained is treated with a passivation gas containing an oxygen-containing compound, which is a compound containing an oxygen atom in the molecule, and hydrogen sulfide to form a passivation film containing a sulfur atom on the surface of the substrate. The concentration of the oxygen-containing compound in the passivation gas is from 0.001 mole ppm to less than 75 mole ppm.
    Type: Application
    Filed: November 24, 2020
    Publication date: August 4, 2022
    Applicant: SHOWA DENKO K.K.
    Inventor: Yosuke TANIMOTO
  • Publication number: 20220220612
    Abstract: Provided are a deposit removal method and a film deposition method capable of removing a selenium-containing deposit adhering to an inner surface of a chamber or an inner surface of piping connected to the chamber without disassembling the chamber. A selenium-containing deposit adhering to at least one of the inner surface of a chamber (10) or the inner surface of exhaust piping (15) connected to the chamber (10) is removed by reacting with a cleaning gas containing a fluorine-containing compound gas.
    Type: Application
    Filed: November 4, 2020
    Publication date: July 14, 2022
    Applicant: SHOWA DENKO K.K.
    Inventor: Yosuke TANIMOTO
  • Publication number: 20220157599
    Abstract: Provided are a deposit removal method and a film deposition method capable of removing a selenium-containing deposit adhering to an inner surface of a chamber or an inner surface of piping connected to the chamber without disassembling the chamber. A selenium-containing deposit adhering to at least one of the inner surface of a chamber (10) or the inner surface of exhaust piping (15) connected to the chamber (10) is removed by reacting with a cleaning gas containing a hydrogen-containing compound gas.
    Type: Application
    Filed: November 4, 2020
    Publication date: May 19, 2022
    Applicant: SHOWA DENKO K.K.
    Inventor: Yosuke TANIMOTO
  • Patent number: 11312625
    Abstract: To provide a hydrogen sulfide mixture hardly corroding metals. The hydrogen sulfide mixture contains hydrogen sulfide and water. The hydrogen sulfide mixture is filled into a filling container so that at least one part of the hydrogen sulfide mixture is liquid and the moisture concentration of a gaseous phase is 0.001 mol ppm or more and less than 75 mol ppm.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: April 26, 2022
    Assignee: SHOWA DENKO K.K
    Inventors: Yosuke Tanimoto, Yasuyuki Hoshino
  • Publication number: 20220064788
    Abstract: Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing an oxygen-containing compound gas.
    Type: Application
    Filed: December 10, 2019
    Publication date: March 3, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Shimon OSADA
  • Publication number: 20220064777
    Abstract: Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing a hydrogen-containing compound gas.
    Type: Application
    Filed: December 3, 2019
    Publication date: March 3, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Shimon OSADA
  • Publication number: 20220059327
    Abstract: Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing a fluorine-containing compound gas.
    Type: Application
    Filed: December 10, 2019
    Publication date: February 24, 2022
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Shimon OSADA
  • Patent number: 11114305
    Abstract: An etching method which includes treating a workpiece having a stacked film (5) of a silicon oxide layer (2) and a silicon nitride layer (3) with an etching gas containing an unsaturated halon represented by the chemical formula: C2HxF(3?x)Br (in the chemical formula, x stands for 0, 1, or 2) so as to control the respective etch rates of the silicon nitride layer and the silicon oxide layer to the same level and form a high-aspect-ratio hole having a desirable profile at a high etch rate. Also disclosed is a method of manufacturing a semiconductor which includes by carrying out the etching method.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: September 7, 2021
    Assignee: SHOWA DENKO K.K.
    Inventor: Yosuke Tanimoto
  • Publication number: 20210217627
    Abstract: An etching method which includes treating a workpiece having a stacked film (5) of a silicon oxide layer (2) and a silicon nitride layer (3) with an etching gas containing an unsaturated halon represented by the chemical formula: C2HxF(3-x)Br (in the chemical formula, x stands for 0, 1, or 2) so as to control the respective etch rates of the silicon nitride layer and the silicon oxide layer to the same level and form a high-aspect-ratio hole having a desirable profile at a high etch rate. Also disclosed is a method of manufacturing a semiconductor which includes by carrying out the etching method.
    Type: Application
    Filed: October 22, 2018
    Publication date: July 15, 2021
    Applicant: SHOWA DENKO K.K.
    Inventor: Yosuke TANIMOTO
  • Patent number: 11028474
    Abstract: A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C.
    Type: Grant
    Filed: December 26, 2016
    Date of Patent: June 8, 2021
    Assignee: SHOWA DENKO K.K.
    Inventors: Yosuke Tanimoto, Hideyuki Kurihara
  • Publication number: 20200354217
    Abstract: A method for producing a hydrogen chloride mixture containing hydrogen chloride and water, the method including: a first dehydration step of cooling a hydrogen chloride mixture in which a concentration of water is 1 mol ppm or more, to condense and separate water in the hydrogen chloride mixture; a second dehydration step of bringing a hydrogen chloride mixture obtained in the first dehydration step into contact with a water adsorbent to allow a concentration of water to be less than 0.5 mol ppm; and a filling step of filling a filling container with a hydrogen chloride mixture obtained in the second dehydration step so that at least a part of the hydrogen chloride mixture is liquid, and a concentration of water in a liquid phase at a time of completion of the filling is 0.01 mol ppm or more and less than 1 mol ppm.
    Type: Application
    Filed: June 4, 2020
    Publication date: November 12, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Yasuyuki Hoshino
  • Patent number: 10611636
    Abstract: Provided is a method for producing a hydrogen chloride that is capable of efficiently producing a hydrogen chloride with a simple facility. The hydrogen chloride is produced by a method including causing an inert gas to be in gas-liquid contact with a hydrochloric acid in which a concentration is 20 mass % to 50 mass %, distilling the hydrochloric acid with which the inert gas is in gas-liquid contact in the gas-liquid contact and separating a hydrogen chloride from the hydrochloric acid to obtain a crude hydrogen chloride, dehydrating the crude hydrogen chloride obtained in the separating, and compressing and liquefying the dehydrated crude hydrogen chloride obtained in the dehydrating, and purifying the liquid crude hydrogen chloride by distillation.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: April 7, 2020
    Assignee: SHOWA DENKO K.K.
    Inventor: Yosuke Tanimoto
  • Publication number: 20190185323
    Abstract: To provide a hydrogen sulfide mixture hardly corroding metals. The hydrogen sulfide mixture contains hydrogen sulfide and water. The hydrogen sulfide mixture is filled into a filling container so that at least one part of the hydrogen sulfide mixture is liquid and the moisture concentration of a gaseous phase is 0.001 mol ppm or more and less than 75 mol ppm.
    Type: Application
    Filed: May 17, 2017
    Publication date: June 20, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Yasuyuki HOSHINO
  • Publication number: 20190003046
    Abstract: A method of cleaning a SiC monocrystal growth furnace provided with an in-furnace substrate composed of a 3C-SiC polycrystal having at least a surface in which an intensity ratio of a (111) plane with respect to other crystal planes is at least 85% but not more than 100% according to powder XRD analysis, the method including flowing a mixed gas of fluorine gas and at least one of an inert gas and air in a non-plasma state through the inside of the SiC monocrystal growth furnace, thereby selectively removing a SiC deposit deposited inside the SiC monocrystal growth furnace, wherein the mixed gas comprises at least 1 vol % but not more than 20 vol % of fluorine gas, and at least 80 vol % but not more than 99 vol % of an inert gas, and a temperature inside the SiC monocrystal growth furnace is from 200° C. to 500° C.
    Type: Application
    Filed: December 26, 2016
    Publication date: January 3, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Hideyuki KURIHARA
  • Publication number: 20180354789
    Abstract: Provided is a method for producing a hydrogen chloride that is capable of efficiently producing a hydrogen chloride with a simple facility. The hydrogen chloride is produced by a method including obtaining chlorine and hydrogen by electrolyzing an inorganic chloride aqueous solution of which a pH is 3 to 5, obtaining a crude hydrogen chloride by reacting the chlorine and the hydrogen obtained in the electrolyzing at 1000° C. to 1500° C. with a use of an excess quantity of the hydrogen with respect to the chlorine in a molar ratio, dehydrating the crude hydrogen chloride obtained in the reacting, and compressing and liquefying the dehydrated crude hydrogen chloride obtained in the dehydrating, and purifying the liquid crude hydrogen chloride by distillation.
    Type: Application
    Filed: July 25, 2016
    Publication date: December 13, 2018
    Applicant: SHOWA DENKO K.K.
    Inventor: Yosuke TANIMOTO
  • Publication number: 20180354790
    Abstract: There is provided a hydrogen chloride mixture hardly corroding a metal. The hydrogen chloride mixture contains hydrogen chloride and water. The hydrogen chloride mixture is filled into a filling container so that a part of the hydrogen chloride mixture is liquid. The concentration of water in a gas phase in the hydrogen chloride mixture is 0.001 mol ppm or more and less than 4.5 mol ppm.
    Type: Application
    Filed: December 1, 2016
    Publication date: December 13, 2018
    Applicant: SHOWA DENKO K.K.
    Inventors: Yosuke TANIMOTO, Yasuyuki HOSHINO
  • Publication number: 20180208465
    Abstract: Provided is a method for producing a hydrogen chloride that is capable of efficiently producing a hydrogen chloride with a simple facility. The hydrogen chloride is produced by a method including causing an inert gas to be in gas-liquid contact with a hydrochloric acid in which a concentration is 20 mass % to 50 mass %, distilling the hydrochloric acid with which the inert gas is in gas-liquid contact in the gas-liquid contact and separating a hydrogen chloride from the hydrochloric acid to obtain a crude hydrogen chloride, dehydrating the crude hydrogen chloride obtained in the separating, and compressing and liquefying the dehydrated crude hydrogen chloride obtained in the dehydrating, and purifying the liquid crude hydrogen chloride by distillation.
    Type: Application
    Filed: July 25, 2016
    Publication date: July 26, 2018
    Applicant: SHOWA DENKO K.K.
    Inventor: Yosuke TANIMOTO