Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide substrate and a protective film covering at least partly a main surface of the silicon carbide substrate and one or more side surfaces of the silicon carbide substrate. Therefore, contact of the side surface of the silicon carbide substrate with the moisture gathering material may be avoided, and the breakdown behavior and the long-term reliability of the semiconductor device may be further improved.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide substrate and a protective film covering at least partly a main surface of the silicon carbide substrate and one or more side surfaces of the silicon carbide substrate. Therefore, contact of the side surface of the silicon carbide substrate with the moisture gathering material may be avoided, and the breakdown behavior and the long-term reliability of the semiconductor device may be further improved.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide drift layer, a buried silicon carbide layer and an oxide semiconductor layer; the buried silicon carbide layer is located within the silicon carbide drift layer and the buried silicon carbide layer is covered by the oxide semiconductor layer. Therefore, breakdown behavior and/or long-time reliability of the semiconductor device may be further improved.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide drift layer, a buried silicon carbide layer and an oxide semiconductor layer; the buried silicon carbide layer is located within the silicon carbide drift layer and the buried silicon carbide layer is covered by the oxide semiconductor layer. Therefore, breakdown behavior and/or long-time reliability of the semiconductor device may be further improved.

Abstract: A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

Abstract: A semiconductor device includes: a semiconductor substrate including: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed in a surface of the body region; a trench, which reaches the drift region; an electric-field relaxation layer, which is formed on at least a portion of a bottom surface out of inner walls of the trench and is electrically connected to the impurity region; a control electrode, which is formed in the trench; an insulating film, which is formed between the control electrode and both the inner walls of the trench and the electric-field relaxation layer; and an electrode, which is connected to the impurity region.

Abstract: A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

Abstract: Provided is a full color image forming method wherein high color reproducibility especially on a blue system and a green system can be obtained and an excellent gradation property can be obtained in a full color image to be obtained. The full color image forming method for forming a full color image by using at least yellow toner, magenta toner, and two kinds of cyan toners (1, 2) is characterized in that a toner image formed by the cyan toner (1) alone has the value of the maximum color saturation (C*) of not less than 50 and the value of lightness (L*) in a color space represented by an L*a*b* colorimetric system of not less than 30 and not more than 52, and that a toner image formed by the cyan toner (2) alone has the value of the maximum color saturation (C*) of not less than 50 and the value of the lightness (L*) in the color space represented by the L*a*b* colorimetric system of not less than 58 and not more than 75.

Abstract: Provided is a full color image forming method wherein high color reproducibility especially on a blue system and a green system can be obtained and an excellent gradation property can be obtained in a full color image to be obtained. The full color image forming method for forming a full color image by using at least yellow toner, magenta toner, and two kinds of cyan toners (1, 2) is characterized in that a toner image formed by the cyan toner (1) alone has the value of the maximum color saturation (C*) of not less than 50 and the value of lightness (L*) in a color space represented by an L*a*b* colorimetric system of not less than 30 and not more than 52, and that a toner image formed by the cyan toner (2) alone has the value of the maximum color saturation (C*) of not less than 50 and the value of the lightness (L*) in the color space represented by the L*a*b* calorimetric system of not less than 58 and not more than 75.