Abstract: A memory system and a method of operating the memory system are provided. The memory system may determine, on a determination that the memory system enters thermal throttling mode, a target status read check period based on threshold voltage distribution offset for the target memory die, and set a timer to transmit a status read command for the target memory die to the memory device based on the target status read check period.

Abstract: A memory system and a method of operating the memory system are provided. The memory system may determine, on a determination that the memory system enters thermal throttling mode, a target status read check period based on threshold voltage distribution offset for the target memory die, and set a timer to transmit a status read command for the target memory die to the memory device based on the target status read check period.

Abstract: A memory controller having an improved operation speed controls a memory device including a plurality of memory blocks. The memory controller includes: a remaining count determiner configured to determine a remaining count that is a number of program and erase operations to be additionally performed in the memory device based on a program/erase count received from the memory device, a retention period calculator configured to determine a retention period based on a power-off time and a power-on time of the memory device and a read voltage determiner configured to generate a changed read voltage table based on a default read voltage table and a coefficient determined according to the remaining count, and determine a read voltage to be used in the memory device according to the retention period among read voltages included in the changed read voltage table.

Abstract: Provided is a controller for controlling a memory device. The controller may include a media scanner suitable for performing a media scan operation of reading a predetermined size of data from the memory device in a predetermined cycle, detecting an error of the read data, generating corrected data of the read data, and storing the corrected data in the memory device, a period calculator suitable for calculating a power-off period, and a media scan controller suitable for changing the predetermined cycle according to the power-off period.

Abstract: Provided is a controller for controlling a memory device. The controller may include a media scanner suitable for performing a media scan operation of reading a predetermined size of data from the memory device in a predetermined cycle, detecting an error of the read data, generating corrected data of the read data, and storing the corrected data in the memory device, a period calculator suitable for calculating a power-off period, and a media scan controller suitable for changing the predetermined cycle according to the power-off period.

Abstract: A memory controller having an improved operation speed controls a memory device including a plurality of memory blocks. The memory controller includes: a remaining count determiner configured to determine a remaining count that is a number of program and erase operations to be additionally performed in the memory device based on a program/erase count received from the memory device, a retention period calculator configured to determine a retention period based on a power-off time and a power-on time of the memory device and a read voltage determiner configured to generate a changed read voltage table based on a default read voltage table and a coefficient determined according to the remaining count, and determine a read voltage to be used in the memory device according to the retention period among read voltages included in the changed read voltage table.