Patents by Inventor Youdong JIANG

Youdong JIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12381111
    Abstract: A method of wafer bonding includes: forming a first hole in a first insulation layer disposed over a first substrate; performing a first deposition-self-etch process to deposit a first conductive material in the first hole to form a first conductive plug; forming a second hole in a second insulation layer disposed over a second substrate; performing a second deposition-self-etch process to deposit a second conductive material in the second hole to form a second conductive plug; and bonding the first conductive plug with the second conductive plug to form a first grain fusion layer between the first conductive plug and the second conductive plug.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: August 5, 2025
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Chao Wang, Youdong Jiang, Yulong Zhang, Zhiyong Suo
  • Publication number: 20220189822
    Abstract: A method of wafer bonding includes: forming a first hole in a first insulation layer disposed over a first substrate; performing a first deposition-self-etch process to deposit a first conductive material in the first hole to form a first conductive plug; forming a second hole in a second insulation layer disposed over a second substrate; performing a second deposition-self-etch process to deposit a second conductive material in the second hole to form a second conductive plug; and bonding the first conductive plug with the second conductive plug to form a first grain fusion layer between the first conductive plug and the second conductive plug.
    Type: Application
    Filed: December 14, 2021
    Publication date: June 16, 2022
    Inventors: Chao WANG, Youdong JIANG, Yulong ZHANG, Zhiyong SUO