Patents by Inventor Youichi Ohnishi

Youichi Ohnishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5609739
    Abstract: A sputtering apparatus for performing sputtering operation by using a rectangular target made of ferromagnetic material, the apparatus includes an electrode in which one first permanent magnet is disposed on each side edge of a front surface of the target, polarities of the first magnets confronting each other with the target interposed between the first magnets are opposite to each other, one second permanent magnet is disposed on each side edge of a rear surface of the target, polarities of the second magnets confronting each other with the target interposed between the second magnets are opposite to each other, and the polarity of each second magnet disposed on the rear surface of the target is the same as that of the first magnet disposed on the front surface of the target.
    Type: Grant
    Filed: December 23, 1994
    Date of Patent: March 11, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Isamu Aokura, Hitoshi Yamanishi, Youichi Ohnishi, Tanejiro Ikeda
  • Patent number: 5600520
    Abstract: In a laminated magnetic head core, Fe--M--N system soft magnetic thin films (M being at least one element selected from the group consisting of Ta, Nb, Zr, and Hf) and non-magnetic insulating films are alternately laminated. Each of the soft magnetic thin films is 0.2-10 .mu.m thick. Each of the non-magnetic insulating films is 10 through 1000 nm thick. One of the soft magnetic thin films shows high magnetic permeability in a different direction from that of an adjacent soft magnetic thin film via the non-magnetic insulating film within a film surface of the soft magnetic thin film.
    Type: Grant
    Filed: May 16, 1995
    Date of Patent: February 4, 1997
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Isamu Aokura, Kumio Nago, Hitoshi Yamanishi, Hiroshi Sakakima, Youichi Ohnishi
  • Patent number: 5554222
    Abstract: An ionization deposition apparatus includes an ion source which is located in a vacuum chamber and which is provided with gas introduction ports for supplying a gaseous film material into the vacuum chamber, a filament unit, which is separated into a plurality of independently controllable filaments, for generating thermoelectrons when the filaments are heated by filament currents, and an anode electrode for accelerating and colliding the thermoelectrons against molecules of the gaseous film material to thereby turn the molecules to plasma. A holder for holding a to-be-deposited object, the holder being placed confronting the anode electrode of the ion source in the vacuum chamber, and connected to a bias source to attract ions in the plasma to a surface of the holder.
    Type: Grant
    Filed: July 12, 1995
    Date of Patent: September 10, 1996
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Munekazu Nishihara, Masahide Yokoyama, Hatsuhiko Shibasaki, Youichi Ohnishi
  • Patent number: 5429731
    Abstract: The present invention relates to a method for forming a layer of isotropic soft magnetic nitride alloy even by means of mass-production apparatus wherein a target size is large in comparison to a distance between a substrate and a target, by using a bias sputtering method wherein a negative bias voltage is continuously applied to a substrate and sputtering is carried out in Ar atmosphere mixed with nitrogen gas or periodically mixed with nitrogen gas. Furthermore, the present invention may include a heat treatment of the soft magnetic nitride alloy layer deposited on the substrate in a temperature of more than 300.degree..degree.C. to less than 800.degree. C. to improve a soft magnetic characteristic.
    Type: Grant
    Filed: July 6, 1993
    Date of Patent: July 4, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Koichi Osano, Hiroshi Sakakima, Keita Ihara, Mitsuo Satomi, Kumio Nago, Youichi Ohnishi, Kunio Tanaka, Hitoshi Yamanishi
  • Patent number: 5417804
    Abstract: An optical waveguide includes a substrate in the form of either a silicon substrate with a silicon oxide layer formed at its upper surface or a quartz substrate, a first waveguide layer extending over the entire upper surface of the substrate, a layer having a low refractive index and a tapered end disposed over part of an upper surface of the first waveguide layer, and a second waveguide layer of the same refractive index as that of the first waveguide layer extending over an exposed surface of the first waveguide layer and an upper surface of the layer of low refractive index.
    Type: Grant
    Filed: October 25, 1993
    Date of Patent: May 23, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Munekazu Nishihara, Youichi Ohnishi, Mikio Takebayashi
  • Patent number: 5415901
    Abstract: A laser ablation device for forming a thin film includes a vacuum chamber having a gas introduction port through which an oxidating gas is introduced into the chamber, and a light-transmittable section, a target holder disposed in the vacuum chamber for holding a target made of a film forming material of an oxide, an object holder confronting the target holder for holding an object on which the thin film is to be formed, a short wavelength laser which emits a first short wavelength laser light passing to the target in the vacuum chamber through the light-transmittable section from outside of the vacuum chamber, and a short wavelength laser light irradiating device for irradiating the object with a second short wavelength laser light passing into the vacuum chamber through the light-transmittable section from outside of the vacuum chamber. The second short wavelength laser light has an intensity lower than that of the first short wavelength laser light irradiating the target.
    Type: Grant
    Filed: June 1, 1993
    Date of Patent: May 16, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kunio Tanaka, Youichi Ohnishi, Yoshikazu Yoshida, Yukio Nishikawa
  • Patent number: 5229723
    Abstract: Disclosed is an MRI-dedicated magnetic field generating device for generating magnetic fields within an air gap, including: a pair of permanent magnet assemblies opposite to each other to form an air gap therebetween; yokes for magnetically linking the permanent magnet assemblies; and magnetic pole pieces fixed to air-gap-confronting surfaces thereof. Based on this construction, intensities of the magnetic fields are increased by disposing a plurality of magnetic material segments on the same circle or a concentric circle on the confronting surface thereof or decreased by disposing a plurality of permanent magnet segments having a magnetizing direction opposite to that of the permanent magnet assemblies on the same circle or the concentric circle on the confronting surface thereof; or alternatively both the magnetic material segments and the permanent magnet segments are disposed on the same circle or the concentric circle.
    Type: Grant
    Filed: July 9, 1990
    Date of Patent: July 20, 1993
    Assignee: Sumitomo Special Meter Co., Ltd.
    Inventors: Hideya Sakurai, Masaaki Aoki, Youichi Ohnishi
  • Patent number: 5082545
    Abstract: A sputtering apparatus to be used in reactive sputtering which mixes a reactive gas into a discharge gas so as to form chemical compound thin membranes.A heating means is provided for heating the target. Light such as infrared rays or the like, and laser beams are ideal as the heating means. A thermometer for applying light is preferable to measure the temperature of at least one portion of the target for controlling the heating condition of the target. The composition of the thin membrane to be formed by the reactive sputtering can may be made constant.
    Type: Grant
    Filed: December 14, 1989
    Date of Patent: January 21, 1992
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kunio Tanaka, Youichi Ohnishi, Masahide Yokoyama
  • Patent number: 4812712
    Abstract: A plasma processing apparatus wherein a means is provided to apply the proper negative DC voltage through a filter circuit to an electrode for generating the low-temperature plasma through the feed of the high-frequency power. When the high-frequency power has been fed in the higher high-frequency power density to the electrode for generating the low temperature plasma, the sparks (abnormal discharge) easy to be generated are prevented from being caused to generate the stable low-temperature plasma for better plasma processing.
    Type: Grant
    Filed: May 9, 1986
    Date of Patent: March 14, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Youichi Ohnishi, Akira Okuda, Hiromi Shima, Shinichi Mizuguchi
  • Patent number: 4714061
    Abstract: A motorcycle having an improved engine construction wherein the combined crankcase transmission assembly of the power plant is formed from upper and lower members that have mating faces that lie in a plane that is disposed at a downwardly extending angle in a forward direction to the horizontal. A cylinder block having a plurality of transversely spaced cylinder bores is affixed to the forward end of the upper member of the main casing and has the cylinder bores inclined at a forwardly extending angle to the vertical.
    Type: Grant
    Filed: July 29, 1985
    Date of Patent: December 22, 1987
    Assignee: Yamaha Hatsudoki Kabushiki Kaisha
    Inventors: Yoshiharu Nakayama, Youichi Ohnishi
  • Patent number: 4679022
    Abstract: A magnetic field generating device for nuclear magnetic resonance-computerized tomography of the type wherein permanent magnet assemblies of a pair opposing mutually to define an air gap therebetween are magnetically coupled together by yoke means to create a magnetic field within the air gap is provided, which is characterized in that each permanent magnet assembly comprises a flat plate-like central permanent magnet and peripheral permanent magnets arranged around the central permanent magnet and inclined toward the inside of the air gap, the magnetic pole surface of each permanent magnet assembly forms a curved concave face with respect to the air gap, and each permanent magnet is magnetized in the direction perpendicular to the corresponding magnetic pole surface, whereby the leakage flux is reduced and the magnetic efficiency is enhanced, thus, reduction of the device dimension and weight can be achieved.
    Type: Grant
    Filed: September 19, 1986
    Date of Patent: July 7, 1987
    Assignee: Sumitomo Special Metal Co. Ltd.
    Inventors: Toshinobu Miyamoto, Hiroo Hayashi, Hideya Sakurai, Hirofumi Takabayashi, Youichi Ohnishi
  • Patent number: 4672346
    Abstract: A magnetic field generating device for a nuclear magnetic resonance-computerized tomography comprising a pair of permanent magnets magnetized in the same direction with different-polarity poles opposing mutually to define an air gap, whose maximum energy product, (BH).sub.max, is not less than 30 MGOe (240 KJ/m.sup.3), on each of the opposing faces of the permanent magnets a magnetic pole segment being provided which has an annular projection and, as occasion demands, at least one central convex projection inside the annular projection, and the permanent magnets being coupled magnetically by a yoke to generate a magnetic field within the air gap.The present device is able to create a uniform and stable magnetic field, in spite of its small-sized body.
    Type: Grant
    Filed: April 4, 1985
    Date of Patent: June 9, 1987
    Assignee: Sumotomo Special Metal Co., Ltd.
    Inventors: Toshinobu Miyamoto, Hideya Sakurai, Hiroo Hayashi, Youichi Ohnishi