Patents by Inventor You Jung GILL

You Jung GILL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220375761
    Abstract: A dry etching method includes a first step of adsorbing first radicals into a surface of an etching target, wherein the first radicals are contained in first plasma generated from a plasma generator; and a second step of irradiating ion-beams extracted from second plasma generated from the plasma generator onto the surface of the etching target into which the radicals have been adsorbed, thereby desorbing a surface atomic layer of the etching target, wherein the first step is performed such that: a positive potential greater than a potential of the first plasma is applied to one or two selected from first to third grids, while a ground potential is applied to the rest thereof; and a negative potential equal to or lower than a potential of the third grid is applied to a substrate support structure.
    Type: Application
    Filed: May 24, 2022
    Publication date: November 24, 2022
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Geun Young YEOM, Doo San KIM, Yun Jong JANG, Ye Eun KIM, You Jung GILL, Ki Hyun KIM, Hee Ju KIM, You Jin JI
  • Publication number: 20210384374
    Abstract: Disclosed is a method for manufacturing a semiconductor light emitting device. The method includes a first step of forming a semiconductor structure in which a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer are sequentially stacked; and a second step of forming a mesa structure by removing a portion of each of the second conductive-type semiconductor layer and the active layer, wherein the second step includes: forming a mesa structure by etching a portion of each of the second conductive-type semiconductor layer and the active layer using a plasma etching process; and performing an atomic layer etching process on a surface of the mesa structure formed by the plasma etching process.
    Type: Application
    Filed: June 4, 2021
    Publication date: December 9, 2021
    Applicant: Research & Business Foundation Sungkyunkwan University
    Inventors: Geun Young YEOM, Dong Woo KIM, Youn Joon SUNG, Doo San KIM, Ju Eun KIM, You Jung GILL, Yun Jong JANG, Ye Eun KIM