Abstract: A semiconductor device structure including a substrate, a resistor, and a first gate structure is provided. The substrate includes a resistor region and a metal-oxide-semiconductor (MOS) transistor region. The resistor is disposed on the substrate within the resistor region. The resistor includes a first dielectric layer, a metal layer, a second dielectric layer, and a semiconductor layer sequentially stacked on the substrate. The first gate structure is disposed on the substrate within the MOS transistor region. The first gate structure includes the first dielectric layer, the metal layer, and the semiconductor layer sequentially stacked on the substrate.

Abstract: A capacitor structure includes a plurality of conductive line levels located over the substrate. Each of the conductive line levels includes a first conductive line and a second conductive line. The first conductive lines in the conductive line levels form a first conductive line co-plane and the second conductive lines in the conductive line levels form a second conductive line co-plane. A first conductive end is electrically connected to the first conductive lines on the conductive line levels. A second conductive end is electrically connected to the second conductive lines on the conductive line levels. A plurality of vias are located between the neighboring conductive line levels and placed on only one of the first and second conductive line co-planes on a same level.

Abstract: A capacitor structure includes a plurality of conductive line levels located over the substrate. Each of the conductive line levels includes a first conductive line and a second conductive line. The first conductive lines in the conductive line levels form a first conductive line co-plane and the second conductive lines in the conductive line levels form a second conductive line co-plane. A first conductive end is electrically connected to the first conductive lines on the conductive line levels. A second conductive end is electrically connected to the second conductive lines on the conductive line levels. A plurality of vias are located between the neighboring conductive line levels and placed on only one of the first and second conductive line co-planes on a same level.

Abstract: A capacitor structure is provided. The capacitor structure comprises a plurality of parallel conductive line levels and a plurality of vias. Each conductive line level comprises first conductive lines parallel to each other and second conductive lines parallel to each other. Also, the first conductive lines on different conductive line levels are aligned to each other and the second conductive lines on different conductive line levels are aligned to each other so as to form first conductive line co-planes and second conductive line co-planes. The vias are located on the conductive line co-planes and between the conductive line levels for connecting the conductive lines on the neighboring conductive line levels. The vias, on a height level of each of the conductive line co-planes, are arranged only on one of the neighboring conductive line co-planes.

Abstract: A semiconductor device structure including a substrate, a resistor, and a first gate structure is provided. The substrate includes a resistor region and a metal-oxide-semiconductor (MOS) transistor region. The resistor is disposed on the substrate within the resistor region. The resistor includes a first dielectric layer, a metal layer, a second dielectric layer, and a semiconductor layer sequentially stacked on the substrate. The first gate structure is disposed on the substrate within the MOS transistor region. The first gate structure includes the first dielectric layer, the metal layer, and the semiconductor layer sequentially stacked on the substrate.

Abstract: A capacitor structure is provided. The capacitor structure comprises a plurality of parallel conductive line levels and a plurality of vias. Each conductive line level comprises first conductive lines parallel to each other and second conductive lines parallel to each other. Also, the first conductive lines on different conductive line levels are aligned to each other and the second conductive lines on different conductive line levels are aligned to each other so as to form first conductive line co-planes and second conductive line co-planes. The vias are located on the conductive line co-planes and between the conductive line levels for connecting the conductive lines on the neighboring conductive line levels. The vias, on a height level of each of the conductive line co-planes, are arranged only on one of the neighboring conductive line co-planes.

Abstract: A method for forming a thin film resistor includes providing a substrate having a transistor region and a thin film resistor region defined thereon, sequentially forming a dielectric layer, a metal layer and a first hard mask layer on the substrate, patterning the first hard mask layer to form at least a thin film resistor pattern in the thin film resistor region, sequentially forming a polysilicon layer and a second hard mask layer on the substrate, patterning the second hard mask layer to form at least a gate pattern in the transistor region, and performing an etching process to form a gate and a thin film resistor respectively in the transistor region and the thin film resistor region.

Abstract: A semiconductor device structure including a substrate, a resistor, and a first gate structure is provided. The substrate includes a resistor region and a metal-oxide-semiconductor (MOS) transistor region. The resistor is disposed on the substrate within the resistor region. The resistor includes a first dielectric layer, a metal layer, a second dielectric layer, and a semiconductor layer sequentially stacked on the substrate. The first gate structure is disposed on the substrate within the MOS transistor region. The first gate structure includes the first dielectric layer, the metal layer, and the semiconductor layer sequentially stacked on the substrate.

Abstract: A semiconductor device structure including a substrate, a resistor, and a first gate structure is provided. The substrate includes a resistor region and a metal-oxide-semiconductor (MOS) transistor region. The resistor is disposed on the substrate within the resistor region. The resistor includes a first dielectric layer, a metal layer, a second dielectric layer, and a semiconductor layer sequentially stacked on the substrate. The first gate structure is disposed on the substrate within the MOS transistor region. The first gate structure includes the first dielectric layer, the metal layer, and the semiconductor layer sequentially stacked on the substrate.

Abstract: A method for forming a thin film resistor includes providing a substrate having a transistor region and a thin film resistor region defined thereon, sequentially forming a dielectric layer, a metal layer and a first hard mask layer on the substrate, patterning the first hard mask layer to form at least a thin film resistor pattern in the thin film resistor region, sequentially forming a polysilicon layer and a second hard mask layer on the substrate, patterning the second hard mask layer to form at least a gate pattern in the transistor region, and performing an etching process to form a gate and a thin film resistor respectively in the transistor region and the thin film resistor region.