Abstract: Disclosed are (1) an aqueous coating composition which is characterized in that the composition comprises:(A) an acrylic resin-type emulsion,(B) a urethane resin-type emulsion and(C) a crosslinking agentthe component (B) being a self-emulsifiable urethane emulsion prepard by subjecting a urethane prepolymer to reaction for chain extension by water and to emulsification after or during neutralization of the urethane prepolymer with a tertiary amine, the urethane prepolymer consisting essentially of (i) an aliphatic and/or alicyclic diisocyanate, (ii) a polyether diol and/or polyester diol both having a number-average molecular weight of about 500 to about 5000, (iii) a low-molecular weight polyhydroxyl compound and (iv) a dimethylolalkanoic acid in an NCO/OH ratio by equivalent of 1.1-1.9/1; and (2) a two-coat one-bake coating method characterized by use of said aqueous coating composition as the base-coat composition.

Abstract: An adhesive composition comprises (A) an acrylic copolymer having NCO-reactive groups, (B) a blocked polyisocyanate and (C) a cycloamidine or acid addition salt thereof, as catalyst. The composition can be applied by hot-melt coating. Cured products from the composition are useful as pressure-sensitive adhesives.

Abstract: A silicon crystal body having a major surface lying parallel to a {110} or {100} crystal plane is prepared. A silicon oxide film is formed on the major surface by heating the body in an atmosphere containing steam. Then, an aluminum layer is formed on the oxide film. Thereby the amount of surface donors induced in the major surface of the body by the existence of the oxide film is smaller than the amount of induced surface donors to be obtained in a crystal plane of a like silicon body but lying parallel to a {111} plane covered with a like oxide film. The amount of induced surface donors is further reduced by subjecting said body to a heat treatment under application across said oxide film of such a voltage as that which renders the aluminum layer provided on the oxide film negative polarity. This invention is applied to the manufacture of, for example, MOS field effect transistors, MOS diodes and so-called planar transistors.