Patents by Inventor You-Jong Kim

You-Jong Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240136187
    Abstract: One embodiment of the present invention provides a method of manufacturing an electronic device using a cyclic doping process including i) an operation of forming a unit transfer thin film including a two-dimensional material on a transfer substrate, ii) an operation of doping the unit transfer thin film in a low-damage doping process, iii) an operation of transferring the unit transfer thin film doped according to the operation ii) on a transfer target substrate, and iv) an operation of repeatedly performing the operations i) to iii) several times to reach a target thickness.
    Type: Application
    Filed: October 19, 2023
    Publication date: April 25, 2024
    Applicant: Research & Business Foundation SUNGKYUNKWAN UNIVERSITY
    Inventors: Geun Young YEOM, Ki Hyun KIM, Ji Eun KANG, Seong Jae YU, You Jin JI, Doo San KIM, Hyun Woo TAK, Yun Jong JANG, Hee Ju KIM, Ki Seok KIM
  • Patent number: 7579766
    Abstract: An electron emission device includes first and second substrates facing each other with a predetermined distance, cathode electrodes formed on the first substrate, electron emission regions formed on the cathode electrodes, and gate electrodes placed over the cathode electrodes while interposing an insulating layer. The gate electrodes have opening portions exposing the electron emission regions on the first substrate. The electron emission region has a height compensation portion formed on the cathode electrode such that the width of the height compensation portion is reduced in a direction toward the second substrate. An electron emission layer covers the surface of the height compensation portion and contacts the cathode electrode such that the electron emission layer is electrically connected to the cathode electrode.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: August 25, 2009
    Assignee: Samsung SDI, Co., Ltd.
    Inventor: You-Jong Kim
  • Patent number: 7511412
    Abstract: An electron emission device comprises first and second substrates facing each other and separated from each other by a distance. First and second electrodes are positioned on the first substrate such that the first and second electrodes are insulated from each other. Electron emission regions are positioned on the first substrate and are electrically connected to at least one of the first and second electrodes. An insulating layer covers the first and second electrodes. A focusing electrode is positioned on the insulating layer. The focusing electrode includes openings to allow passage of electron beams. The focusing electrode comprises a first layer having a first thickness, a second layer beneath the first layer and a third layer surrounding the first layer. The second and third layers are electrically connected and have second and third thicknesses smaller than the first thickness.
    Type: Grant
    Filed: April 28, 2005
    Date of Patent: March 31, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventor: You-Jong Kim
  • Publication number: 20080003916
    Abstract: Provided is a field emission device using carbon nanotubes. The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.
    Type: Application
    Filed: May 14, 2007
    Publication date: January 3, 2008
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Shang-hyeun Park, Hang-woo Lee, You-jong Kim, Pil-soo Ahn
  • Patent number: 7233102
    Abstract: The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.
    Type: Grant
    Filed: October 17, 2003
    Date of Patent: June 19, 2007
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Shang-hyeun Park, Hang-woo Lee, You-jong Kim, Pil-soo Ahn
  • Patent number: 7044822
    Abstract: A substrate, a cathode electrode formed on the substrate, a gate insulating layer which is formed on the cathode electrode and has a through hole corresponding to part of the cathode electrode, a gate electrode which has a gate hole corresponding to the through hole and is formed on the gate insulating layer, and an emitter formed on the gate electrode exposed to the bottom of the through hole. The emitter has a stack structure formed of a resistive material layer and an electron emission material layer containing a fine electron emission source formed on the resistive material layer.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: May 16, 2006
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jeong-Hee Lee, Hang-Woo Lee, Shang-Hyeun Park, You-Jong Kim
  • Publication number: 20060022577
    Abstract: An electron emission device includes first and second substrates facing each other, cathode electrodes formed on the first substrate, and electron emission regions formed on the cathode electrodes. Gate electrodes are formed on the cathode electrodes with a first insulating layer interposed between them. A focusing electrode is formed on the first insulating layer and the gate electrodes with a second insulating layer interposed between them. The first insulating layer, the gate electrodes, the second insulating layer and the focusing electrode each have openings exposing the electron emission regions on the first substrate. The size of the opening measured at a surface of the second insulating layer facing the first insulating layer is smaller than the size of the opening measured at a surface of the first insulating layer facing the second insulating layer.
    Type: Application
    Filed: July 27, 2005
    Publication date: February 2, 2006
    Inventor: You-Jong Kim
  • Publication number: 20060022569
    Abstract: An electron emission device includes first and second substrates facing each other with a predetermined distance, cathode electrodes formed on the first substrate, electron emission regions formed on the cathode electrodes, and gate electrodes placed over the cathode electrodes while interposing an insulating layer. The gate electrodes have opening portions exposing the electron emission regions on the first substrate. The electron emission region has a height compensation portion formed on the cathode electrode such that the width of the height compensation portion is reduced in a direction toward the second substrate. An electron emission layer covers the surface of the height compensation portion and contacts the cathode electrode such that the electron emission layer is electrically connected to the cathode electrode.
    Type: Application
    Filed: July 27, 2005
    Publication date: February 2, 2006
    Inventor: You-Jong Kim
  • Publication number: 20050242705
    Abstract: An electron emission device comprises first and second substrates facing each other and separated from each other by a distance. First and second electrodes are positioned on the first substrate such that the first and second electrodes are insulated from each other. Electron emission regions are positioned on the first substrate and are electrically connected to at least one of the first and second electrodes. An insulating layer covers the first and second electrodes. A focusing electrode is positioned on the insulating layer. The focusing electrode includes openings to allow passage of electron beams. The focusing electrode comprises a first layer having a first thickness, a second layer beneath the first layer and a third layer surrounding the first layer. The second and third layers are electrically connected and have second and third thicknesses smaller than the first thickness.
    Type: Application
    Filed: April 28, 2005
    Publication date: November 3, 2005
    Inventor: You-Jong Kim
  • Publication number: 20050242706
    Abstract: A cathode substrate for an electron emission device includes a substrate, electron emission regions formed on the substrate, and one or more driving electrodes controlling the electrons emitted from the electron emission regions. A first insulating layer contacts the driving electrodes. A focusing electrode is provided in the cathode substrate to focus the electrons emitted from the electron emission regions. A second insulating layer is located between the driving electrodes and the focusing electrode. The materials used in the first and the second insulating layers have different etch rates.
    Type: Application
    Filed: April 29, 2005
    Publication date: November 3, 2005
    Inventors: You-Jong Kim, Chun-Gyoo Lee, Sang-Jo Lee
  • Patent number: 6815238
    Abstract: A method of manufacturing a field emission device. In the method, emitters are formed using a lift-off process, and an isolation layer is formed between a sacrificial layer for patterning the emitters and emitter materials. The isolation layer prevents the sacrificial layer from reacting on the emitter materials to facilitate the lift-off process. Thus, the field emission device, which uniformly emits light having a high brightness, can be obtained.
    Type: Grant
    Filed: February 12, 2004
    Date of Patent: November 9, 2004
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Jeong-hee Lee, Hang-woo Lee, Shang-hyeun Park, You-jong Kim
  • Publication number: 20040161867
    Abstract: A method of manufacturing a field emission device. In the method, emitters are formed using a lift-off process, and an isolation layer is formed between a sacrificial layer for patterning the emitters and emitter materials. The isolation layer prevents the sacrificial layer from reacting on the emitter materials to facilitate the lift-off process. Thus, the field emission device, which uniformly emits light having a high brightness, can be obtained.
    Type: Application
    Filed: February 12, 2004
    Publication date: August 19, 2004
    Inventors: Jeong-hee Lee, Hang-woo Lee, Shang-hyeun Park, You-jong kim
  • Publication number: 20040124756
    Abstract: A field emission device is provided. The field emission device includes a substrate, a cathode electrode formed on the substrate, a gate insulating layer which is formed on the cathode electrode and has a through hole corresponding to part of the cathode electrode, a gate electrode which has a gate hole corresponding to the through hole and is formed on the gate insulating layer, and an emitter formed on the gate electrode exposed to the bottom of the through hole. The emitter has a stack structure formed of a resistive material layer and an electron emission material layer containing a fine electron emission source formed on the resistive material layer.
    Type: Application
    Filed: December 16, 2003
    Publication date: July 1, 2004
    Applicant: SAMSUNG SDI CO., LTD.
    Inventors: Jeong-Hee Lee, Hang-Woo Lee, Shang-Hyeun Park, You-Jong Kim
  • Publication number: 20040080260
    Abstract: Provided is a field emission device using carbon nanotubes. The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.
    Type: Application
    Filed: October 17, 2003
    Publication date: April 29, 2004
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Shang-hyeun Park, Hang-woo Lee, You-jong Kim, Pil-soo Ahn
  • Patent number: 6621232
    Abstract: A field emission display includes a first substrate; a plurality of gate electrodes formed on the first substrate in a predetermined pattern; an insulation layer formed covering the gate electrodes over an entire surface of the first substrate; a plurality of cathode electrodes formed on the insulation layer in a predetermined pattern, a plurality of emitters formed on the cathode electrodes; a plurality of counter electrodes formed on the insulation layer at a predetermined distance from the emitters and in a state of electrical connection to the gate electrodes, the counter electrodes forming an electric field directed toward the emitters; a second substrate provided at a predetermined distance from the first substrate and sealed in a vacuum state with the first substrate; an anode electrode formed on a surface of the second substrate opposing the first substrate; and a plurality of phosphor layers formed over the anode electrode in a predetermined pattern.
    Type: Grant
    Filed: May 28, 2002
    Date of Patent: September 16, 2003
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Sung-Ho Jo, You-Jong Kim, Sang-Jo Lee, Jae-Cheol Cha, Jong-Min Kim
  • Publication number: 20030127988
    Abstract: A field emission display includes a first substrate; a plurality of gate electrodes formed on the first substrate in a predetermined pattern; an insulation layer formed covering the gate electrodes over an entire surface of the first substrate; a plurality of cathode electrodes formed on the insulation layer in a predetermined pattern, a plurality of emitters formed on the cathode electrodes; a plurality of counter electrodes formed on the insulation layer at a predetermined distance from the emitters and in a state of electrical connection to the gate electrodes, the counter electrodes forming an electric field directed toward the emitters; a second substrate provided at a predetermined distance from the first substrate and sealed in a vacuum state with the first substrate; an anode electrode formed on a surface of the second substrate opposing the first substrate; and a plurality of phosphor layers formed over the anode electrode in a predetermined pattern.
    Type: Application
    Filed: May 28, 2002
    Publication date: July 10, 2003
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Sung-Ho Jo, You-Jong Kim, Sang-Jo Lee, Jae-Cheol Cha, Jong-Min Kim