Patents by Inventor Youhei Ishida

Youhei Ishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11971479
    Abstract: An ultrasonic sensor is provided with an ultrasonic element that converts between an electrical signal and an ultrasonic vibration and an element accommodating case having a bottomed cylindrical shape and accommodating the ultrasonic element inside thereof. The element accommodating case includes a side plate portion formed in a cylindrical shape that surrounds a directional center axis, and a bottom plate portion that closes one end side of the side plate portion in an axial direction which is parallel to the directional center axis. The ultrasonic element is attached to the bottom plate portion. The bottom plate portion includes at least one protrusion. The protrusions vibrate together with the bottom plate portion when the bottom plate portion vibrates as an ultrasonic vibration.
    Type: Grant
    Filed: November 4, 2021
    Date of Patent: April 30, 2024
    Assignee: DENSO CORPORATION
    Inventors: Masayoshi Satake, Youhei Suzuki, Kensuke Kobayashi, Dai Kondo, Syoya Ishida, Yudai Yamamoto, Kenji Fukabori
  • Patent number: 11963402
    Abstract: A display device includes a light-emitting element layer including a plurality of light-emitting elements. The light-emitting element layer includes, for each of the plurality of light-emitting elements, a first electrode and a plurality of openings exposing the first electrode, and includes an edge cover covering an end portion of the first electrode, a plurality of light-emitting layers covering each of the plurality of openings, and a second electrode that is common to the plurality of light-emitting elements and covers the plurality of light-emitting layers. The second electrode includes a metal nanowire. Furthermore, the light-emitting element layer includes an auxiliary wiring line provided in a lattice pattern in a position overlapping the edge cover, and the auxiliary wiring line and the metal nanowire are electrically connected to each other.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: April 16, 2024
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Masayuki Kanehiro, Youhei Nakanishi, Takeshi Ishida
  • Publication number: 20080076201
    Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
    Type: Application
    Filed: November 27, 2007
    Publication date: March 27, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kazuhiko Fukutani, Takao Yonehara, Hirokatsu Miyata, Youhei Ishida, Tohru Den
  • Patent number: 7329387
    Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
    Type: Grant
    Filed: August 4, 2004
    Date of Patent: February 12, 2008
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuhiko Fukutani, Takao Yonehara, Hirokatsu Miyata, Youhei Ishida, Tohru Den
  • Publication number: 20060120918
    Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
    Type: Application
    Filed: August 4, 2004
    Publication date: June 8, 2006
    Applicant: Canon Kabushiki Kaisha
    Inventors: Kazuhiko Fukutani, Takao Yonehara, Hirokatsu Miyata, Youhei Ishida, Tohru Den
  • Patent number: 5583218
    Abstract: Carbapenem derivatives of formula (I): ##STR1## wherein (a) R.sub.1 is a hydrogen atom, an alkyl group of from 1 to 6 carbon atoms, a hydroxy-lower alkyl group or a protected hydroxy-lower alkyl group of from 1 to 6 carbon atoms in its alkyl moiety, (b) COOR.sub.2 is a carboxyl group, a carboxylate anion or a protected carboxyl group, (c) R.sub.3 is an alkyl group of from 1 to 6 carbon atoms and (d) R.sub.4 is a substituted or unsubstituted heterobicyclic group of formula (II): ##STR2## in which the partial structure ##STR3## is a 5- or 6-membered, saturated or unsaturated, nitrogen-containing heterocycle containing 1 to 4 hereto atoms each selected from the group consisting of oxygen, sulfur and nitrogen, at least one hetero atom being nitrogen, and is which R.sub.5 and R.sub.6 each is a hydrogen atom or an appropriate substituent, any isomeric form thereof, and pharmacologically acceptable salts thereof are potent and stable antimicrobial agents.
    Type: Grant
    Filed: February 13, 1996
    Date of Patent: December 10, 1996
    Assignee: Daiichi Pharmaceutical Co., Ltd.
    Inventors: Makoto Takemura, Toshiyuki Nishi, Hiroshi Susaki, Youhei Ishida, Hiroko Koda, Takeshi Hayano