Abstract: Switching is performed between a global shutter method and a local shutter method. A pixel control unit 30 performs local shutter and global shutter on a pixel. The image generation unit 40 generates a first frame, which is an image based on the first image signal, and a second frame, which is an image based on the second image signal. The self-position estimation unit 50 generates a surrounding map from the first frame. The object detection unit 60 detects a target object from the second frame and generates target object information.

Abstract: Provided are an equol determination kit that selectively determines equol with high sensitivity by surface-enhanced Raman scattering, and a method for selectively determining equol with high sensitivity by surface-enhanced Raman scattering. The equol determination kit of the present disclosure determines equol by the surface-enhanced Raman scattering spectroscopy. The method for determination of equol of the present disclosure is a method for determination of equol by the surface-enhanced Raman scattering spectroscopy. In the method, equol is preferably determined by analyzing a peak found in at least one wavelength region selected from the group consisting of 1530 to 1630 cm?1, 1230 to 1330 cm?1, 1140 to 1240 cm?1, and 535 to 635 cm?1.

Abstract: To yield a high-purity 1,3-butylene glycol product that is colorless and odorless (or almost colorless and odorless) and unlikely to cause or increase coloration and odor over time. A 1,3-butylene glycol product containing 1,3-butylene glycol, wherein a sum of contents of acetaldehyde, crotonaldehyde, methyl vinyl ketone, acetone, formaldehyde, butylaldehyde, acetaldol, 1-hydroxy-3-butanone, 2-butanol and compounds represented by Formulas (1) to (10) below is less than 65 ppm.

Abstract: The present invention provides a solvent composition for use in an ink for producing an electronic device using a printing method, the solvent composition being capable of improving the printing accuracy of the ink, being fired at low temperatures, and suppressing the amount of ash remaining after firing to a very low amount. The solvent composition for electronic device production of the present invention is for use in an ink for producing an electronic device by a printing method, and contains a miscible product of: a solvent and a compound represented by Formula (1) below. In Formula (1), R represents the same or different aliphatic hydrocarbon groups having 1 or more carbon atoms.

Abstract: The present invention provides a solvent composition for use in an ink for producing an electronic device using a printing method, the solvent composition being capable of improving the printing accuracy of the ink, being fired at low temperatures, and suppressing the amount of ash remaining after firing to a very low amount. The solvent composition for electronic device production of the present invention is for use in an ink for producing an electronic device by a printing method, and contains a miscible product of: a solvent and a compound represented by Formula (1) below. In Formula (1), R represents the same or different aliphatic hydrocarbon groups having 1 or more carbon atoms.

Abstract: Provided is a compound that thickens a fluid organic material to a desired viscosity and uniformly stabilizes composition thereof. A compound of the present invention is represented by Formula (1): where R1 represents a monovalent linear aliphatic hydrocarbon group having from 10 to 25 carbons; R2 and R3 are the same or different, representing a divalent aliphatic hydrocarbon group having 2, 4, 6, or 8 carbons, a divalent alicyclic hydrocarbon group having 6 carbons, or a divalent aromatic hydrocarbon group; R4 represents a divalent aliphatic hydrocarbon group having from 1 to 8 carbon(s); R5 and R6 are the same or different, representing a monovalent aliphatic hydrocarbon group having from 1 to 3 carbon(s) or a hydroxyalkylether group L1 to L3 represent an amide bond; in a case where L1 and L3 are —CONH—, L2 is —NHCO—, and in a case where L1 and L3 are —NHCO—, L2 is —CONH—.

Abstract: Provided is a composition for manufacturing an organic semiconductor device, the composition enabling formation of an organic semiconductor device that stably shows high carrier mobility. A composition for manufacturing an organic semiconductor device contains 2,3-dihydrobenzofuran as a solvent and an organic semiconductor material below, in which the water content of the solvent is 0.25 wt % or less. The organic semiconductor material: at least one compound selected from the group consisting of a compound represented by formula (1-1), a compound represented by formula (1-2), a compound represented by formula (1-3), a compound represented by formula (1-4), a compound represented by formula (1-5), and a compound represented by formula (1-6).

Abstract: Provided is a solvent for organic transistor production. The solvent has excellent solubility for organic semiconductor materials and enables formation of an organic transistor having high crystallinity. The solvent according to the present invention for organic transistor production includes a solvent A represented by Formula (a). In the formula, Ring Z represents a ring selected from an aromatic carbon ring, a 5- to 7-membered alicyclic carbon ring, and a 5- to 7-membered heterocyclic ring; R1 represents a group selected from oxo, thioxy, —ORa, —SRa, —O(C?O)Ra, —RbO(C?O)Ra, and substituted or unsubstituted amino; and R2 represents a group selected from hydrogen, C1-C7 alkyl, aryl, and —ORa, where R1 and R2 may be linked to each other to form a ring with one or more carbon atoms constituting Ring Z.

Abstract: Solvent or solvent composition for organic transistor production, which is excellent in solubility of an organic semiconductor material, and which can form an organic transistor high in crystallinity. The solvent or solvent composition for organic transistor is a solvent or solvent composition for organic semiconductor material dissolution, and includes a solvent ‘A’ represented by the formula (R1)N(R2)—C(?O)—(R3)N(R4) wherein R1 to R4 are the same or different, and each represents a C1-2 alkyl group, or R1 and R4 may be bound to one another to form a ring together with the —N(R2)—C(?O)—N(R3)— moiety as well as an organic semiconductor material.

Abstract: Provided is an insulating coating composition. The composition is highly safe, in which an organic material to form an insulating film is dissolved highly stably. The composition can form an insulating film by coating, where the insulating film has a low relative permittivity, a high insulation resistance, and high wettability and allows an upper layer to be formed thereon by coating. The insulating coating composition according to the present invention contains a cyclic olefin copolymer and a solvent. The cyclic olefin copolymer is a copolymer between a cyclic olefin and a chain olefin. The solvent includes a compound represented by Formula (1) and having a normal boiling point of 100° C. to lower than 300° C. In Formula (1), Ring Z is a ring selected from a 5- or 6-membered saturated or unsaturated cyclic hydrocarbon and a benzene ring; and R1 is selected from a hydrocarbon group and acyl. Ring Z has a substituent or substituents including the R1O group.

Abstract: Provided is a composition for manufacturing an organic semiconductor device, the composition enabling formation of an organic semiconductor device that stably shows high carrier mobility. A composition for manufacturing an organic semiconductor device contains 2,3-dihydrobenzofuran as a solvent and an organic semiconductor material below, in which the water content of the solvent is 0.25 wt % or less. The organic semiconductor material: at least one compound selected from the group consisting of a compound represented by formula (1-1), a compound represented by formula (1-2), a compound represented by formula (1-3), a compound represented by formula (1-4), a compound represented by formula (1-5), and a compound represented by formula (1-6).

Abstract: There is provided a composition being excellent in the dissolvability of an organic semiconductor material and being capable of forming an organic semiconductor device having a high carrier mobility by using a printing method under a low-temperature environment. The composition for producing an organic semiconductor device according to the present invention comprises an organic semiconductor material and solvent (A). The organic semiconductor material is an N-shaped fused-ring n-conjugated molecule; and solvent (A) is a compound represented by formula (a). In the formula, L represents a single bond, —O—, —NH—C(?O)—NH—, —C(?O)—, or —C(?S)—; k represents an integer of 0 to 2; R1 represents a group selected from C1-20 alkyl, C2-20 alkenyl, C3-20 cycloalkyl, —ORa, —SRa, —O(C?O)Ra, —RbO(C?O)Ra or substituted or unsubstituted amino; and t represents an integer of 1 or more.

Abstract: Provided is an insulating coating composition. The composition is highly safe, in which an organic material to form an insulating film is dissolved highly stably. The composition can form an insulating film by coating, where the insulating film has a low relative permittivity, a high insulation resistance, and high wettability and allows an upper layer to be formed thereon by coating. The insulating coating composition according to the present invention contains a cyclic olefin copolymer and a solvent. The cyclic olefin copolymer is a copolymer between a cyclic olefin and a chain olefin. The solvent includes a compound represented by Formula (1) and having a normal boiling point of 100° C. to lower than 300° C. In Formula (1), Ring Z is a ring selected from a 5- or 6-membered saturated or unsaturated cyclic hydrocarbon and a benzene ring; and R1 is selected from a hydrocarbon group and acyl. Ring Z has a substituent or substituents including the R1O group.

Abstract: A method for producing a copolymer for semiconductor lithography containing less metal impurities, and a method for purifying a polymerization initiator for production of the copolymer, are provided. The method for purifying a polymerization initiator to be used for production of a polymer includes a filtering step wherein a solution of a polymerization initiator dissolved in an organic solvent is allowed to pass through a filter having a nominal pore size of not more than 1.0 ?m, to reduce the sodium content of the polymerization initiator solution to not more than 300 ppb with respect to the weight of the polymerization initiator. Further, the method for producing a copolymer for semiconductor lithography includes a polymerization step wherein the polymer for semiconductor lithography is synthesized by a radical polymerization reaction in the presence of a polymerization initiator purified by the above purification method.

Abstract: Provided is a solvent for organic transistor production. The solvent has excellent solubility for organic semiconductor materials and enables formation of an organic transistor having high crystallinity. The solvent according to the present invention for organic transistor production includes a solvent A represented by Formula (a). In the formula, Ring Z represents a ring selected from an aromatic carbon ring, a 5- to 7-membered alicyclic carbon ring, and a 5- to 7-membered heterocyclic ring; R1 represents a group selected from oxo, thioxy, —ORa, —SRa, —O(C?O)Ra, —RbO(C?O)Ra, and substituted or unsubstituted amino; and R2 represents a group selected from hydrogen, C1-C7 alkyl, aryl, and —ORa, where R1 and R2 may be linked to each other to form a ring with one or more carbon atoms constituting Ring Z.

Abstract: A method for producing a copolymer for semiconductor lithography containing less metal impurities, and a method for purifying a polymerization initiator for production of the copolymer, are provided. The method for purifying a polymerization initiator to be used for production of a polymer includes a filtering step wherein a solution of a polymerization initiator dissolved in an organic solvent is allowed to pass through a filter having a nominal pore size of not more than 1.0 ?m, to reduce the sodium content of the polymerization initiator solution to not more than 300 ppb with respect to the weight of the polymerization initiator. Further, the method for producing a copolymer for semiconductor lithography includes a polymerization step wherein the polymer for semiconductor lithography is synthesized by a radical polymerization reaction in the presence of a polymerization initiator purified by the above purification method.

Abstract: A method for producing a copolymer for semiconductor lithography containing less metal impurities, and a method for purifying a polymerization initiator for production of the copolymer, are provided. The method for purifying a polymerization initiator to be used for production of a polymer includes a filtering step wherein a solution of a polymerization initiator dissolved in an organic solvent is allowed to pass through a filter having a nominal pore size of not more than 1.0 ?m, to reduce the sodium content of the polymerization initiator solution to not more than 300 ppb with respect to the weight of the polymerization initiator. Further, the method for producing a copolymer for semiconductor lithography includes a polymerization step wherein the polymer for semiconductor lithography is synthesized by a radical polymerization reaction in the presence of a polymerization initiator purified by the above purification method.

Abstract: Provided is a solvent or solvent composition for organic transistor production. The solvent or solvent composition allows an organic semiconductor material to dissolve therein with high solubility and can form a highly crystalline organic transistor. The solvent or solvent composition for organic transistor production according to the present invention is a solvent or solvent composition for dissolution of an organic semiconductor material and includes a solvent A represented by Formula (A). In Formula (A), R1 is selected from C1-C4 alkyl, C1-C4 acyl, a C5-C6 cycloalkane ring, a C5-C6 cycloalkene ring, C6-C12 aryl, and a group including two or more of them bonded to each other. R2, R3, R4, and R5 are, identically or differently in each occurrence, selected from hydrogen, C1-C4 alkyl, and C1-C4 acyl. R6 is selected from C1-C4 alkyl and C1-C4 acyl. R1 and R3 may be linked to each other to form a ring with the adjacent oxygen atom and carbon atom; n represents 1 or 2; and m represents an integer from 0 to 2.

Abstract: Provided is a solvent or solvent composition for organic transistor production that is excellent in solubility of an organic semiconductor material and that can form an organic transistor high in crystallinity. The solvent or solvent composition for organic transistor production according to the present invention is a solvent or solvent composition for organic semiconductor material dissolution, including a solvent A represented by the following formula (A). In the formula (A), R1 to R4 are the same or different, and represent a C1-2 alkyl group. R1 and R4 may be bound to each other to form a ring together with —N(R2)—C(?O)—N(R3)— in the formula.

Abstract: A method for producing a copolymer for semiconductor lithography containing less metal impurities, and a method for purifying a polymerization initiator for production of the copolymer, are provided. The method for purifying a polymerization initiator to be used for production of a polymer includes a filtering step wherein a solution of a polymerization initiator dissolved in an organic solvent is allowed to pass through a filter having a nominal pore size of not more than 1.0 ?m, to reduce the sodium content of the polymerization initiator solution to not more than 300 ppb with respect to the weight of the polymerization initiator. Further, the method for producing a copolymer for semiconductor lithography includes a polymerization step wherein the polymer for semiconductor lithography is synthesized by a radical polymerization reaction in the presence of a polymerization initiator purified by the above purification method.