Abstract: A nasal-cavity model generator (41) extracts pixels having pixel density values within a specific range from three-dimensional image data on a nasal cavity of a subject contained in DICOM data (21), and generates a nasal cavity model (50), which is a three-dimensional model of the nasal cavity, based on three-dimensional image data composed of the extracted pixels. A nasal-cavity resistance calculator (42) calculates a nasal cavity resistance (51) through fluid analysis using the nasal cavity model (50) generated by the nasal-cavity model generator (41). An adjuster (43) adjusts the specific range of the pixel density values of the pixels to be extracted for generation of the nasal cavity model (50) by the nasal-cavity model generator (41) such that the nasal cavity resistance (51) calculated by the nasal-cavity resistance calculator (42) is equal to a nasal cavity resistance (52) actually measured with a nasal-cavity draft gauge.

Abstract: A nasal-cavity model generator (41) extracts pixels having pixel density values within a specific range from three-dimensional image data on a nasal cavity of a subject contained in DICOM data (21), and generates a nasal cavity model (50), which is a three-dimensional model of the nasal cavity, based on three-dimensional image data composed of the extracted pixels. A nasal-cavity resistance calculator (42) calculates a nasal cavity resistance (51) through fluid analysis using the nasal cavity model (50) generated by the nasal-cavity model generator (41). An adjuster (43) adjusts the specific range of the pixel density values of the pixels to be extracted for generation of the nasal cavity model (50) by the nasal-cavity model generator (41) such that the nasal cavity resistance (51) calculated by the nasal-cavity resistance calculator (42) is equal to a nasal cavity resistance (52) actually measured with a nasal-cavity draft gauge.

Abstract: Since the PN junction of a photodiode is formed of a silicon substrate having a low impurity concentration and an epitaxial layer, the width of the depletion layer in the PN junction is formed wider, the parasitic capacitance by the junction capacitance is lowered, and the diffusion length of the silicon substrate is formed longer. Besides, a buried layer containing a high impurity concentration is formed by a high energy ion implantation method in such a depth that the buried layer cannot be depleted by a reverse voltage applied to the PN junction, which is served as a region to lead out the anode, which accordingly results in a low parasitic resistance at the anode. Thereby, the invention provides a semiconductor device including a photodetector and a method of manufacturing the same that achieves a high photoelectric conversion sensitivity and an excellent frequency characteristic at the same time.