Abstract: A semiconductor structure and a manufacturing method therefor. The semiconductor structure includes: a first substrate; a plurality of first conductive pads located on the first substrate; multiple second conductive pads, at least one of the first conductive pads and at least one of the second conductive pads being electrically connected through a first conductive interconnection structure extending in a direction perpendicular to the first substrate; and a filling layer filled in the outer periphery of each of the first conductive pads, the first conductive interconnection structure, and each of the second conductive pads, where the first conductive interconnection structure has a surface buried by a filling layer between adjacent second conductive pads. The semiconductor structure is at least conducive to improving electrical performance.

Abstract: A semiconductor structure and a manufacturing method therefor are disclosed. The semiconductor structure includes an interposer, where the interposer includes a deep trench capacitor array and an isolation structure. The deep trench capacitor array includes multiple deep trench capacitors, and the isolation structure at least partially surrounds a deep trench capacitor on the outmost edge side of the deep trench capacitor array.