Patents by Inventor Youichi Machii

Youichi Machii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10312402
    Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Grant
    Filed: April 26, 2014
    Date of Patent: June 4, 2019
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi
  • Patent number: 9608143
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Grant
    Filed: November 10, 2013
    Date of Patent: March 28, 2017
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20140227821
    Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 26, 2014
    Publication date: August 14, 2014
    Applicant: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Youichi MACHII, Masato YOSHIDA, Takeshi NOJIRI, Kaoru OKANIWA, Mitsunori IWAMURO, Shuichiro ADACHI
  • Patent number: 8801971
    Abstract: Provided are a copper conductor film and manufacturing method thereof, and patterned copper conductor wiring, which have superior conductivity and wiring pattern formation, and with which there is no decrease in insulation between circuits, even at narrow wiring widths and narrow inter-wiring spacing.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: August 12, 2014
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Hideo Nakako, Kazunori Yamamoto, Yasushi Kumashiro, Youichi Machii, Shunya Yokozawa, Yoshinori Ejiri, Katsuyuki Masuda
  • Publication number: 20140060385
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: November 5, 2013
    Publication date: March 6, 2014
    Applicant: Hitachi Chemical Company, Ltd.
    Inventors: Youichi MACHII, Masato YOSHIDA, Takeshi NOJIRI, Kaoru OKANIWA, Mitsunori IWAMURO, Shuuichirou ADACHI, Takuya Aoyagi
  • Publication number: 20130295276
    Abstract: There is provided a method wherein a surface treating agent, which is essential for making copper particles antioxidative and dispersing the copper particles in the prior art, is hardly used, but copper particles, which cause little electromigration and are small in the price rate of material itself, are used to form a low-resistance copper wiring pattern while the generation of cracks therein is restrained. The method includes the step of using a dispersion slurry wherein copper based particles having a copper oxide surface are dispersed to form any pattern over a substrate, and the step of reducing the copper oxide surface of the copper based particles in the pattern with atomic form hydrogen to return the oxide to copper, and sintering particles of the copper metal generated by the reduction and bonding the particles to each other.
    Type: Application
    Filed: July 3, 2013
    Publication date: November 7, 2013
    Inventors: Hideo NAKAKO, Kazunori YAMAMOTO, Youichi MACHII, Yasushi KUMASHIRO, Shunya YOKOZAWA, Yoshinori EJIRI, Katsuyuki MASUDA
  • Patent number: 8410000
    Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: April 2, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Satou, Keiko Kizawa
  • Patent number: 8404599
    Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: March 26, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Satou, Keiko Kizawa
  • Publication number: 20130025669
    Abstract: The invention provides a photovoltaic cell substrate that is a semiconductor substrate comprising an n-type diffusion layer, an n+-type diffusion layer having a higher n-type impurity concentration than the n-type diffusion layer, and a concave portion at a surface of the n+-type diffusion layer.
    Type: Application
    Filed: July 24, 2012
    Publication date: January 31, 2013
    Inventors: Tetsuya SATO, Masato Yoshida, Takeshi Nojiri, Youichi Machii, Mitsunori Iwamuro, Akihiro Orita
  • Publication number: 20120184062
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: March 22, 2012
    Publication date: July 19, 2012
    Inventors: YOUICHI MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Takuya Aoyagi
  • Publication number: 20120178201
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: March 23, 2012
    Publication date: July 12, 2012
    Inventors: YOUICHI MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Takuya Aoyagi
  • Publication number: 20120125659
    Abstract: Provided are a copper conductor film and manufacturing method thereof, and patterned copper conductor wiring, which have superior conductivity and wiring pattern formation, and with which there is no decrease in insulation between circuits, even at narrow wiring widths and narrow inter-wiring spacing.
    Type: Application
    Filed: December 17, 2008
    Publication date: May 24, 2012
    Inventors: Hideo Nakako, Kazunori Yamamoto, Yasushi Kumashiro, Youichi Machii, Shunya Yokozawa, Yoshinori Ejiri, Katsuyuki Masuda
  • Publication number: 20120122264
    Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.
    Type: Application
    Filed: November 17, 2011
    Publication date: May 17, 2012
    Inventors: Youichi MACHII, Masato YOSHIDA, Takeshi NOJIRI, Kaoru OKANIWA, Mitsunori IWAMURO, Shuuichirou ADACHI, Akihiro ORITA, Tetsuya SATOU, Keiko KIZAWA
  • Publication number: 20120122263
    Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.
    Type: Application
    Filed: November 17, 2011
    Publication date: May 17, 2012
    Inventors: Youichi MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Satou, Keiko Kizawa
  • Publication number: 20120122265
    Abstract: The method for producing a photovoltaic cell includes applying an n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium onto a first region on one surface side of a semiconductor substrate; applying a p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium onto a second region other than the first region on the surface of the semiconductor substrate where the first region is provided; a thermal diffusion process in which an n-type diffusion layer and a p-type diffusion layer are formed by heat-treating the semiconductor substrate onto which the n-type diffusion layer forming composition and the p-type diffusion layer forming composition are applied; and forming an electrode on each of the first region where the n-type diffusion layer is formed and the second region where the p-type diffusion layer is formed, respectively.
    Type: Application
    Filed: November 17, 2011
    Publication date: May 17, 2012
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Satou, Keiko Kizawa
  • Patent number: 8075800
    Abstract: A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: December 13, 2011
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Naoyuki Koyama, Youichi Machii, Masato Yoshida, Masato Fukasawa, Toranosuke Ashizawa
  • Publication number: 20110256658
    Abstract: In a method for producing a photovoltaic cell, the improvement comprising: 1) coating a portion of a semiconductor substrate with a layer of a composition comprising donor element-containing glass particles and a dispersion medium, and 2) heating the coated semiconductor substrate to a temperature sufficient to cause donor element diffusion from the glass particles into the semiconductor substrate so as to form an n-type diffusion region in the semiconductor substrate.
    Type: Application
    Filed: January 25, 2011
    Publication date: October 20, 2011
    Inventors: YOUICHI MACHII, Masato Yoshida, Takashi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20110212564
    Abstract: In a method for producing a photovoltaic cell, the improvement comprising: 1) coating a portion of a semiconductor substrate with a layer of a composition comprising acceptor element-containing glass particles and a dispersion medium, and 2) heating the coated semiconductor substrate to a temperature sufficient to cause acceptor element diffusion from the glass particles into the semiconductor substrate so as to form an p-type diffusion region in the semiconductor substrate.
    Type: Application
    Filed: January 25, 2011
    Publication date: September 1, 2011
    Inventors: YOUICHI MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20110195540
    Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: January 25, 2011
    Publication date: August 11, 2011
    Inventors: YOUICHI MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi
  • Publication number: 20110195541
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: January 25, 2011
    Publication date: August 11, 2011
    Inventors: YOUICHI MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Takuya Aoyagi