Abstract: Some implementations provide a semiconductor device (e.g., die) that includes a substrate, several metal layers and dielectric layers coupled to the substrate, a pad coupled to one of the plurality of metal layers, a first metal redistribution layer coupled to the pad, and a second metal redistribution layer coupled to the first metal redistribution layer. The second metal redistribution layer includes a cobalt tungsten phosphorous material. In some implementations, the first metal redistribution layer is a copper layer. In some implementations, the semiconductor device further includes a first underbump metallization (UBM) layer and a second underbump metallization (UBM) layer.

Abstract: Some implementations provide a semiconductor device (e.g., die) that includes a substrate, several metal layers and dielectric layers coupled to the substrate, a pad coupled to one of the plurality of metal layers, a first metal redistribution layer coupled to the pad, and a second metal redistribution layer coupled to the first metal redistribution layer. The second metal redistribution layer includes a cobalt tungsten phosphorous material. In some implementations, the first metal redistribution layer is a copper layer. In some implementations, the semiconductor device further includes a first underbump metallization (UBM) layer and a second underbump metallization (UBM) layer.

Abstract: An integrated circuit is disclosed. The integrated circuit includes an insulating material layer. The integrated circuit also includes a metal structure. Furthermore, the integrated circuit includes a via through the insulating material layer that is coupled to the metal structure for testing insulating material by applying dynamic voltage switching to two adjacent metal components of the metal structure.

Abstract: A method for reducing the scrap rate of fuse structures after laser repairing is provided. The method includes providing a semiconductor wafer comprising integrated circuits, performing a yield test on the semiconductor wafer to determine defective circuits, predetermining a wavelength limit, and keeping the semiconductor wafer away from lights having wavelengths lower than the wavelength limit. The defects on the semiconductors wafer are repaired by burning laser fuses. For copper-based fuse structures, the wavelength limit is about 550 nm.

Abstract: A method for reducing the scrap rate of fuse structures after laser repairing is provided. The method includes providing a semiconductor wafer comprising integrated circuits, performing a yield test on the semiconductor wafer to determine defective circuits, predetermining a wavelength limit, and keeping the semiconductor wafer away from lights having wavelengths lower than the wavelength limit. The defects on the semiconductors wafer are repaired by burning laser fuses. For copper-based fuse structures, the wavelength limit is about 550 nm.

Abstract: Method for thermally-machining large area features, and screen-depositing metallurgy on a ceramic dielectric greensheet. The method comprises an improvement over the conventional integrated disposable mask process, and involves the steps of outlining the large feature areas through a masking film laminated to a greensheet, using a high intensity energy beam such as a laser beam, electron beam, photon beam, etc, forming a stencil sheet having corresponding large area feature openings, and laminating the stencil sheet in registration over the masking film. An adhesive sheet is pressed against the back of the stencil sheet, through the stencil openings, to adhere to the outline features on the masking film and to remove them when the stencil sheet is separated from the masking film. Conductive paste is applied to the greensheet, through the large feature openings in the masking film, and the electroded greensheet is fired for use in preparing multi-layer ceramic packages.

Abstract: A debris control system is provided for an electron-beam drilling apparatus having a chamber encompassing a drilling area and a calibration area. The debris control system includes a calibration-area shielding assembly which shields a calibration area of such apparatus from drilling-generated debris and an isolation assembly which isolates drilling-generated debris within such drilling area.

Abstract: A high precision system for machining substrates by means of an energy beam includes real time digital signal processor control and a deflection system providing control, within a predetermined field of the substrate, of the angle at which the beam machines the substrate. An electron beam is used in a vacuum chamber in a preferred embodiment. The system also includes an x-y table for positioning the substrate and may have provision for detecting the x-y position and angular misregistration of the substrate. Dynamic forms and stigmator control may be used to produce a uniform beam within the field. The system allows a high speed vector machining process, which optimizes the overall system throughput by minimizing the settling time of the deflection system.

Abstract: A high precision system for machining substrates by means of an energy beam includes real time digital signal processor control and a deflection system providing control, within a predetermined field of the substrate, of the angle at which the beam machines the substrate. An electron beam is used in a vacuum chamber in a preferred embodiment. The system also includes an x-y table for positioning the substrate and may have provision for detecting the x-y position and angular misregistration of the substrate. Dynamic forms and stigmator control may be used to produce a uniform beam within the field. The system allows a high speed vector machining process, which optimizes the overall system throughput by minimizing the settling time of the deflection system.

Abstract: A high precision system for machining substrates by means of an energy beam includes real time digital signal processor control and a deflection system providing control, within a predetermined field of the substrate, of the angle at which the beam machines the substrate. An electron beam is used in a vacuum chamber in a preferred embodiment. The system also includes an x-y table for positioning the substrate and may have provision for detecting the x-y position and angular misregistration of the substrate. Dynamic forms and stigmator control may be used to produce a uniform beam within the field. The system allows a high speed vector machining process, which optimizes the overall system throughput by minimizing the settling time of the deflection system.