Abstract: A stack includes a substrate material that has a circuit surface and that is temporarily fixed on a support via a temporary fixing material. The temporary fixing material includes a temporary fixing material layer (I) that is in contact with the circuit surface of the substrate material and a temporary fixing material layer (II) that is formed on the support-facing surface of the layer (I). The temporary fixing material layer (I) is formed of a temporary fixing composition (i) that includes a thermoplastic resin (Ai), a polyfunctional (meth)acrylate compound (Bi), and a radical polymerization initiator (Ci), and the temporary fixing material layer (II) is formed of a temporary fixing composition (ii) that includes a thermoplastic resin (Aii) and a release agent (Dii).

Abstract: A method of forming a cavity between metallic wirings using a polymer capable of revealing a specific heat resistant temperature and a specific heat decomposition temperature by having a specific repeating unit structure and a specific molecular weight range and of readily forming a cavity structure between metallic wirings in, for example, semiconductors. The method comprises a step of coating the surface of a first dielectric film formed on a semiconductor substrate with a cyclic olefin based addition polymer, a step of patterning the cyclic olefin based addition polymer as a void-forming polymer, a step of forming a metallic wiring in the pattern formed on the void-forming polymer, a step of forming a second dielectric film on the void-forming polymer containing a metallic wiring, and a step of removing the void-forming polymer between the multilayered wirings by heating to form a cavity between the metallic wirings.

Abstract: A method of forming a cavity between metallic wirings using a polymer capable of revealing a specific heat resistant temperature and a specific heat decomposition temperature by having a specific repeating unit structure and a specific molecular weight range and of readily forming a cavity structure between metallic wirings in, for example, semiconductors. The method comprises a step of coating the surface of a first dielectric film formed on a semiconductor substrate with a cyclic olefin based addition polymer, a step of patterning the cyclic olefin based addition polymer as a void-forming polymer, a step of forming a metallic wiring in the pattern formed on the void-forming polymer, a step of forming a second dielectric film on the void-forming polymer containing a metallic wiring, and a step of removing the void-forming polymer between the multilayered wirings by heating to form a cavity between the metallic wirings.

Abstract: An olefin copolymer having a functional group and having a structural unit (a) derived from ethylene, a structural unit (b) derived from an &agr;-olefin having 3 to 12 carbon atoms, and a structural unit (c) derived from a cycloolefin, exhibits an intrinsic viscosity [&eegr;] of 0.1 to 10 dl/g as measured in decalin at 135° C. and can be used in a rubber composition.

Abstract: Disclosed herein are an olefin copolymer having a functional group, which comprises a structural unit (a) derived from ethylene, a structural unit (b) derived from an &agr;-olefin having 3 to 12 carbon atoms, and a structural unit (c) represented by the following general formula (1), and has an intrinsic viscosity |&eegr;| of 0.1 to 10 dl/g as measured in decalin at 135° C.