Patents by Inventor You Che CHUANG

You Che CHUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE HAVING A BUTTED CONTACT AND METHOD OF FORMING
    Publication number: 20230225099
    Abstract: A semiconductor structure includes a first transistor comprising a first gate structure over a first active region in a substrate. The semiconductor structure further includes a second active region in the substrate. The semiconductor structure further includes a first butted contact. The first butted contact includes a first portion extending in a first direction and overlapping the second active region, and a second portion extending from the first portion, wherein the second portion directly contacts each of a top surface and a sidewall of the first gate structure.
    Type: Application
    Filed: March 15, 2023
    Publication date: July 13, 2023
    Inventors: You Che CHUANG, Chih-Ming LEE, Hsin-Chi CHEN, Hsun-Ying HUANG
  • Semiconductor device having a butted contact, method of forming and method of using
    Patent number: 11610901
    Abstract: A semiconductor structure includes a first transistor comprising a first gate structure over a first active region in a substrate. The semiconductor structure further includes a second active region in the substrate. The semiconductor structure further includes a first butted contact. The butted contact includes a first portion extending in a first direction and overlapping the second active region, and a second portion extending from the first portion in a second direction, different from the first direction, wherein the second portion directly contacts the first gate structure.
    Type: Grant
    Filed: December 3, 2020
    Date of Patent: March 21, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: You Che Chuang, Chih-Ming Lee, Hsin-Chi Chen, Hsun-Ying Huang
  • SEMICONDUCTOR DEVICE HAVING A BUTTED CONTACT, METHOD OF FORMING AND METHOD OF USING
    Publication number: 20210091091
    Abstract: A semiconductor structure includes a first transistor comprising a first gate structure over a first active region in a substrate. The semiconductor structure further includes a second active region in the substrate. The semiconductor structure further includes a first butted contact. The butted contact includes a first portion extending in a first direction and overlapping the second active region, and a second portion extending from the first portion in a second direction, different from the first direction, wherein the second portion directly contacts the first gate structure.
    Type: Application
    Filed: December 3, 2020
    Publication date: March 25, 2021
    Inventors: You Che CHUANG, Chih-Ming LEE, Hsin-Chi CHEN, Hsun-Ying HUANG
  • Memory cells with butted contacts and method of forming same
    Patent number: 10861859
    Abstract: A semiconductor structure includes a first transistor including a first gate structure over a first active region in a substrate, a second transistor including a second gate structure over a second active region in the substrate, and a butted contact electrically connecting the second active region of the second transistor to the first gate structure of the first transistor. The butted contact includes a first portion extending along a first direction and overlapping at least the second active region, and a second portion extending along a second direction different from the first direction and intersecting the first portion. The second portion extends over the first gate structure.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: You Che Chuang, Chih-Ming Lee, Hsin-Chi Chen, Hsun-Ying Huang
  • MEMORY CELLS WITH BUTTED CONTACTS AND METHOD OF FORMING SAME
    Publication number: 20200006355
    Abstract: A semiconductor structure includes a first transistor including a first gate structure over a first active region in a substrate, a second transistor including a second gate structure over a second active region in the substrate, and a butted contact electrically connecting the second active region of the second transistor to the first gate structure of the first transistor. The butted contact includes a first portion extending along a first direction and overlapping at least the second active region, and a second portion extending along a second direction different from the first direction and intersecting the first portion. The second portion extends over the first gate structure.
    Type: Application
    Filed: April 26, 2019
    Publication date: January 2, 2020
    Inventors: You Che CHUANG, Chih-Ming LEE, Hsin-Chi CHEN, Hsun-Ying HUANG