Abstract: The present invention relates to a composition for preventing or treating cellular senescence-associated diseases comprising homoharringtonine as an active ingredient, and it was confirmed that the composition comprising homoharringtonine as an active ingredient exhibits a senolytics effect of selectively killing aging-induced fibroblasts and renal tubular cells, whereas aging-induced vascular endothelial cells and epithelial melanocytes and retinal pigmented epithelial cells, and exhibits a senomorphics effect of restoring the function and morphology of cells, and thus the homoharringtonine acts differently depending on the type of cells to effectively prevent or treat senile eye disease, tissue fibrosis disease, atherosclerosis, osteoarthritis, degenerative brain disease, chronic skin damage, obesity and diabetes caused by cellular aging and can be provided as a composition for whitening skin and life extension.

Abstract: Provided is an apparatus and method for predicting the remaining lifetime of an environment data collection sensor in a livestock house. The method for predicting the remaining lifetime of an environment data collection sensor in a livestock house includes (a) collecting livestock house environment information, (b) detecting an error of a sensor from the collected livestock house environment information, (c) generating a dataset for learning, (d) generating a sensor lifetime prediction model to performing learning, and (e) predicting a lifetime of the sensor using a result of the learning.

Abstract: A variable resistance memory device includes a memory unit including a first electrode, a variable resistance pattern and a second electrode sequentially stacked on a substrate, a first selection structure on the memory unit, a third electrode structure on the first selection structure, and an anti-fuse including a fourth electrode, a second selection structure and a fifth electrode structure sequentially stacked. The fourth electrode directly contacts the second selection structure, and a bottom of the fourth electrode is lower than a bottom of the second electrode.

Abstract: A variable resistance memory device includes: a substrate including a peripheral region and a core region, the core region including a far region spaced apart from the peripheral region and a near region between the far region and the peripheral region; first conductive lines disposed on the substrate and extending in a first direction; second conductive lines disposed on the first conductive lines and extending in a second direction intersecting the first direction, and memory cells disposed between the first and second conductive lines on the core region. The memory cells include a near memory cell disposed on the near region, and a far memory cell disposed on the far region, wherein a resistance or threshold voltage of the near memory cell, controlling connection of each of the memory cells to a corresponding one of the second conductive lines, is different from that of the far memory cell.

Abstract: A variable resistance memory device includes a memory unit including a first electrode, a variable resistance pattern and a second electrode sequentially stacked on a substrate, a first selection structure on the memory unit, a third electrode structure on the first selection structure, and an anti-fuse including a fourth electrode, a second selection structure and a fifth electrode structure sequentially stacked. The fourth electrode directly contacts the second selection structure, and a bottom of the fourth electrode is lower than a bottom of the second electrode.

Abstract: A variable resistance memory device includes: a substrate including a peripheral region and a core region, the core region including a far region spaced apart from the peripheral region and a near region between the far region and the peripheral region; first conductive lines disposed on the substrate and extending in a first direction; second conductive lines disposed on the first conductive lines and extending in a second direction intersecting the first direction, and memory cells disposed between the first and second conductive lines on the core region. The memory cells include a near memory cell disposed on the near region, and a far memory cell disposed on the far region, wherein a resistance or threshold voltage of the near memory cell, controlling connection of each of the memory cells to a corresponding one of the second conductive lines, is different from that of the far memory cell.