Patents by Inventor You-Shin Choi

You-Shin Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices including a resistor structure and methods of forming the same
    Patent number: 8981489
    Abstract: Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first interlayer insulating layer on the gate structure and the resistor structure. The semiconductor devices may also include a resistor trench plug vertically penetrating through the first interlayer insulating layer and contacting the resistor structure and a second interlayer insulating layer on the first interlayer insulating layer and the resistor trench plug. Further, the semiconductor devices may include a resistor contact plug vertically penetrating through the first and second interlayer insulating layers and contacting the resistor structure.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: March 17, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Junjie Xiong, Yoon-Hae Kim, Hong-Seong Kang, Yoon-Seok Lee, You-Shin Choi
  • Semiconductor devices including a resistor structure
    Patent number: 8969971
    Abstract: Semiconductor devices are provided. A semiconductor device may include a transistor area and a resistor area. The transistor area may include a gate structure. The resistor area may include an insulating layer and a resistor structure on the insulating layer. A top surface of the gate structure and a top surface of the resistor structure may be substantially coplanar.
    Type: Grant
    Filed: October 3, 2013
    Date of Patent: March 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Junjie Xiong, Yoon-Hae Kim, Hong-Seong Kang, Yoon-Seok Lee, You-Shin Choi
  • SEMICONDUCTOR DEVICES INCLUDING A RESISTOR STRUCTURE
    Publication number: 20140167180
    Abstract: Semiconductor devices are provided. A semiconductor device may include a transistor area and a resistor area. The transistor area may include a gate structure. The resistor area may include an insulating layer and a resistor structure on the insulating layer. A top surface of the gate structure and a top surface of the resistor structure may be substantially coplanar.
    Type: Application
    Filed: October 3, 2013
    Publication date: June 19, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Junjie Xiong, Yoon-Hae Kim, Hong-Seong Kang, Yoon-Seok Lee, You-Shin Choi
  • SEMICONDUCTOR DEVICES INCLUDING A RESISTOR STRUCTURE AND METHODS OF FORMING THE SAME
    Publication number: 20140167181
    Abstract: Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first interlayer insulating layer on the gate structure and the resistor structure. The semiconductor devices may also include a resistor trench plug vertically penetrating through the first interlayer insulating layer and contacting the resistor structure and a second interlayer insulating layer on the first interlayer insulating layer and the resistor trench plug. Further, the semiconductor devices may include a resistor contact plug vertically penetrating through the first and second interlayer insulating layers and contacting the resistor structure.
    Type: Application
    Filed: December 11, 2013
    Publication date: June 19, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Junjie Xiong, Yoon-Hae Kim, Hong-Seong Kang, Yoon-Seok Lee, You-Shin Choi
  • METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING METAL GATES
    Publication number: 20140017863
    Abstract: Methods of manufacturing a semiconductor device including metal gates are provided. The method may include forming a resistor pattern and a dummy gate electrode, which include polysilicon, and forming an impurity region adjacent to the dummy gate electrode. The method may further include replacing the dummy gate electrode with a gate electrode and then forming metal silicide patterns on the resistor pattern and the impurity region.
    Type: Application
    Filed: June 14, 2013
    Publication date: January 16, 2014
    Inventors: Yoon-Seok Lee, Yoon-Hae Kim, Hong-Seong Kang, Sung-Ho Son, JunJie Xiong, You-Shin Choi