Abstract: A substrate transfer apparatus including: a chamber; a carrier with a first concave portion facing the chamber and extending in a first direction, positioned vertically in a second direction intersecting the first direction while securing a substrate, and capable of being introduced into or removed from the chamber in the first direction; roller components in the chamber, positioned in the first concave portion; linear movable components in the chamber; first magnet components in the carrier, facing the linear movable components in the second direction; second magnet components in the chamber, opposite the first magnet components in the second direction; and third magnet components in the carrier, facing the second magnet components, wherein the carrier is transferred while maintaining a gap between the linear movable components and first magnet components, facilitated by a magnetic force between the second and third magnet components.

Abstract: A display panel includes an insulating layer, a pixel defining film which is arranged on the insulating layer and in which an opening is defined, a pixel electrode having at least a portion exposed through the opening, an emission layer arranged on the pixel electrode, an electron control layer arranged on the emission layer, and a transparent electrode arranged on the electron control layer and including gallium. The display panel further includes at least one of a metal oxide layer arranged on the transparent electrode, or an auxiliary metal layer arranged on the pixel defining film.

Abstract: A method for cleaning a sputtering apparatus includes removing a portion of a first material deposited in the sputtering apparatus, and oxidizing a remaining portion of the first material deposited in the sputtering apparatus after the removing the portion of the first material deposited in the sputtering apparatus. The sputtering apparatus includes a process chamber which provides a process space, a stage within the process space, a discharge tube which provides a plasma discharge space extended to the process space, and a radio frequency (“RF”) coil which wraps the discharge tube. The oxidizing the remaining portion of the first material deposited in the sputtering apparatus includes supplying an oxygen gas to the plasma discharge space.

Abstract: An in-line manufacturing apparatus includes a carrier that transports a substrate, a plurality of process chambers subjected to a manufacturing process on the substrate transported through the carrier, and a cooling part disposed adjacent to the carrier and movable with the carrier.

Abstract: A deposition apparatus includes: a susceptor provided with a plurality of susceptor holes defined therein; an electrostatic chuck disposed on the susceptor and provided with a plurality of electrostatic chuck holes defined therein; and a plurality of pins penetrating through the susceptor and the electrostatic chuck to connect the susceptor and the electrostatic chuck. Each of the pins includes a first portion disposed in a corresponding electrostatic chuck hole of the plurality of electrostatic chuck holes and a second portion disposed in a corresponding susceptor hole of the plurality of susceptor holes. The first portion includes a first base portion and a first cooler disposed in the first base portion.

Abstract: A sputtering apparatus includes: a chamber; a target disposed inside the chamber; a coil disposed adjacent to the target; a moving member on which the coil is disposed, where the moving member adjusts a position of the coil; and a coil shield disposed inside the chamber to overlap the coil. An opening is defined in the coil shield.

Abstract: A sputtering apparatus includes: a first cylindrical target and a second cylindrical target, which are arranged in a first direction and parallel to each other; a first magnet disposed in the first cylindrical target; a second magnet disposed in the second cylindrical target; and a substrate holder spaced apart from the first and second cylindrical targets in a second direction which is perpendicular to the first direction, wherein each of a first angle formed by a first imaginary straight line from a center of the first magnet to a cylindrical axis of the first cylindrical target with a first perpendicular line and a second angle formed by a second imaginary straight line from a center to of the second magnet to a cylindrical axis of the second cylindrical target with a second perpendicular line is in a range of about 30 degrees to about 180 degrees.

Abstract: A sputtering apparatus includes: a first cylindrical target and a second cylindrical target, which are arranged in a first direction and parallel to each other; a first magnet disposed in the first cylindrical target; a second magnet disposed in the second cylindrical target; and a substrate holder spaced apart from the first and second cylindrical targets in a second direction which is perpendicular to the first direction, wherein each of a first angle formed by a first imaginary straight line from a center of the first magnet to a cylindrical axis of the first cylindrical target with a first perpendicular line and a second angle formed by a second imaginary straight line from a center to of the second magnet to a cylindrical axis of the second cylindrical target with a second perpendicular line is in a range of about 30 degrees to about 180 degrees.

Abstract: An in-line manufacturing apparatus includes a carrier that transports a substrate, a plurality of process chambers subjected to a manufacturing process on the substrate transported through the carrier, and a cooling part disposed adjacent to the carrier and movable with the carrier.

Abstract: A deposition apparatus includes: a susceptor provided with a plurality of susceptor holes defined therein; an electrostatic chuck disposed on the susceptor and provided with a plurality of electrostatic chuck holes defined therein; and a plurality of pins penetrating through the susceptor and the electrostatic chuck to connect the susceptor and the electrostatic chuck. Each of the pins includes a first portion disposed in a corresponding electrostatic chuck hole of the plurality of electrostatic chuck holes and a second portion disposed in a corresponding susceptor hole of the plurality of susceptor holes. The first portion includes a first base portion and a first cooler disposed in the first base portion.

Abstract: A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/m2 or more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.

Abstract: A thin film deposition apparatus includes a process chamber that includes a reaction space, a plasma generating unit, and a sputtering unit. The plasma generating unit generates a plasma in the reaction space. The sputtering unit is independently driven from the plasma generating unit to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma.