Patents by Inventor Yosuke Tsukamoto

Yosuke Tsukamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11113995
    Abstract: An electronic device including a large display region and with improved portability is provided. An electronic device with improved reliability is provided. An information processing device includes a first film, a panel substrate, and at least a first housing. The panel substrate has flexibility and a display region, and the first film has a visible-light-transmitting property and flexibility. The first housing includes a first slit, the panel substrate includes a region positioned between the first film and a second film, the first slit has a function of storing the region, and one or both of the panel substrate and the first film can slide along the first slit.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: September 7, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshiyuki Isa, Akio Endo, Yosuke Tsukamoto, Jun Koyama
  • Publication number: 20210217805
    Abstract: A display device with high resolution is provided. Manufacturing cost of a display device using a micro LED as a display element is reduced. The display device includes a substrate, a plurality of transistors, and a plurality of light-emitting diodes. The plurality of light-emitting diodes are provided in a matrix over the substrate. Each of the plurality of transistors are electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes are positioned closer to the substrate than the plurality of transistors are. The plurality of light-emitting diodes emit light to the opposite side of the substrate.
    Type: Application
    Filed: April 26, 2019
    Publication date: July 15, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Koji KUSUNOKI, Shingo EGUCHI, Yosuke TSUKAMOTO, Kazunori WATANABE, Kouhei TOYOTAKA
  • Publication number: 20210118855
    Abstract: A display device with a high luminance, a high contrast, and low power consumption is provided. The display device includes a transistor, a light-emitting element, a coloring layer, a phosphor layer, a first electrode, and a second electrode. The light-emitting element is electrically connected to the first electrode and the second electrode, the first electrode is electrically connected to the transistor, and the second electrode is positioned on the same plane as the first electrode. The coloring layer is positioned over the light-emitting element, the phosphor layer is positioned between the light-emitting element and the coloring layer, and the phosphor layer, the light-emitting element, and the coloring layer include a region in which they overlap with one another. The light-emitting element includes a light-emitting diode chip, and the phosphor layer has a function of emitting light of a complementary color of an emission color of the light-emitting element.
    Type: Application
    Filed: May 8, 2019
    Publication date: April 22, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Koji KUSUNOKI, Yosuke TSUKAMOTO, Kensuke YOSHIZUMI
  • Publication number: 20210050500
    Abstract: A novel display panel that is highly convenient or reliable is provided. A novel display device that is highly convenient or reliable is provided. A novel input/output device that is highly convenient or reliable is provided. A novel data processing device that is highly convenient or reliable is provided. The display panel includes a pixel, a functional layer, and a heat radiation member, the pixel includes a display element and a pixel circuit, and the pixel circuit is electrically connected to the display element. The functional layer includes the pixel circuit, a terminal, and an intermediate film, and the terminal is connected to the display element. The intermediate film includes an opening, and the heat radiation member is connected to the terminal through the opening.
    Type: Application
    Filed: April 29, 2019
    Publication date: February 18, 2021
    Inventors: Koji KUSUNOKI, Yosuke TSUKAMOTO, Kenichi OKAZAKI
  • Publication number: 20200043381
    Abstract: A plurality of display panels having a curved surface are placed in a limited space. Two, or three or more display panels are combined to form one display region having a T-shaped outer edge as one screen, and a driver can curve part of the display panel as appropriate so that the driver can see the screen easily. A first display panel or a second display panel has flexibility and includes a position adjustment function of curving an end portion. That is, by curving part of the display panel, the user can see the display panel easily. The in-car design can also be varied.
    Type: Application
    Filed: February 22, 2018
    Publication date: February 6, 2020
    Inventors: Yosuke TSUKAMOTO, Daiki NAKAMURA, Daisuke FURUMATSU, Kazuhiko FUJITA, Kyoichi MUKAO, Junya MARUYAMA
  • Publication number: 20200043382
    Abstract: An electronic device including a large display region and with improved portability is provided. An electronic device with improved reliability is provided. An information processing device includes a first film, a panel substrate, and at least a first housing. The panel substrate has flexibility and a display region, and the first film has a visible-light-transmitting property and flexibility. The first housing includes a first slit, the panel substrate includes a region positioned between the first film and a second film, the first slit has a function of storing the region, and one or both of the panel substrate and the first film can slide along the first slit.
    Type: Application
    Filed: October 18, 2017
    Publication date: February 6, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toshiyuki ISA, Akio ENDO, Yosuke TSUKAMOTO, Jun KOYAMA
  • Publication number: 20200004357
    Abstract: An electronic device capable of efficiently recognizing a handwritten character is provided. The electronic device includes a first circuit, a display portion, and a touch sensor. The first circuit includes a neural network. The display portion includes a flexible display. The touch sensor has the function of outputting an input handwritten character as image information to the first circuit. The first circuit has the function of analyzing the image information and converting the image information into character information, and a function of displaying an image including the character information on the display portion. The analysis is performed by inference through the use of the neural network.
    Type: Application
    Filed: February 26, 2018
    Publication date: January 2, 2020
    Inventors: Shintaro HARADA, Yoshiyuki KUROKAWA, Takeshi AOKI, Yuki OKAMOTO, Hiroki INOUE, Koji KUSUNOKI, Yosuke TSUKAMOTO, Katsuki YANAGAWA, Kei TAKAHASHI, Shunpei YAMAZAKI
  • Patent number: 10254796
    Abstract: An electronic device with a large display region and improved portability is provided. An electronic device with improved reliability is provided. The information processing device includes a first film, a second film, a panel substrate, and at least a first housing. The panel substrate has flexibility and includes a display region. The first film has visible light transmittance and flexibility, and the second film has flexibility. The first housing includes a first slit, the panel substrate includes a region interposed between the first film and the second film, the first slit is configured to store the region, and one or more of the panel substrate, the first film, and the second film can slide along the first slit.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: April 9, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshiyuki Isa, Akio Endo, Yosuke Tsukamoto, Jun Koyama
  • Patent number: 10033355
    Abstract: A voltage adjustment circuit includes switches connected in parallel between a circuit unit and an electric power supply line to which a first electric power supply voltage is applied, and changes the number of switches turned off, based on a comparison result between a target value and a second electric power supply voltage supplied to the circuit unit, to adjust the second electric power supply voltage. A control circuit decides an interval for increasing the number of switches turned off when the circuit unit changes to standby state, based on a leak current value of the circuit unit in standby state, a time in which the second electric power supply voltage changes from a first to a second value, the first and second values, and an electric potential difference by which the second electric power supply voltage changes when one switch switches between on and off.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: July 24, 2018
    Assignee: SOCIONEXT INC.
    Inventor: Yosuke Tsukamoto
  • Patent number: 9857844
    Abstract: A foldable light-emitting device is provided. Furthermore, a light-emitting device which can be developed is provided. The light-emitting device includes a light-emitting panel having flexibility, two support panels which support the light-emitting panel, and arms which are connected to the respective panels to be rotatable. Furthermore, the light-emitting device has a structure in which the two support panels, which are apart from each other and connected to the two arms that are connected to be rotatable, support the light-emitting panel. Accordingly, the light-emitting device can be folded so that the two support panels are apart from each other.
    Type: Grant
    Filed: July 15, 2014
    Date of Patent: January 2, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yosuke Tsukamoto
  • Publication number: 20170315589
    Abstract: An electronic device with a large display region and improved portability is provided. An electronic device with improved reliability is provided. The information processing device includes a first film, a second film, a panel substrate, and at least a first housing. The panel substrate has flexibility and includes a display region. The first film has visible light transmittance and flexibility, and the second film has flexibility. The first housing includes a first slit, the panel substrate includes a region interposed between the first film and the second film, the first slit is configured to store the region, and one or more of the panel substrate, the first film, and the second film can slide along the first slit.
    Type: Application
    Filed: April 26, 2017
    Publication date: November 2, 2017
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshiyuki ISA, Akio ENDO, Yosuke TSUKAMOTO, Jun KOYAMA
  • Publication number: 20170134010
    Abstract: A voltage adjustment circuit includes switches connected in parallel between a circuit unit and an electric power supply line to which a first electric power supply voltage is applied, and changes the number of switches turned off, based on a comparison result between a target value and a second electric power supply voltage supplied to the circuit unit, to adjust the second electric power supply voltage. A control circuit decides an interval for increasing the number of switches turned off when the circuit unit changes to standby state, based on a leak current value of the circuit unit in standby state, a time in which the second electric power supply voltage changes from a first to a second value, the first and second values, and an electric potential difference by which the second electric power supply voltage changes when one switch switches between on and off.
    Type: Application
    Filed: July 11, 2016
    Publication date: May 11, 2017
    Inventor: Yosuke TSUKAMOTO
  • Patent number: 8963161
    Abstract: In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.
    Type: Grant
    Filed: September 13, 2013
    Date of Patent: February 24, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Murakami, Yosuke Tsukamoto, Tomoaki Atsumi, Masayuki Sakakura
  • Publication number: 20150023030
    Abstract: A foldable light-emitting device is provided. Furthermore, a light-emitting device which can be developed is provided. The light-emitting device includes a light-emitting panel having flexibility, two support panels which support the light-emitting panel, and arms which are connected to the respective panels to be rotatable. Furthermore, the light-emitting device has a structure in which the two support panels, which are apart from each other and connected to the two arms that are connected to be rotatable, support the light-emitting panel. Accordingly, the light-emitting device can be folded so that the two support panels are apart from each other.
    Type: Application
    Filed: July 15, 2014
    Publication date: January 22, 2015
    Inventor: Yosuke TSUKAMOTO
  • Publication number: 20140014964
    Abstract: In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.
    Type: Application
    Filed: September 13, 2013
    Publication date: January 16, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Murakami, Yosuke Tsukamoto, Tomoaki Atsumi, Masayuki Sakakura
  • Patent number: 8536581
    Abstract: In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: September 17, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Murakami, Yosuke Tsukamoto, Tomoaki Atsumi, Masayuki Sakakura
  • Publication number: 20120235153
    Abstract: In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.
    Type: Application
    Filed: March 22, 2012
    Publication date: September 20, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi Murakami, Yosuke Tsukamoto, Tomoaki Atsumi, Masayuki Sakakura
  • Patent number: 8143627
    Abstract: In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: March 27, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Murakami, Yosuke Tsukamoto, Tomoaki Atsumi, Masayuki Sakakura
  • Publication number: 20100258811
    Abstract: In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT.
    Type: Application
    Filed: June 24, 2010
    Publication date: October 14, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi Murakami, Yosuke Tsukamoto, Tomoaki Atsumi, Masayuki Sakakura
  • Patent number: 7791079
    Abstract: In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT.
    Type: Grant
    Filed: December 17, 2007
    Date of Patent: September 7, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Murakami, Yosuke Tsukamoto, Tomoaki Atsumi, Masayuki Sakakura