Abstract: A memory module packaging test system may include a plurality of test slots into which a plurality of memory modules may be installed so that the system may simultaneously test the memory modules. The memory module packaging test system may use a server system for a registered dual in-line memory module (RDIMM) or a fully buffered dual in-line memory module (FBDIMM) so that the system may test an unbuffered dual in-line memory module (UDIMM).

Abstract: A memory module includes: an ODT circuit on a memory device and including pull-up and pull-down resistors connected between pull-up and pull-down transistors. A data masking (DM) pad is provided in a tap region of the module board. A current leakage monitoring unit is also provided and receives a ground state signal from the DM pad and a bit configuration signal from the memory device and disables the pull-up transistors to cut off a current path between the pull-up resistors of the ODT circuit and the DM pad during a ODT enable mode.

Abstract: A memory module, a memory unit, and a hub with a non-periodic clock and methods for using the same. An example memory module may include a phased locked loop, receiving an external, periodic clock and generating one or more internal periodic clocks and a plurality of memory units, receiving one of the internal periodic clocks or a non-periodic clock from an external source.

Abstract: A memory module includes a plurality of data ports configured to receive/transmit associated data and a plurality of memory devices. The plurality of memory devices include a first set of the memory devices in at least one rank, each memory device of the first set being coupled to each of the associated data ports, and a second set of the memory devices in at least one other rank, each memory device of the second set being configured to receive/transmit the associated data for the memory device through at least each associated memory device of the first set.

Abstract: Methods and apparatuses for entering at least one memory into a test mode are provided. At least one test MRS bit may be stored in a first register for controlling the memory. At least one test MRS code may be programmed into a second register. Each of the at least one bits stored in the first register may correspond one of the at least one test MRS codes stored in the second register.

Abstract: A method of testing a memory module comprising converting a hub of the memory module into a transparent mode, providing first data corresponding to a first address to the hub of the memory module, providing the first data of the hub of the memory module to a first address of a memory, providing first expected data to the hub of the memory module, outputting second data stored at the first address of the memory to the hub of the memory module, and comparing the second data with the first expected data.

Abstract: A memory module testing apparatus and method include a test slot adapted to receive a target memory module, wherein the target memory module includes a first memory unit to store information related to the target memory module. The memory module testing apparatus further includes a second memory unit adapted to store information related to a memory module, and a first switching unit adapted to selectively provide a driving signal to at least one of the first memory unit and the second memory unit.

Abstract: A method of testing a memory module comprising converting a hub of the memory module into a transparent mode, providing first data corresponding to a first address to the hub of the memory module, providing the first data of the hub of the memory module to a first address of a memory, providing first expected data to the hub of the memory module, outputting second data stored at the first address of the memory to the hub of the memory module, and comparing the second data with the first expected data.

Abstract: A semiconductor memory module and a semiconductor memory device are disclosed. In one embodiment, the invention provides a semiconductor memory module comprising a circuit board, a plurality of semiconductor memory devices adapted to operate during a test mode and a normal operation mode and mounted on the circuit board, a first signal line set comprising a plurality of first signal lines connected to the plurality of semiconductor memory devices, and a plurality of second signal line sets. Each semiconductor memory device comprises first terminals adapted to receive first signals from the first signal lines, second terminals connected to a corresponding one of the second signal line sets, a third terminal adapted to receive an enable signal during the test mode, and a signal transmitting unit adapted to output second signals to the second terminals in response to the enable signal.

Abstract: A memory module packaging test system may include a plurality of test slots into which a plurality of memory modules may be installed so that the system may simultaneously test the memory modules. The memory module packaging test system may use a server system for a registered dual in-line memory module (RDIMM) or a fully buffered dual in-line memory module (FBDIMM) so that the system may test an unbuffered dual in-line memory module (UDIMM).

Abstract: A semiconductor memory module and a semiconductor memory device are disclosed. In one embodiment, the invention provides a semiconductor memory module comprising a circuit board, a plurality of semiconductor memory devices adapted to operate during a test mode and a normal operation mode and mounted on the circuit board, a first signal line set comprising a plurality of first signal lines connected to the plurality of semiconductor memory devices, and a plurality of second signal line sets. Each semiconductor memory device comprises first terminals adapted to receive first signals from the first signal lines, second terminals connected to a corresponding one of the second signal line sets, a third terminal adapted to receive an enable signal during the test mode, and a signal transmitting unit adapted to output second signals to the second terminals in response to the enable signal.

Abstract: Methods and apparatuses for entering at least one memory into a test mode are provided. At least one test MRS bit may be stored in a first register for controlling the memory. At least one test MRS code may be programmed into a second register. Each of the at least one bits stored in the first register may correspond one of the at least one test MRS codes stored in the second register.

Abstract: A memory module testing apparatus that comprises a test slot adapted to receive a target memory module, wherein the target memory module comprises a first memory unit adapted to store information related to the target memory module, is disclosed. The memory module testing apparatus further comprises a second memory unit adapted to store information related to a memory module, and a first switching unit adapted to selectively provide a driving signal to at least one of the first memory unit and the second memory unit. A memory module testing method for the memory module testing apparatus is also disclosed.

Abstract: A memory module includes a first set of at least one first type of memory device and a second set of at least one second type of memory device having a higher capacity than the first type. In addition, an additional capacity portion of the first and second sets stores information for an additional function of the memory module, and a remaining capacity portion of the first and second sets forms a rank of the memory module. The memory module avoids an asymmetric topology of signal lines and yet provides additional memory capacity.

Abstract: A memory module, a memory unit, and a hub with a non-periodic clock and methods for using the same. An example memory module may include a phased locked loop, receiving an external, periodic clock and generating one or more internal periodic clocks and a plurality of memory units, receiving one of the internal periodic clocks or a non-periodic clock from an external source.

Abstract: A method of testing a memory module comprising converting a hub of the memory module into a transparent mode, providing first data corresponding to a first address to the hub of the memory module, providing the first data of the hub of the memory module to a first address of a memory, providing first expected data to the hub of the memory module, outputting second data stored at the first address of the memory to the hub of the memory module, and comparing the second data with the first expected data.

Abstract: A method of entering memory module mounted on a memory system or a plurality of memories mounted on the memory module into a test mode, and a first register and a second register for performing the method are introduced. Each of the memory manufacturers provides a different MRS code for entering the memory into the test mode and a different method of entering the memory into the test mode from one another. As a result, the number of the test MRS is stored in the first register for controlling the memory, and the test MRS codes are programmed into the second register. Additionally, each of the bits stored in the first register used for determining the number of the test MRS corresponds to each of the second registers that store a corresponding test MRS code, respectively.

Abstract: A multi-layer circuit board having an improved heat spreading performance is described. In a multi-layer circuit board structure configured such that insulating layers and interconnection conductive layers are alternately stacked, the interconnection conductive layers include a top interconnection conductive layer having a main surface on which circuit elements are mounted, a bottom interconnection conductive layer as a bottom surface layer facing the top interconnection conductive layer, an inner power conductive layer having a predetermined thickness, disposed between the top interconnection conductive layer and the bottom interconnection conductive layer, with some of the insulating layers interposed between the top and bottom interconnection conductive layers. The interconnection conductive layers can be of various thicknesses to facilitate heat diffusion. Heat diffusion can be accomplished with variations in thickness of either the insulating layers or electrically conductive layers.