Abstract: An inter-floor transport system includes a first interface unit at a first floor and configured to receive containers from a transport vehicle, and a car configured to receive containers from the first interface unit at the first floor and move containers to a second floor, where the car includes a cage, a storage unit in the cage and including a plurality of storage areas, and an arrangement unit in the cage, the arrangement unit being configured to receive containers from the first interface unit and store containers in respective storage areas of the plurality of storage areas of the storage unit.

Abstract: An apparatus for manufacturing a semiconductor device includes a substrate transfer unit configured to transfer a substrate, a rail unit including a driving rail extending in a first direction that the substrate transfer unit moves and a stopper on a side of the driving rail in a second direction crossing the first direction, and a lifting unit configured to move in the first direction and a third direction perpendicular to the first and second directions to remove the substrate transfer unit from the rail unit, wherein the lifting unit is configured to contact the stopper to move the stopper from a closed state to an open state.

Abstract: According to one embodiment of the present invention, a method for producing a sialon phosphor comprises: mixing a silicon precursor and an aluminum precursor and sintering the mixture to form a first sintered body; and mixing the first sintered body and a precursor for an active material and heat-treating the mixture to form a second sintered body. That is, the method for producing a sialon phosphor according to one embodiment of the present invention involves firstly forming the first sintered body serving as a host material to stably ensure a crystal structure, and then mixing the active material and the first sintered body so as to preserve the role of the active material without sacrificing the crystal structure of the first sintered body. Eventually, the active material in the crystal structure of the first sintered body is located in an interstitial site not located in the Si or Al position, thereby preventing the degradation of the crystallinity of the first sintered body.

Abstract: According to one example of the present application, a phosphor has the following composition formula (1): [composition formula 1] Si(6-z)AlzOyN(8-z):Rex, where x, y and z are 0.018?x?0.3, 0.3?y?0.75, 0.42?z?1.0, respectively, and Re is a rare earth element. Therefore, even when the aluminum concentration is 0.42 mol to 1.0 mol, a sialon phosphor of the present application exhibits high luminance and has a particle size D50 varying between 5 to 20 ?m. In addition, a method for preparing a phosphor according to one example of the present application involves adjusting the oxygen concentration to ensure the superior crystallinity of the phosphor and thus improve the luminance thereof.

Abstract: There are provided a phosphor and a light emitting device. The phosphor includes a phosphor composition including a rare-earth element employed in a compound represented by the equation: L3Si6N11, wherein L is one or more elements selected from La, Y, Gd and Lu, the rare-earth element is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Tb, Ho, Er, Tm and Yb. The phosphor composition is provided in particle form. The particle has at least a portion of a plane perpendicular to a [001] direction to be flat thereon so as to have a crystal plane.

Abstract: A phosphor is represented by a general Formula: EuxMyL3?x?ySi6?zAlzN11?(z+y+z)O(z+y+z) and satisfies 0.00001?x?2.9999, 0.0001?y?2.99999 and 0?z?6.0. L is at least one element selected from La, Y, Gd and Lu. M is at least one element selected from Ca, Sr, Ba and Mn.

Abstract: There is provided a method for preparing a ?-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a ?-SiAlON phosphor represented by Formula: Si(6-x)AlxOyN(8-y):Lnz (wherein, Ln is a rare earth element, and the following requirements are satisfied: 0<x?4.2, 0<y?4.2, and 0<z?1.0) includes: mixing starting materials to prepare a raw material mixture; and heating the raw material mixture in a nitrogen-containing atmospheric gas, wherein the starting materials includes a host raw material including a silicon raw material including metallic silicon, and at least one aluminum raw material selected from the group consisting of metallic aluminum and aluminum compound, and at least activator raw material selected from the rare earth elements for activating the host raw material.

Abstract: A method for producing a sialon phosphor is provided. The method includes mixing a silicon precursor and an aluminum precursor and sintering the mixture to form a first sintered body. The first sintered body and a precursor for an active material are mixed and the mixture is heat-treated to form a second sintered body. That is, the exemplary method for producing a sialon phosphor involves firstly forming the first sintered body serving as a host material to stably ensure a crystal structure, and then mixing the active material and the first sintered body so as to preserve the role of the active material without sacrificing the crystal structure of the first sintered body.

Abstract: A method for preparing a phosphor includes: dissolving at least one metal as a raw material of a desired phosphor in liquid ammonia to form a metal-amide type precursor; gathering the metal-amide type precursor; and firing the precursor to form a desired phosphor.

Abstract: A method of manufacturing a light emitting diode package. A cup-shaped package structure with a recess formed therein and an electrode structure formed on a bottom of the recess is prepared. A light emitting diode chip is mounted on a bottom of the recess with a terminal of the chip electrically connected to the electrode structure. A liquid-state transparent resin is injected in the recess and before the liquid-state transparent resin is completely cured, a stamp with a micro rough pattern engraved thereon is applied on an upper surface of the resin. The liquid-state transparent resin is cured with the stamp applied thereon to form a resin encapsulant and the stamp is removed from the resin encapsulant.

Abstract: According to one embodiment of the present invention, a phosphor has the following composition formula (1): [composition formula 1] Si(6-z)AlzOyN(8-z):Rex, where x, y and z are 0.018?x?0.3, 0.3?y?0.75, 0.42?z?1.0, respectively, and Re is a rare earth element. Therefore, even when the aluminum concentration is 0.42 mol to 1.0 mol, a sialon phosphor of the present invention exhibits high luminance and has a particle size D50 varying between 5 to 20 ?m. In addition, a method for preparing a phosphor according to one embodiment of the present invention involves adjusting the oxygen concentration to ensure the superior crystallinity of the phosphor and thus improve the luminance thereof.

Abstract: The invention relates to a method of forming a phosphor film and a method of manufacturing an LED package incorporating the same. The method of forming a phosphor film includes mixing phosphor and light-transmitting beads in an aqueous solvent such that the nano-sized light-transmitting beads having a first charge are adsorbed onto surfaces of phosphor particles having a second charge. The method also includes coating a phosphor mixture obtained from the mixing step on an area where the phosphor film is to be formed, and drying the coated phosphor mixture to form the phosphor film. The invention further provides a method of manufacturing an LED package incorporating the method of forming the phosphor film.

Abstract: A method for preparing a phosphor includes: dissolving at least one metal as a raw material of a desired phosphor in liquid ammonia to form a metal-amide type precursor; gathering the metal-amide type precursor; and firing the precursor to form a desired phosphor.

Abstract: There is provided a method for preparing a ?-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a ?-SiAlON phosphor represented by Formula: Si(6?x)AlxOyN(6?y):Lnz (wherein, Ln is a rare earth element, and the following requirements are satisfied: 0<x?4.2, 0<y?4.2, and 0<z?1.0) includes: mixing starting materials to prepare a raw material mixture; and heating the raw material mixture in a nitrogen-containing atmospheric gas, wherein the starting materials includes a host raw material including a silicon raw material including metallic silicon, and at least one aluminum raw material selected from the group consisting of metallic aluminum and aluminum compound, and at least activator raw material selected from the rare earth elements for activating the host raw material.

Abstract: There is provided a method for preparing a ?-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a ?-SiAlON phosphor represented by Formula: Si(6-x)AlxOyN(8-y):Lnz (wherein, Ln is a rare earth element, and the following requirements are satisfied: 0<x?4.2, 0<y?4.2, and 0<z?1.0) includes: mixing starting materials to prepare a raw material mixture; and heating the raw material mixture in a nitrogen-containing atmospheric gas, wherein the starting materials includes a host raw material including a silicon raw material including metallic silicon, and at least one aluminum raw material selected from the group consisting of metallic aluminum and aluminum compound, and at least activator raw material selected from the rare earth elements for activating the host raw material.

Abstract: The invention relates to a method of forming a phosphor film and a method of manufacturing an LED package incorporating the same. The method of forming a phosphor film includes mixing phosphor and light-transmitting beads in an aqueous solvent such that the nano-sized light-transmitting beads having a first charge are adsorbed onto surfaces of phosphor particles having a second charge. The method also includes coating a phosphor mixture obtained from the mixing step on an area where the phosphor film is to be formed, and drying the coated phosphor mixture to form the phosphor film. The invention further provides a method of manufacturing an LED package incorporating the method of forming the phosphor film.

Abstract: The invention relates to a method of forming a phosphor film and a method of manufacturing an LED package incorporating the same. The method of forming a phosphor film includes mixing phosphor and light-transmitting beads in an aqueous solvent such that the nano-sized light-transmitting beads having a first charge are adsorbed onto surfaces of phosphor particles having a second charge. The method also includes coating a phosphor mixture obtained from the mixing step on an area where the phosphor film is to be formed, and drying the coated phosphor mixture to form the phosphor film. The invention further provides a method of manufacturing an LED package incorporating the method of forming the phosphor film.

Abstract: There is provided a method for preparing a ?-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a ?-SiAlON phosphor represented by Formula: Si(6-x)AlxOyN(6-y):Lnz (wherein, Ln is a rare earth element, and the following requirements are satisfied: 0<x?4.2, 0<y?4.2, and 0<z?1.0) includes: mixing starting materials to prepare a raw material mixture; and heating the raw material mixture in a nitrogen-containing atmospheric gas, wherein the starting materials includes a host raw material including a silicon raw material including metallic silicon, and at least one aluminum raw material selected from the group consisting of metallic aluminum and aluminum compound, and at least activator raw material selected from the rare earth elements for activating the host raw material.

Abstract: Provided is a method of manufacturing a high-power LED package, the method including the steps of: preparing a mold having an irregularity pattern; providing a transparent resin solid having an irregularity pattern provided on the surface thereof by using the mold; preparing an irregularity film with the irregularity pattern by cutting a portion of the transparent resin solid; preparing an LED package structure having a cavity in which an LED chip is mounted; filling transparent liquid resin into the cavity having the LED chip mounted therein; mounting the irregularity film on the transparent liquid resin such that the irregularity film projects from the cavity at a predetermined height; and curing the transparent liquid resin having the irregularity film mounted thereon. The irregularity pattern of the irregularity film projects from the cavity at a predetermined height.

Abstract: A light emitting diode package with reduced light loss includes a package substrate, a light emitting diode chip mounted on the package substrate and an encapsulant formed on the package substrate to encapsulate the light emitting diode chip. The encapsulant has a refractive index gradient with refractive indices continuously increasing from a peripheral surface thereof to a central axis thereof.