Patents by Inventor Youiti Machii

Youiti Machii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive
    Patent number: 8002860
    Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
    Type: Grant
    Filed: June 15, 2009
    Date of Patent: August 23, 2011
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Naoyuki Koyama, Kouji Haga, Masato Yoshida, Keizou Hirai, Toranosuke Ashizawa, Youiti Machii
  • CMP ABRASIVE, METHOD FOR POLISHING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR CMP ABRASIVE
    Publication number: 20090253355
    Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
    Type: Application
    Filed: June 15, 2009
    Publication date: October 8, 2009
    Inventors: Naoyuki Koyama, Kouji Haga, Masato Yoshida, Keizou Hirai, Toranosuke Ashizawa, Youiti Machii
  • Abrasive compound for CMP, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive compound
    Patent number: 7410409
    Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
    Type: Grant
    Filed: June 15, 2000
    Date of Patent: August 12, 2008
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Naoyuki Koyama, Kouji Haga, Masato Yoshida, Keizou Hirai, Toranosuke Ashizawa, Youiti Machii
  • CMP abrasive, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive
    Publication number: 20070169421
    Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
    Type: Application
    Filed: March 23, 2007
    Publication date: July 26, 2007
    Inventors: Naoyuki Koyama, Kouji Haga, Masato Yoshida, Keizou Hirai, Toranosuke Ashizawa, Youiti Machii