Patents by Inventor Youfong Hsieh

Youfong Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5553502
    Abstract: A capacitive pressure sensor has a plate and a diaphragm formed of alumina and hermetically sealed in a spaced relationship, thereby defining a chamber therebetween. Conductive layers are formed on the plate and the diaphragm in opposition. An evacuation passage is formed through the plate such that the chamber pneumatically communicates with the outside. A recess is formed in an outer portion of the evacuation passage, and a tapered throat is formed in an inner portion of the evacuation passage. The chamber is substantially evacuated, and the evacuation passage is hermetically sealed by placing an indium chip and then an alumina plug in the recess. The plug is forced against the indium chip, thereby extruding indium down into the throat and up into the recess around the plug. By extruding the indium, the indium chip is plastically deformed, thereby exposing unoxidized indium to the alumina of the plate and the plug. An oxidation reduction reaction occurs and forms a chemical bond.
    Type: Grant
    Filed: December 22, 1994
    Date of Patent: September 10, 1996
    Assignee: Kavlico Corporation
    Inventor: Youfong Hsieh