Abstract: A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming first spacers covering both sidewalls of each of the first trenches, forming a plurality of second trenches by etching a bottom of each of the first trenches, forming second spacers covering both sidewalls of each of the second trenches, forming a plurality of third trenches by etching a bottom of each of the second trenches, forming an insulation layer covering exposed surfaces of the plurality of the substrate, and forming a contact which exposes one sidewall of each of the second trenches by selectively removing the second spacers.

Abstract: Provided are magnetic core-ceramic shell (e.g., magnetite (Fe3O4) core-calcium phosphate (Ca3(PO4)2) shell) nanocrystals with high crystallization degree, uniform size, and high chemical stability and a method for synthesizing the same. A core-shell structure is synthesized in a process of forming magnetite seeds corresponding to cores by the reduction of magnetite precursors and then, sequentially, coating the magnetite with Ca3(PO4)2 by the reduction of Ca3(PO4)2 precursors.

Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.