Patents by Inventor Youbiao ZOU

Youbiao ZOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10056452
    Abstract: A method for manufacturing a vertical super junction drift layer of a power semiconductor device. The method includes: a): adopting a P+ single crystal silicon to prepare a P+ substrate; b): finishing top processes of the devices on the P+ substrate, forming at least a P type region, manufacturing active area and metallizing the top surface of the P+ substrate; c): thinning the back surface of the P+ single crystal silicon; d): selectively implanting H+ ions at the back surface repeatedly and then annealing to form N pillars in the P type region; and e): metallizing the back surface.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: August 21, 2018
    Assignees: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC
    Inventors: Zehong Li, Wenlong Song, Xunyi Song, Hongming Gu, Youbiao Zou, Jinping Zhang, Bo Zhang
  • Publication number: 20160315142
    Abstract: A method for manufacturing a vertical super junction drift layer of a power semiconductor device. The method includes: a): adopting P+ single crystal silicon to prepare a P+ substrate; b): finishing top processes of the devices on the P+ substrate, forming at least P type region, manufacturing active area and metallizing the top surface of the P+ substrate; c): thinning the back surface of the P+ single crystal silicon; d): selectively implanting H+ ions at the back surface repeatedly and then annealing to form N pillars in the P type region; and e): metallizing the back surface.
    Type: Application
    Filed: June 29, 2016
    Publication date: October 27, 2016
    Inventors: Zehong LI, Wenlong SONG, Xunyi SONG, Hongming GU, Youbiao ZOU, Jinping ZHANG, Bo ZHANG