Abstract: A thin film transistor substrate and a fabricating method thereof wherein a contacting size between an electrode and an active layer can be reduced to provide a small and light panel. In the thin film transistor substrate, a conductive layer is formed on the substrate. A first insulating layer for insulating the conductive layer overlies the conductive layer. A second insulating layer this is different from the first insulating layer overlies the first insulating layer. A third insulating layer overlies the second insulating layer. A contact through the first, second, and third insulating layers exposes a portion of the conductive layer and has a trapezoidal section. An electrode is connected to the conductive layer and overlies a portion of an inclined face of the contact hole. The inclined face of the contact hole includes a protrusion formed by a portion of the second insulating layer and creates an overhang structure.

Abstract: Disclosed is an anode material comprising a metal core layer capable of repetitive lithium intercalation/deintercalation; an amorphous carbon layer coated on the surface of the metal core layer, and a crystalline carbon layer coated on the amorphous carbon layer. The anode material not only maintains a high charge/discharge capacity, which is an advantage of a metal-based anode material, but also inhibits changes in the volume of a metal core layer caused by repetitive lithium intercalation/deintercalation in virtue of an amorphous carbon layer and a crystalline carbon layer, thereby improving the cycle life characteristics of cells.

Abstract: A thin film transistor substrate and a fabricating method thereof wherein a contacting size between an electrode and an active layer can be reduced to provide a small and light panel. In the thin film transistor substrate, a conductive layer is formed on the substrate. A first insulating layer for insulating the conductive layer overlies the conductive layer. A second insulating layer this is different from the first insulating layer overlies the first insulating layer. A third insulating layer overlies the second insulating layer. A contact through the first, second, and third insulating layers exposes a portion of the conductive layer and has a trapezoidal section. An electrode is connected to the conductive layer and overlies a portion of an inclined face of the contact hole. The inclined face of the contact hole includes a protrusion formed by a portion of the second insulating layer and creates an overhang structure.

Abstract: A self-refresh control circuit can be simplified by using a division value generated from an Extended Mode Register Set (EMRS) at low temperature without a limiter used in a Temperature Compensated Self Refresh (TCSR). The self-refresh control circuit comprises an EMRS TCSR basic cycle generating unit, a temperature sensor, a division setting unit and a self-refresh operating cycle generating unit. The EMRS TCSR basic cycle generating unit generates an EMRS TCSR basic cycle using a division value of an EMRS code. The temperature sensor generates a detecting signal depending on temperature monitored in a chip. The division setting unit generates a reference cycle by multiplying the EMRS TCSR basic cycle by a division value of the EMRS code selected in response to a selecting signal or by a division value corresponding to the detecting signal. The self-refresh operating cycle generating unit generates a self-refresh operating cycle with the reference cycle.