Patents by Inventor You Fong Zheng

You Fong Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patterned, synthetic longitudinally exchange biased GMR sensor
    Patent number: 7400475
    Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
    Type: Grant
    Filed: January 14, 2005
    Date of Patent: July 15, 2008
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Min Li, Ru-Ying Tong, Yun-Fei Li, You Fong Zheng, Simon Liao, Kochan Ju, Cherng Chyi Han
  • Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor
    Patent number: 7152304
    Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
    Type: Grant
    Filed: January 14, 2005
    Date of Patent: December 26, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Min Li, Ru-Ying Tong, Yun-Fei Li, You Fong Zheng, Simon Liao, Kochan Ju, Cherng Chyi Han
  • Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor
    Patent number: 7134186
    Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
    Type: Grant
    Filed: January 14, 2005
    Date of Patent: November 14, 2006
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Min Li, Ru-Ying Tong, Yun-Fei Li, You Fong Zheng, Simon Liao, Kochan Ju, Cherng Chyi Han