Abstract: Provided is a heat-resistant resin paste excellent in heat resistance, flexibility, printability and viewability. A heat-resistant resin paste containing a first organic solvent (A1), a second organic solvent (A2) containing a lactone, a heat-resistant resin (B) soluble in a mixed solvent of the solvents (A1) and (A2), a heat-resistant resin filler (C) insoluble in the mixed organic solvent of the solvents (A1) and (A2), and a pigment (D), wherein the components (C) and (D) are dispersed in a solution containing the solvents (A1) and (A2) and the component (B).

Abstract: There is provided an adhesive film for a semiconductor, which can be attached to a semiconductor wafer at low temperature and which allows semiconductor chips to be obtained at high yield from the semiconductor wafer while sufficiently inhibiting generation of chip cracks and burrs. The adhesive film for a semiconductor comprises a polyimide resin that can be obtained by reaction between a tetracarboxylic dianhydride containing 4,4?-oxydiphthalic dianhydride represented by chemical formula (I) below and a diamine containing a siloxanediamine represented by the following general formula (II) below, and that can be attached to a semiconductor wafer at 100° C. or below.

Abstract: There is an adhesive film for a semiconductor for use in a method for manufacturing a semiconductor chip. The method includes preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5%, and the tensile breaking elongation is less than 110% of the elongation at maximum load. The semiconductor wafer is partitioned into multiple semiconductor chips and notches are formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction. The method also includes stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches.

Abstract: There is provided a method that allows semiconductor chips to be obtained from a semiconductor wafer at high yield, while sufficiently inhibiting generation of chip cracks and burrs. The method for manufacturing a semiconductor chip comprises a step of preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order, the semiconductor wafer being partitioned into multiple semiconductor chips and notches being formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction, and a step of stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5% and the tensile breaking elongation of less than 110% of the elongation at maximum load.

Abstract: A double-faced adhesive film including: a supporting film; a first adhesive layer laminated on one surface of the supporting film; and a second adhesive layer laminated on the other surface of the supporting film, wherein the glass transition temperatures, after curing, of the first adhesive layer and the second adhesive layer are each 100° C. or lower, and the first adhesive layer and the second adhesive layer are the layers capable of being formed by a method including the steps of directly applying a varnish to the supporting film and drying the applied varnish.

Abstract: There is provided a method that allows semiconductor chips to be obtained from a semiconductor wafer at high yield, while sufficiently inhibiting generation of chip cracks and burrs. The method for manufacturing a semiconductor chip comprises a step of preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order, the semiconductor wafer being partitioned into multiple semiconductor chips and notches being formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction, and a step of stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5% and the tensile breaking elongation of less than 110% of the elongation at maximum load.

Abstract: There is provided an adhesive film for a semiconductor, which can be attached to a semiconductor wafer at low temperature and which allows semiconductor chips to be obtained at high yield from the semiconductor wafer while sufficiently inhibiting generation of chip cracks and burrs. The adhesive film for a semiconductor comprises a polyimide resin that can be obtained by reaction between a tetracarboxylic dianhydride containing 4,4?-oxydiphthalic dianhydride represented by chemical formula (I) below and a diamine containing a siloxanediamine represented by the following general formula (II) below, and that can be attached to a semiconductor wafer at 100° C. or below.

Abstract: Provided is a heat-resistant resin paste excellent in heat resistance, flexibility, printability and viewability. A heat-resistant resin paste containing a first organic solvent (A1), a second organic solvent (A2) containing a lactone, a heat-resistant resin (B) soluble in a mixed solvent of the solvents (A1) and (A2), a heat-resistant resin filler (C) insoluble in the mixed organic solvent of the solvents (A1) and (A2), and a pigment (D), wherein the components (C) and (D) are dispersed in a solution containing the solvents (A1) and (A2) and the component (B).