Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z??0.4x+24.6 is satisfied.

Abstract: Provided is a photovoltaic apparatus including: a power generation part including a plurality of power generating elements each generating power in accordance with an amount of received light, the power generation part having a light receiving surface and a back surface positioned on an opposite side to the light receiving surface; a function part provided separately from the power generation part and configured to provide functions regarding the photovoltaic apparatus; and a position changeable part provided between the power generation part and the function part and capable of changing positions of the power generation part and the function part, wherein the back surface of the power generation part faces the function part face, and the position changeable part is capable of changing the positions of the power generation part and the function part while maintaining a state where the back surface of the power generation part faces the function part.

Abstract: This power generation circuit unit includes a wiring substrate and a plurality of power generating elements mounted to the wiring substrate. The wiring substrate includes: a first substrate (32E) and a second substrate (32F) to each of which the power generating element is mounted; and a coupling portion (33L) configured to couple the first substrate (32E) and the second substrate (32F) together. The first substrate (32E) can be disposed at at least two positions of: a first position separated from the second substrate (32F) by a first distance; and a second position separated from the second substrate (32F) by a second distance being greater than the first distance. The coupling portion (33L) has an FPC (flexible printed circuits). In a state where the first substrate is disposed at the second position, at least a part of the coupling portion (33L) is twisted.

Abstract: This power generation module includes: a power generating portion (30) including a power generating element (19); and a wiring substrate. The wiring substrate includes: a reinforcement plate; and a flexible printed circuit (79) provided above the reinforcement plate. The flexible printed circuit (79) has: an FPC land portion (70) configured to have the power generating portion (30) mounted thereto; and a FPC wire portion (73) connected to the FPC land portion (70). The width of the FPC wire portion (73) is smaller than the width of the FPC land portion (70).

Abstract: This wiring module includes: a wiring substrate; a base portion at which the wiring substrate is placed; and an adhesive layer configured to adhere the wiring substrate to the base portion, wherein the wiring substrate includes: a land portion configured to have a power generating element mounted thereto; and a wire portion configured to be electrically connected to the power generating element, the adhesive layer has: a land adhesion region configured to adhere the land portion to the base portion; and a wire adhesion region configured to adhere the wire portion to the base portion, and a width of the wire adhesion region is smaller than a width of the land adhesion region.

Abstract: A wiring substrate is configured to have a power generating portion mounted thereto. The wiring substrate includes a land portion and a wire portion. The width of the wire portion is smaller than the width of the land portion.

Abstract: A method produces a light-receiving device by growing a light-receiving layer having an undoped multi-quantum well structure; growing a cap layer on the light-receiving layer while the cap layer is doped with a p-type impurity during its growth; growing a mesa structure; growing a protective film on surfaces of the mesa structure; and annealing to form a p-n junction. The mesa structure is defined by a surrounding trench. Alternatively, a selective growth mask can be formed on the light-receiving layer whereafter the cap layer is grown on the light-receiving layer by use of the mask. In the alternative, the p-n junction is formed by diffusing p-type impurity from a p-type contact layer of the cap layer through a concentration adjusting layer thereof to the light-receiving layer.

Abstract: This photovoltaic module includes: a power generating element; and a housing which is closed, the housing having: a concentrating portion provided with a lens configured to concentrate sunlight; a bottom portion in which the power generating element is disposed; and a side wall serving as an outer frame for the bottom portion and supporting the concentrating portion, wherein the lens includes: a glass substrate; and a silicone resin or an acrylic resin provided on the glass substrate, and the side wall is formed by use of PET (polyethylene terephthalate) or PBT (polybutylene terephthalate).

Abstract: A concentrator photovoltaic unit being an optical system base unit includes: a concentrating portion configured to converge sunlight; a cell configured to receive light converged by the concentrating portion to generate power; a package including a frame portion, the frame portion having insulating property and surrounding the cell, the package being in integrated relation with the cell; a shield plate provided between the concentrating portion and the cell, and including an opening allowing light converged by the concentrating portion to selectively pass therethrough; and a protection plate being a heat-resistant member provided on the frame portion to make the cell expose to the light and to shield the package, the protection plate being in contact with nothing but the frame portion, and securing a predetermined insulation distance from a live portion of the cell.

Abstract: This photovoltaic module includes: a power generating element configured to receive light to generate power; and a housing which is closed, the housing having: a concentrating portion provided with a lens configured to concentrate sunlight; a bottom portion in which the power generating element is disposed; and a side wall serving as an outer frame for the bottom portion and supporting the concentrating portion. The side wall is formed from a resin and has at least one vent hole.

Abstract: A flexible printed wiring board includes a first strip-shaped member and a second strip-shaped member each including a conductive part and an insulating part covering the conductive part; and a first connecting member including a conductive part and an insulating part covering the conductive part, the first connecting member connecting a first end of the first strip-shaped member and a first end of the second strip-shaped member to each other. The conductive parts of the first strip-shaped member, the second strip-shaped member, and the first connecting member are continuous with each other. The first strip-shaped member and the second strip-shaped member are capable of being linearly arranged when the first connecting member is bent and the first end of the first strip-shaped member and the first end of the second strip-shaped member face each other.

Abstract: A concentrator photovoltaic module including: a flexible printed circuit provided in contact with a bottom surface of a housing; and a primary concentrating portion formed by a plurality of lens elements being arranged, each lens element concentrating sunlight, wherein the flexible printed circuit includes: an insulating base material and a conductive pattern; a plurality of power generating elements provided on the pattern, so as to correspond to the lens elements, respectively; a cover lay as a covering layer having insulating property and a low water absorption not higher than a predetermined value, the cover lay covering and sealing a conductive portion including the pattern on the insulating base material; and an adhesive layer having insulating property and a low water absorption not higher than the predetermined value, the adhesive layer bonding the insulating base material and the covering layer together.

Abstract: Provided is a flexible printed circuit including: a film-shaped insulating base material having flexibility and having a withstand voltage value of at least 2000 V; and an electric conductor layer formed on the insulating base material and forming a circuit pattern, wherein with respect to the insulating base material, a principal component thereof is a polyimide and a filler content thereof is 0%. Thus, a flexible printed circuit can be obtained that has an insulating base material which suppresses decrease in withstand voltage performance even in a high humidity environment.

Abstract: The joint structure includes: a junction box configured to connect an internal circuit of an apparatus and an external conductor to each other; a metal electrode being in the junction box and to be joined to the external conductor; and a flexible printed circuit in a strip shape, the flexible printed circuit forming the internal circuit and having an end portion to be joined to the metal electrode. The metal electrode has a joint portion to be joined to the end portion in a superposed manner, and the joint portion in a free and lone state before being superposed on the end portion is ensured to have a gap greater than the thickness of the end portion (including solder), between the joint portion and its opposed surface, and has movability toward the opposed surface side when the joint portion is pressed.

Abstract: In a concentrator photovoltaic unit configured to guide sunlight concentrated by a primary concentrating portion to a power generating element by means of a secondary concentrating portion, the secondary concentrating portion includes: a secondary lens having a three-dimensional shape; and a cover portion being translucent and having a refractive index higher than that of air and lower than that of the secondary lens, the cover portion covering at least a surface on which the sunlight is incident in a surface of the secondary lens, in a thin film shape extending along the surface on which the sunlight is incident. By arranging a large number of the units, a concentrator photovoltaic module can be configured. By arranging a large number of the concentrator photovoltaic modules, a concentrator photovoltaic panel can be configured. By further providing a driving device for tracking the sun, a concentrator photovoltaic apparatus can be configured.

Abstract: A light-receiving device includes a light-receiving layer having an undoped multi-quantum well structure; a cap layer disposed on the light-receiving layer, the cap layer including a semiconductor layer doped with a p-type impurity; a mesa structure including the cap layer; a p-type region extending from the p-type semiconductor layer toward the light-receiving layer, the p-type region including the p-type impurity diffused from the semiconductor layer in the mesa structure; a p-n junction formed at an end of the p-type region; and an electrode disposed on the cap layer of the mesa structure. The mesa structure is defined by a trench surrounding the mesa. The trench has a bottom that reaches the vicinity of an upper surface of the light-receiving layer. The p-n junction is located in the light-receiving layer or at the boundary between the light-receiving layer and the cap layer disposed on the light-receiving layer.