Patents by Inventor You-Da Lin
You-Da Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11749969Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: June 17, 2022Date of Patent: September 5, 2023Assignee: KYOCERA SLD Laser, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 11387630Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: December 1, 2020Date of Patent: July 12, 2022Assignee: KYOCERA SLD Laser, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 10879674Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: December 30, 2019Date of Patent: December 29, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 10522976Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: August 30, 2018Date of Patent: December 31, 2019Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 10069282Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: February 3, 2017Date of Patent: September 4, 2018Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 9966366Abstract: A lighting device includes a plurality of light-emitting diodes including a first light-emitting diode with a non-rectangular shape in a top view, a submount to which each of the plurality of light-emitting diodes is coupled, and a plurality of conductive elements formed between the submount and the plurality of light-emitting diodes to electrically connecting at least a portion of the plurality of light-emitting diodes with each other in series.Type: GrantFiled: August 29, 2016Date of Patent: May 8, 2018Assignee: EPISTAR CORPORATIONInventors: Kuan-Chun Chen, Hao-Chung Kuo, You-Da Lin, Zhen-Yu Li
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Patent number: 9590392Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: October 14, 2015Date of Patent: March 7, 2017Assignee: SORAA LASER DIODE, INC.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Publication number: 20160365337Abstract: A lighting device includes a plurality of light-emitting diodes including a first light-emitting diode with a non-rectangular shape in a top view, a submount to which each of the plurality of light-emitting diodes is coupled, and a plurality of conductive elements formed between the submount and the plurality of light-emitting diodes to electrically connecting at least a portion of the plurality of light-emitting diodes with each other in series.Type: ApplicationFiled: August 29, 2016Publication date: December 15, 2016Inventors: Kuan-Chun CHEN, Hao-Chung KUO, You-Da LIN, Zhen-Yu LI
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Patent number: 9431576Abstract: A lighting device includes a plurality of light-emitting diodes including a first light-emitting diode with a non-rectangular shape in a top view, a submount to which each of the plurality of light-emitting diodes is coupled, and a plurality of conductive elements formed between the submount and the plurality of light-emitting diodes to electrically connecting at least a portion of the plurality of light-emitting diodes with each other in series.Type: GrantFiled: July 6, 2015Date of Patent: August 30, 2016Assignee: EPISTAR CORPORATIONInventors: Kuan-Chun Chen, Hao-Chung Kuo, You-Da Lin, Zhen-Yu Li
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Publication number: 20150311391Abstract: A lighting device includes a plurality of light-emitting diodes including a first light-emitting diode with a non-rectangular shape in a top view, a submount to which each of the plurality of light-emitting diodes is coupled, and a plurality of conductive elements formed between the submount and the plurality of light-emitting diodes to electrically connecting at least a portion of the plurality of light-emitting diodes with each other in series.Type: ApplicationFiled: July 6, 2015Publication date: October 29, 2015Inventors: Kuan-Chun CHEN, Hao-Chung KUO, You-Da LIN, Zhen-Yu LI
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Patent number: 9166374Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: January 23, 2015Date of Patent: October 20, 2015Assignee: SORAA LASER DIODE, INC.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 9093820Abstract: An optical device includes a gallium and nitrogen containing substrate having a surface region and an optical blocking region of InAlN material overlying the surface region. A strain control region maintain quantum wells within a predetermined strain state. The strained region is preferably a confined heterostructure.Type: GrantFiled: January 24, 2012Date of Patent: July 28, 2015Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Poblenz
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Patent number: 9076950Abstract: A lighting apparatus includes a polygon die including a plurality of light-emitting diodes (LEDs), and a submount to which each of the LEDs is coupled. Each LED includes a plurality of epi-layers which contains a p-type layer, an n-type layer, and a multiple quantum well (MQW) disposed between the p-type layer and the n-type layer, and a p-type electrode and an n-type electrode which are electrically coupled to the p-type layer and the n-type layer, respectively. The p-type and the n-type electrodes are located between the submount and the epi-layers. The submount contains a plurality of conductive elements configured to electrically couple at least a portion of the plurality of LEDs in series. At least some of the plurality of LEDs have non-rectangular top view shapes.Type: GrantFiled: March 8, 2013Date of Patent: July 7, 2015Assignee: TSMC SOLID STATE LIGHTING LTD.Inventors: Kuan-Chun Chen, Hao-Chung Kuo, You-Da Lin, Zhen-Yu Li
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Patent number: 8971370Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: October 12, 2012Date of Patent: March 3, 2015Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Publication number: 20150055671Abstract: The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.Type: ApplicationFiled: November 5, 2014Publication date: February 26, 2015Inventors: Zhen-Yu Li, Tzu-Te Yang, Hon-Way Lin, Chung-Pao Lin, Kuan-Chun Chen, Ching-Yu Chen, You-Da Lin, Hao-Chung Kuo
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Patent number: 8761218Abstract: A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.Type: GrantFiled: April 5, 2011Date of Patent: June 24, 2014Assignee: The Regents of the University of CaliforniaInventors: You-Da Lin, Hiroaki Ohta, Shuji Nakamura, Steven P. DenBaars, James S. Speck
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Publication number: 20140077153Abstract: The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.Type: ApplicationFiled: September 14, 2012Publication date: March 20, 2014Applicant: TSMC Solid State Lighting Ltd.Inventors: Zhen-Yu Li, Tzu-Te Yang, Hon-Way Lin, Chung-Pao Lin, Kuan-Chun Chen, Ching-Yu Chen, You-Da Lin, Hao-Chung Kuo
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Publication number: 20140078757Abstract: The present disclosure involves a lighting apparatus. The lighting apparatus includes a polygon die. The polygon die includes a plurality of light-emitting diodes (LEDs). Each LED includes a plurality of epi-layers, the epi-layers containing a p-type layer, an n-type layer, and a multiple quantum well (MQW) disposed between the p-type layer and the n-type layer. Each LED includes a p-type electrode and an n-type electrode electrically coupled to the p-type layer and the n-type layer, respectively. The polygon die also includes a submount to which each of the LEDs is coupled. The p-type and the n-type electrodes are located between the submount and the epi-layers. The submount contains a plurality of conductive elements configured to electrically couple at least a portion of the plurality of LEDs in series.Type: ApplicationFiled: March 8, 2013Publication date: March 20, 2014Applicant: TSMC Solid State Lighting Ltd.Inventors: Kuan-Chun Chen, Hao-Chung Kuo, You-Da Lin, Zhen-Yu Li
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Publication number: 20120153297Abstract: Ohmic cathode electrodes are formed on the backside of nonpolar m-plane (1-100) and semipolar (20-21) bulk gallium nitride (GaN) substrates. The GaN substrates are thinned using a mechanical polishing process. For m-plane GaN, after the thinning process, dry etching is performed, followed by metal deposition, resulting in ohmic I-V characteristics for the contact. For (20-21) GaN, after the thinning process, dry etching is performed, followed by metal deposition, followed by annealing, resulting in ohmic I-V characteristics for the contact as well.Type: ApplicationFiled: August 1, 2011Publication date: June 21, 2012Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Chia-Lin Hsiung, You-Da Lin, Hiroaki Ohta, Steven P. DenBaars, Shuji Nakamura
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Publication number: 20120076165Abstract: A light emitting active region between a first cladding layer and a second cladding layer, wherein the first cladding layer has a lower refractive index than a refractive index of the second cladding layer, and the first cladding layer and the second cladding layer are III-nitride based.Type: ApplicationFiled: June 7, 2010Publication date: March 29, 2012Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Arpan Chakraborty, You-Da Lin, Shuji Nakamura, Steven P. Denbaars