Abstract: A sputtering apparatus includes: a first cylindrical target and a second cylindrical target, which are arranged in a first direction and parallel to each other; a first magnet disposed in the first cylindrical target; a second magnet disposed in the second cylindrical target; and a substrate holder spaced apart from the first and second cylindrical targets in a second direction which is perpendicular to the first direction, wherein each of a first angle formed by a first imaginary straight line from a center of the first magnet to a cylindrical axis of the first cylindrical target with a first perpendicular line and a second angle formed by a second imaginary straight line from a center to of the second magnet to a cylindrical axis of the second cylindrical target with a second perpendicular line is in a range of about 30 degrees to about 180 degrees.

Abstract: An in-line manufacturing apparatus includes a carrier that transports a substrate, a plurality of process chambers subjected to a manufacturing process on the substrate transported through the carrier, and a cooling part disposed adjacent to the carrier and movable with the carrier.

Abstract: A deposition apparatus includes: a susceptor provided with a plurality of susceptor holes defined therein; an electrostatic chuck disposed on the susceptor and provided with a plurality of electrostatic chuck holes defined therein; and a plurality of pins penetrating through the susceptor and the electrostatic chuck to connect the susceptor and the electrostatic chuck. Each of the pins includes a first portion disposed in a corresponding electrostatic chuck hole of the plurality of electrostatic chuck holes and a second portion disposed in a corresponding susceptor hole of the plurality of susceptor holes. The first portion includes a first base portion and a first cooler disposed in the first base portion.

Abstract: A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/m2 or more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.

Abstract: A thin film deposition apparatus includes a process chamber that includes a reaction space, a plasma generating unit, and a sputtering unit. The plasma generating unit generates a plasma in the reaction space. The sputtering unit is independently driven from the plasma generating unit to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma.