Patents by Inventor Youchiro Niitsu

Youchiro Niitsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a bipolar transistor having polysilicon layer which serves as an emitter electrode and passivating dangling bonds
    Patent number: 5137839
    Abstract: In a bipolar transistor, a polysilicon layer formed on an emitter diffusion layer is used as an emitter electrode. After the polysilicon layer is formed, an atom is introduced into the polysilicon layer. A thermal treatment is then performed, and the atom is combined with a dangling bond of a silicon atom existing on a crystal grain interface of the polysilicon layer, thereby passivating the dangling bond of the silicon atom.
    Type: Grant
    Filed: May 24, 1991
    Date of Patent: August 11, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Youchiro Niitsu