Abstract: A vertical furnace for heat-treating a semiconductor is capable of effectively and safely accomplishing the heat-treating of a semiconductor. The vertical furnace includes a furnace section which is opened at the lower end thereof to allow a boat for supporting a semiconductor thereon to be introduced and removed through the lower opened end with respect to the furnace section. Also, a vertical furnace is adapted to effectively prevent a semiconductor from being polluted by dust in an operation space.

Abstract: A vertical furnace for heat-treating a semiconductor is disclosed which is capable of effectively and safely accomplishing the heat-treating of a semiconductor. The vertical furnace includes a furnace section which is open at the lower end thereof to allow a boat for supporting a semiconductor thereon to be introduced and removed through the lower open end with respect to the furnace section. Also, a vertical furnace is disclosed which is adapted to effectively prevent a semiconductor from being polluted by dust in an operation space.

Abstract: A system for controlling the temperature and/or temperature distribution in a semiconductor diffusion furnace. The temperature and/or temperature distribution inside the reactor tube of the furnace is directly detected by thermocouple means inserted in the reactor tube, and correction is effected with respect to the temperature and/or temperature distribution on the basis of the foregoing detection. There are also disclosed thermocouple devices for use with the aforementioned control system. Each of the thermocouple devices can be manufactured at lower cost and is arranged to provide for a high freedom of measurements.