Abstract: A semiconductor IC device 100 comprises an active area 102 including a plurality of unit cells 101a and 101b, and a plurality of electrodes 103 disposed in a zigzag fashion along the periphery of the active area 102. Signal I/O electrodes 103a are disposed on the first row of the zigzag electrode arrangement while the power supply and ground electrodes 103b and 103c are alternately disposed on the second row of the zigzag electrode arrangement. Owing to this constitution, power supply and ground electrode 103b and 103c may exist separately from signal I/O electrode 103a, so that a sufficient number of power supply and ground electrodes 103b and 103c can be secured even in the case that all of available signal I/O electrodes 103a are fully used for maximum operation of the circuit portion (active area) 102.

Abstract: In order to solve the aforementioned problems, a semiconductor device according to the present invention comprises a semiconductor chip, a plurality of first electrode pads respectively placed along a peripheral edge portion of the semiconductor chip and having first and second transverse ends, and a plurality of second electrode pads respectively having transverse ends near from center lines of the semiconductor chip, the transverse ends being respectively placed at the same distances from the center lines as the first transverse ends of the first electrode pads along the peripheral edge portion of the semiconductor chip, and having widths broader than those of the first electrode pads.The width of each second electrode pad is formed to 1.5 to 2 times as long as that of each first electrode pad.Wires for electrically connecting the first and second electrode pads and leads are formed so as to be bonded at substantially the same intervals.