Abstract: A sensor pixel circuit may include: a photodiode to which a current flows according to incident light; a storage capacitor connected in parallel to the photodiode; a first transistor for connecting a bias voltage and the photodiode by a contact of a recognition object; and a second transistor for transmitting charges stored in the storage capacitor to a data line.

Abstract: A sensor pixel according to a feature of the present invention includes: a detection electrode that forms capacitance with a recognition target; and a sensor pixel circuit that is connected to the detection electrode, generates a detection signal by using the detection electrode, and to which a DC voltage for resetting is supplied, wherein a coupling pulse is periodically applied to the recognition target that forms the capacitance with the detection electrode, and the detection signal may be changed according to the coupling pulse.

Abstract: A sensor pixel circuit may include: a photodiode to which a current flows according to incident light; a storage capacitor connected in parallel to the photodiode; a first transistor for connecting a bias voltage and the photodiode by a contact of a recognition object; and a second transistor for transmitting charges stored in the storage capacitor to a data line.

Abstract: A sensor pixel according to a feature of the present invention includes: a detection electrode that forms capacitance with a recognition target; and a sensor pixel circuit that is connected to the detection electrode, generates a detection signal by using the detection electrode, and to which a DC voltage for resetting is supplied, wherein a coupling pulse is periodically applied to the recognition target that forms the capacitance with the detection electrode, and the detection signal may be changed according to the coupling pulse.

Abstract: A fingerprint recognition sensor according to an exemplary embodiment of the present invention includes: a photo sensor for sensing light that is diffuse-reflected from a finger of a user and incident on the photo sensor, or that is transmitted through the finger and incident on the photo sensor; a first matrix positioned on the photo sensor and including a first opening; a second matrix positioned on the first matrix and including a second opening; and a cover layer including one surface contacting the finger and positioned on the second matrix, wherein, from among light that is diffuse-reflected from the finger and incident on the cover layer or that is transmitted through the finger and incident on the cover layer, light having an angle, formed by a normal line on the one surface of the cover layer and a path of the light incident on the cover layer, that is greater than a critical angle, sequentially passes through the second opening and the first opening and is incident on the photo sensor.

Abstract: A smart card according to an exemplary embodiment of the present invention includes: a transparent substrate including a side contacting a finger of a user; a reflection layer separated from the transparent substrate, facing the transparent substrate, and including a metal material; a photosensor provided between the transparent substrate and the reflection layer, and sensing light reflected and input from the reflection layer; and a card substrate including an opaque material and covering the reflection layer.

Abstract: A fingerprint and image sensor includes a plurality of data lines, a plurality of scan lines, to which a plurality of scan signals is transferred, a plurality of reset scan lines, to which a plurality of reset scan signals is transferred, and a sensor panel, which is reset by a reset voltage, which is synchronized to a corresponding reset scan signal and is transferred, generates a pixel voltage according to light supplied during an exposure period, and includes a plurality of sensor pixels, which is synchronized to a corresponding scan signal and transfers the pixel voltage to a corresponding data line, and the exposure period may be a period from a time point, at which the corresponding reset scan signal is changed to an off-level, to a time point, at which the corresponding scan signal is changed to an on-level.

Abstract: A smart card according to an exemplary embodiment of the present invention includes: a transparent substrate including a side contacting a finger of a user; a reflection layer separated from the transparent substrate, facing the transparent substrate, and including a metal material; a photosensor provided between the transparent substrate and the reflection layer, and sensing light reflected and input from the reflection layer; and a card substrate including an opaque material and covering the reflection layer.

Abstract: The present invention relates to a sensor pixel including: a first transistor for a light sensing; a second transistor including one terminal connected to one terminal of the first transistor and the other terminal to which a reset voltage is transmitted; a third transistor including a gate connected to one terminal of the first transistor and one terminal connected to the other terminal of the first transistor; and a fourth transistor connected between the other terminal of the third transistor and a data line.

Abstract: A fingerprint recognition sensor according to an exemplary embodiment of the present invention includes: a photo sensor for sensing light that is diffuse-reflected from a finger of a user and incident on the photo sensor, or that is transmitted through the finger and incident on the photo sensor; a first matrix positioned on the photo sensor and including a first opening; a second matrix positioned on the first matrix and including a second opening; and a cover layer including one surface contacting the finger and positioned on the second matrix, wherein, from among light that is diffuse-reflected from the finger and incident on the cover layer or that is transmitted through the finger and incident on the cover layer, light having an angle, formed by a normal line on the one surface of the cover layer and a path of the light incident on the cover layer, that is greater than a critical angle, sequentially passes through the second opening and the first opening and is incident on the photo sensor.

Abstract: A fingerprint and image sensor includes a plurality of data lines, a plurality of scan lines, to which a plurality of scan signals is transferred, a plurality of reset scan lines, to which a plurality of reset scan signals is transferred, and a sensor panel, which is reset by a reset voltage, which is synchronized to a corresponding reset scan signal and is transferred, generates a pixel voltage according to light supplied during an exposure period, and includes a plurality of sensor pixels, which is synchronized to a corresponding scan signal and transfers the pixel voltage to a corresponding data line, and the exposure period may be a period from a time point, at which the corresponding reset scan signal is changed to an off-level, to a time point, at which the corresponding scan signal is changed to an on-level.

Abstract: Provided is a transparent fingerprint recognizing sensor array, including: a pixel driving circuit formed on a substrate; an antistatic wiring disposed in an upper part of the pixel driving circuit; and a pixel electrode connected to the pixel driving circuit, wherein the pixel electrode is made of a transparent material or has an open formed in a center part thereof.

Abstract: Provided is a transparent fingerprint recognizing sensor array, including: a pixel driving circuit formed on a substrate; an antistatic wiring disposed in an upper part of the pixel driving circuit; and a pixel electrode connected to the pixel driving circuit, wherein the pixel electrode is made of a transparent material or has an open formed in a center part thereof.

Abstract: Provided are an image sensor for an X-ray and a method of manufacturing the same, the image sensor for the X-ray, including: a semiconductor active layer formed on an insulating substrate; a gate insulating film on the semiconductor active layer; a gate electrode formed on the gate insulating film; an interlayer insulating film which is formed on the gate electrode and in which a first via hole is formed; a source electrode formed on the first via hole; a drain electrode formed on the first via hole; a first electrode formed to be connected to the source electrode or the drain electrode; and a photo diode formed on the first electrode.

Abstract: Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.

Abstract: Disclosed is a method for fabricating a thin film transistor. Specifically, the method uses local oxidation wherein a portion of a transparent metal oxide layer is locally oxidized to be converted into a semiconductor layer so that the oxidized portion of the transparent metal oxide layer can be used as a channel region and the unoxidized portions of the transparent metal oxide layer can be used as source and drain electrodes. The method comprises the steps of forming a gate electrode on a substrate and forming a gate insulating layer thereon, forming a transparent metal oxide layer on the gate insulating layer, forming an oxidation barrier layer on the transparent metal oxide layer in such a manner that a portion of the transparent metal oxide layer positioned over the gate electrode is exposed, and locally oxidizing only the exposed portion of the transparent metal oxide layer to convert the exposed portion into a semiconductor layer.

Abstract: Disclosed is a method for fabricating a thin film transistor. Specifically, the method uses local oxidation wherein a portion of a transparent metal oxide layer is locally oxidized to be converted into a semiconductor layer so that the oxidized portion of the transparent metal oxide layer can be used as a channel region and the unoxidized portions of the transparent metal oxide layer can be used as source and drain electrodes. The method comprises the steps of forming a gate electrode on a substrate and forming a gate insulating layer thereon, forming a transparent metal oxide layer on the gate insulating layer, forming an oxidation barrier layer on the transparent metal oxide layer in such a manner that a portion of the transparent metal oxide layer positioned over the gate electrode is exposed, and locally oxidizing only the exposed portion of the transparent metal oxide layer to convert the exposed portion into a semiconductor layer.

Abstract: Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.