Abstract: A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (4) in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate (1) side of the microcrystalline silicon layer (4), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate (1).

Abstract: A thin-film inspection apparatus calculates a film thickness of a first transparent thin film and a second transparent thin film of an inspection-target substrate including the first and second transparent thin films and a transparent conductive film on a transparent glass substrate.

Abstract: A thin-film inspection apparatus includes a storage section (14) that stores at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum that are affected by a variation in the film thickness of at least one of a first transparent thin film and a second transparent thin film are each associated with the film thickness of the first transparent thin film and the film thickness of the second transparent thin film; a light irradiation section (11) that irradiates an inspection-target substrate (S) with white light through a transparent glass substrate; a light receiving section (12) that receives reflected light reflected from the inspection-target substrate (S); and an arithmetic section (15) that obtains measurement values of the feature values stored in the storage section (14) from a spectral reflectance spectrum generated based on the received reflected light and that calculates the film thickness of each of the first transpa

Abstract: A photoelectric conversion apparatus (100) having a photovoltaic layer (3) comprising a crystalline silicon i-layer (42) formed on a large surface area substrate (1) of not less than 1 m2, wherein the crystalline silicon i-layer comprises regions in which the Raman peak ratio, which is the ratio, within the substrate (1) plane, of the Raman peak intensity of the crystalline silicon phase relative to the Raman peak intensity of the amorphous silicon phase, is within a range from not less then 3.5 to not more than 8.0, and the surface area proportion for those regions within the substrate (1) plane having a Raman peak ratio of not more than 2.5 is not more than 3%.

Abstract: An object of the present invention is to provide a photovoltaic device and a process for producing such a photovoltaic device that enable a stable, high photovoltaic conversion efficiency to be achieved by using a transparent electrode having an optimal relationship between the resistivity and the transmittance. At least one transparent electrode (12, 16) is either a ZnO layer containing no Ga or a Ga-doped ZnO layer in which the quantity of added Ga is not more than 5 atomic % relative to the Zn within the ZnO layer, and the ZnO layer is formed by a sputtering method using a rare gas containing added oxygen as the sputtering gas, wherein the quantity of oxygen added to the sputtering gas is not less than 0.1% by volume and not more than 5% by volume relative to the combined volume of the oxygen and the rare gas.

Abstract: A process for producing a photovoltaic device having a high conversion efficiency with improved productivity. The process for producing a photovoltaic device includes an n-layer formation step of depositing an n-layer composed of crystalline silicon on a substrate disposed inside a deposition chamber under reduced pressure conditions by heating the substrate with a heating device to convert the substrate to a heated state, supplying a raw material gas to the inside of the deposition chamber, and then supplying power to a discharge electrode positioned opposing the substrate, wherein the n-layer formation step comprises depositing the n-layer with the pressure inside the deposition chamber set to not less than 500 Pa and not more than 1,000 Pa, and the distance between the substrate and the discharge electrode set to not less than 6 mm and not more than 12 mm.

Abstract: The object of the present invention is the reduction of memory capacity in a multi-body problem processing apparatus. In a parameter storing method in multi-body problem processing for performing a molecular dynamics calculation for a plurality of particles existing in a three-dimensional space, parameters required to calculate a nonassociative force acting between particles subjected to the calculation are stored in a storage device and correspond to a combination of the particles subjected to the calculation.

Abstract: A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (4) in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate (1) side of the microcrystalline silicon layer (4), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate (1).

Abstract: A photovoltaic device and a process for producing the photovoltaic device that combine a high photovoltaic conversion efficiency with a high level of productivity. The photovoltaic device includes at least a transparent electrode-bearing substrate, prepared by providing a transparent electrode layer on a transparent, electrically insulating substrate, and a photovoltaic layer containing mainly crystalline silicon-based semiconductors and a back electrode layer formed sequentially on the transparent electrode layer of the transparent electrode-bearing substrate, wherein the surface of the transparent electrode layer of the transparent electrode-bearing substrate has a shape that contains a mixture of coarse and fine roughness, and exhibits a spectral haze ratio of 20% or greater for wavelengths of from 550 nm to 800 nm, and the photovoltaic layer containing mainly crystalline silicon-based semiconductors has a film thickness of from 1.2 ?m to 2 ?m, and a Raman ratio of from 3.0 to 8.0.

Abstract: The efficiency of a thin film Si solar battery is improved. Between a back face electrode and a transparent conductive film provided on a front face side of the back face electrode, a refractive index adjustment layer is interposed made from a material that has a lower refractive index than that of the transparent conductive film. For example when the transparent conductive film is GZO, SiO2 is interposed between the transparent conductive film and the back face electrode made from Ag. As a result light that penetrates into and is absorbed at the back face electrode is reduced, and the reflectivity of light at the back face electrode is improved.

Abstract: The object of the present invention is the reduction of memory capacity in a multi-body problem processing apparatus. In a parameter storing method in multi-body problem processing for performing a molecular dynamics calculation for a plurality of particles existing in a three-dimensional space, parameters required to calculate a nonassociative force acting between particles subjected to the calculation are stored in a storage device and correspond to a combination of the particles subjected to the calculation.

Abstract: A thin-film solar cell of a tandem type includes a first conductive layer formed on a transparent substrate to which a sun light is input; a top solar cell layer formed on the first conductive layer; and a bottom solar cell layer laminated on the top solar cell layer to be connected with the top solar cell in series. A total generation electric current of the thin-film solar cell layer is determined based on a generation electric current of the bottom solar cell layer.

Abstract: A tandem thin film solar cell is composed of a first conductive layer formed on a transparent substrate; a first solar cell layer formed on the first conductive layer; and a second solar cell layer covering the first solar cell layer. The first conductive layer has surface irregularity, a pitch of the surface irregularity being in a range of 0.2 to 2.5 ?m, and an amplitude of the surface irregularity being in a range of one-fourth to half of the pitch of the surface irregularity.

Abstract: A photovoltaic device is formed by depositing at least a first transparent electrode, PIN-structured or NIP-structured microcrystalline silicon layers, a second transparent electrode, and a back electrode in sequence on an electrically insulating transparent substrate. The PIN-structured or NIP-structured microcrystalline silicon layers include a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer. At least one of the first transparent electrode and the second transparent electrode is a ZnO layer doped with Ga, and the Ga concentration is 15 atomic percent or less with respect to Zn.

Abstract: A pack seal apparatus formed with a first rigid ring having a radial leg portion and an axial leg portion in an L-shaped cross section, a second rigid ring having a radial leg portion and an axial leg portion in an L-shaped cross section, the first and second rings being coaxially arranged to be rotatable with respect to each other, a first elastic annular seal member secured to the radial leg portion of the first ring so as to be sealingly and slidingly engaged with the axial leg portion of the second ring, a second elastic annular seal member secured to the radial leg portion of the second ring so as to be sealingly and slidingly engaged with the axial leg portion of the first ring; the axial and radial leg portions of the first ring, the axial and radial leg portions of the second ring, and the first and second elastic annular seal members cooperating to define a closed annular space, and a pulser ring made of a separate thin metal plate mounted on the radial leg portion of one of the first and second ring

Abstract: A bearing having a passive pulser ring which is provided axially adjacent to the frame substantially L-shaped in cross section, specifically the radially extending flange support section, and the cylindrical support section is provided between the outer and inner rings to provide precise parallelism and axial positioning.