Abstract: An integrated circuit device includes an insulating structure, a source/drain region on the insulating structure, a pair of bottom semiconductor sheets being spaced apart from each other with the source/drain region therebetween in a first horizontal direction, a pair of channel regions spaced apart from the insulating structure with the bottom semiconductor sheets therebetween, a pair of gate lines respectively extending on the pair of channel regions on the bottom semiconductor sheets and extending longitudinally in a second horizontal direction perpendicular to the first horizontal direction, and a backside contact structure extending through the insulating structure to contact a bottom surface of the source/drain region, the backside contact structure including a first contact portion that has a width in the first horizontal direction increasing toward the source/drain region and a second contact portion that has a width in the first horizontal direction decreasing toward the source/drain region.

Abstract: A semiconductor device includes a substrate including an active pattern, and a channel pattern on the active pattern. The channel pattern includes a plurality of semiconductor patterns that are stacked and are spaced apart from each other, a source/drain pattern connected to the plurality of semiconductor patterns, and a gate electrode on the plurality of semiconductor patterns. The gate electrode includes respective parts that are between adjacent semiconductor patterns among the plurality of semiconductor patterns, and an uppermost part on an uppermost semiconductor pattern. The uppermost part includes a first metal pattern, a second metal pattern on the first metal pattern, a filling metal pattern on the second metal pattern, and a metal liner pattern between the first metal pattern and the second metal pattern. The metal liner pattern includes at least one selected from the group consisting of Ti, Ta, Nb, Al, W and Mo.

Abstract: The present invention provides pharmaceutical composition for the treatment of tauopathy-related diseases that can significantly improve cognitive and behavioral impairments by reducing neuronal uptake and propagation of disease-associated tau.

Abstract: An integrated circuit device includes an insulating structure, a source/drain region on the insulating structure, a pair of bottom semiconductor sheets being spaced apart from each other with the source/drain region therebetween in a first horizontal direction, a pair of channel regions spaced apart from the insulating structure with the bottom semiconductor sheets therebetween, a pair of gate lines respectively extending on the pair of channel regions on the bottom semiconductor sheets and extending longitudinally in a second horizontal direction perpendicular to the first horizontal direction, and a backside contact structure extending through the insulating structure to contact a bottom surface of the source/drain region, the backside contact structure including a first contact portion that has a width in the first horizontal direction increasing toward the source/drain region and a second contact portion that has a width in the first horizontal direction decreasing toward the source/drain region.

Abstract: A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 ?, and each of the first silicon oxide layers may have a thickness less than or equal to about 650 ?.

Abstract: A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 ?, and each of the first silicon oxide layers may have a thickness less than or equal to about 650 ?.

Abstract: A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 ?, and each of the first silicon oxide layers may have a thickness less than or equal to about 650 ?.

Abstract: A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 ?, and each of the first silicon oxide layers may have a thickness less than or equal to about 650 ?.

Abstract: A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 ?, and each of the first silicon oxide layers may have a thickness less than or equal to about 650 ?.

Abstract: A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 ?, and each of the first silicon oxide layers may have a thickness less than or equal to about 650 ?.