Abstract: Low dielectric constant films with improved elastic modulus. An SiO2-containing plasma treated coating is provided, the coating being formed by providing a porous network coating produced from a resin molecule containing at least 2 Si—H groups, curing the porous network coating by heating to a temperature sufficient to convert the porous network coating into a ceramic, and plasma treating the porous network coating to reduce an amount of Si—H bonds. Plasma treating the porous network coating provides a coating with improved modulus, but with a higher dielectric constant. Accordingly, the plasma treated coating can be annealed to provide an annealed, plasma treated coating having a lower dielectric constant and a comparable elastic modulus. The annealed, SiO2-containing plasma treated coating can have a dielectric constant between about 1.1 and about 3.5, and an elastic modulus greater than or about 4 GPa.

Abstract: Low dielectric constant films with improved elastic modulus. An SiO2-containing plasma treated coating is provided, the coating being formed by providing a porous network coating produced from a resin molecule containing at least 2 Si—H groups, curing the porous network coating by heating to a temperature sufficient to convert the porous network coating into a ceramic, and plasma treating the porous network coating to reduce an amount of Si—H bonds. Plasma treating the porous network coating provides a coating with improved modulus, but with a higher dielectric constant. Accordingly, the plasma treated coating can be annealed to provide an annealed, plasma treated coating having a lower dielectric constant and a comparable elastic modulus. The annealed, SiO2-containing plasma treated coating can have a dielectric constant between about 1.1 and about 3.5, and an elastic modulus greater than or about 4 GPa.

Abstract: Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups where the coating has been thermally cured and has a dielectric constant in the range of from about 1.1 to about 3.5, and plasma treating the coating to convert the coating into porous silica. Plasma treatment of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma treated for between about 15 and 120 seconds at a temperature less than or about 350° C. The plasma treated coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma treated coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the initial porous coating. The annealing temperature is preferably in excess of or about 350° C., and the annealing time is preferably at least or about 120 seconds.

Abstract: This invention pertains to a method of producing low dielectric coatings from hydrogen silsesquioxane resin. The method for producing the coatings comprises applying a film of hydrogen silsesquioxane resin onto a substrate and thereafter curing the film by first heating at a temperature of about 325.degree. C. to 350.degree. C. thereafter heating at a temperature of about 400.degree. C. to 450.degree. C. until the normalized SiH bond density is 50 to 80%. This two step curing process produces films having lower dielectric constant and improved mechanical properties.

Abstract: This invention pertains to a method for producing an insoluble coating on a substrate by curing a composition comprising hydrogen silsesquioxane at a temperature of 375.degree. C. or less for a time sufficient to produce a coating having >80% SiH. It has been found that when the hydrogen silsesquioxane resin is cured at a temperature of 375.degree. C. or less that that the insoluble SiH containing coating shows improved film stress.