Patents by Inventor Youn-Jin Cho

Youn-Jin Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • COMPOUND, CMP SLURRY COMPOSITION INCLUDING THE SAME AND POLISHING METHOD USING THE SAME
    Publication number: 20230227695
    Abstract: A compound or a salt thereof, a CMP slurry composition including the same, and a polishing method using the same, the compound being represented by Formula 1,
    Type: Application
    Filed: December 5, 2022
    Publication date: July 20, 2023
    Inventors: Se Young CHOI, Yong Goog KIM, Soo Yeon SIM, Ja Young HWANG, Jeong Hee KIM, Youn Jin CHO
  • Composition for etching silicon nitride film and etching method using same
    Patent number: 11608471
    Abstract: An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed,
    Type: Grant
    Filed: April 5, 2019
    Date of Patent: March 21, 2023
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Ki Wook Hwang, Sang Ran Koh, Youn Jin Cho, Jung Min Choi, Kwen Woo Han, Jun Young Jang, Yong Woon Yoon
  • CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
    Patent number: 11560495
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.
    Type: Grant
    Filed: January 22, 2021
    Date of Patent: January 24, 2023
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Won Jung Kim, Yoon Young Koo, Tae Won Park, Eui Rang Lee, Jong Won Lee, Youn Jin Cho
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20220112401
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent; and an abrasive agent, wherein the abrasive agent includes silica modified with polyethyleneimine-derived aminosilane, and the composition has a pH of about 4 to about 7.
    Type: Application
    Filed: September 20, 2021
    Publication date: April 14, 2022
    Inventors: Won Jung KIM, Yoon Young KOO, Hyeong Mook KIM, Tae Won PARK, Eui Rang LEE, Jong Won LEE, Youn Jin CHO
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20220025214
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3:
    Type: Application
    Filed: July 19, 2021
    Publication date: January 27, 2022
    Inventors: Eui Rang LEE, Yoon Young KOO, Won Jung KIM, Hyeong Mook KIM, Tae Won PARK, Jong Won LEE, Youn Jin CHO
  • COMPOSITION FOR ETCHING SILICON NITRIDE FILM AND ETCHING METHOD USING SAME
    Publication number: 20210363423
    Abstract: An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1 and a reaction product thereof, and an etching method using the same are disclosed.
    Type: Application
    Filed: April 5, 2019
    Publication date: November 25, 2021
    Inventors: Ki Wook HWANG, Sang Ran KOH, Youn Jin CHO, Jung Min CHOI, Kwen Woo HAN, Jun Young Jang, Yong Woon YOON
  • CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
    Publication number: 20210230451
    Abstract: A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.
    Type: Application
    Filed: January 22, 2021
    Publication date: July 29, 2021
    Inventors: Won Jung KIM, Yoon Young KOO, Tae Won PARK, Eui Rang LEE, Jong Won LEE, Youn Jin CHO
  • Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer
    Patent number: 10093830
    Abstract: A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: October 9, 2018
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Wan-Hee Lim, Taek-Soo Kwak, Han-Song Lee, Eun-Su Park, Sun-Hae Kang, Bo-Sun Kim, Sang-Kyun Kim, Sae-Mi Park, Jin-Hee Bae, Jin-Woo Seo, Jun-Young Jang, Youn-Jin Cho, Kwen-Woo Han, Byeong-Gyu Hwang
  • Composition for forming silica based layer, and method for manufacturing silica based layer
    Patent number: 9902873
    Abstract: A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 ?m to about 1 ?m is less than or equal to about 10/ml.
    Type: Grant
    Filed: December 5, 2014
    Date of Patent: February 27, 2018
    Assignee: SAMSUNG SDI CO., LTD.
    Inventors: Jin-Hee Bae, Taek-Soo Kwak, Han-Song Lee, Youn-Jin Cho, Byeong-Gyu Hwang, Bo-Sun Kim, Sae-Mi Park, Eun-Su Park, Jin-Woo Seo, Wan-Hee Lim, Jun-Young Jang, Kwen-Woo Han
  • Monomer, hardmask composition comprising monomer, and pattern forming method using hardmask composition
    Patent number: 9823566
    Abstract: Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. In the above Chemical Formula 1, A, A? , X, Y, I, m and n are the same as described in the detailed description.
    Type: Grant
    Filed: May 8, 2013
    Date of Patent: November 21, 2017
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Yong-Woon Yoon, Sung-Jae Lee, Joon-Young Moon, You-Jung Park, Chul-Ho Lee, Youn-Jin Cho
  • MONOMER FOR A HARDMASK COMPOSITION, HARDMASK COMPOSITION COMPRISING THE MONOMER, AND METHOD FOR FORMING A PATTERN USING THE HARDMASK COMPOSITION
    Publication number: 20170327640
    Abstract: Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A?, L and n are the same as in the detailed description.
    Type: Application
    Filed: August 3, 2017
    Publication date: November 16, 2017
    Inventors: Yun-Jun KIM, Hwan-Sung CHEON, Youn-Jin CHO, Yong-Woon YOON, Chung-Heon LEE, Hyo-Young KWON, Yoo-Jeong CHOI
  • Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition
    Patent number: 9725389
    Abstract: Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A?, L and n are the same as in the detailed description.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: August 8, 2017
    Assignee: Cheil Industries, Inc.
    Inventors: Yun-Jun Kim, Hwan-Sung Cheon, Youn-Jin Cho, Yong-Woon Yoon, Chung-Heon Lee, Hyo-Young Kwon, Yoo-Jeong Choi
  • Monomer for hardmask composition, hardmask composition including said monomer, and method for forming pattern using said hardmask composition
    Patent number: 9671688
    Abstract: Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the same. In the above Chemical Formula 1, A, A?, L, L?, X and n are the same as defined in the specification.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: June 6, 2017
    Assignee: Cheil Industries, Inc.
    Inventors: Seung-Wook Shin, Yun-Jun Kim, Hea-Jung Kim, Youn-Jin Cho, Yoo-Jeong Choi
  • Monomer, hardmask composition including monomer, and method for forming pattern by using hardmask composition
    Patent number: 9556094
    Abstract: Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. In the above Chemical Formula 1, A1 to A3, X1 to X3, L1, L2, n and m are the same as described in the detailed description.
    Type: Grant
    Filed: June 4, 2013
    Date of Patent: January 31, 2017
    Assignee: Cheil Industries, Inc.
    Inventors: Yun-Jun Kim, Hyo-Young Kwon, Hea-Jung Kim, Chung-Heon Lee, Youn-Jin Cho, Yoo-Jeong Choi
  • Hard mask composition and method for forming pattern using same
    Patent number: 9529257
    Abstract: Disclosed are a polymer represented by the Chemical Formula 1, a monomer represented by the Chemical Formula 2, and a solvent, wherein the monomer is included in the same or a higher amount than the polymer, and a method of forming patterns using the same.
    Type: Grant
    Filed: September 2, 2013
    Date of Patent: December 27, 2016
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Chul-Ho Lee, You-Jung Park, Yong-Woon Yoon, Sung-Jae Lee, Youn-Jin Cho, Young-Min Kim, Chung-Heon Lee
  • Monomer, hard mask composition comprising said monomer, and method for forming pattern using said hard mask composition
    Patent number: 9513546
    Abstract: Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same.
    Type: Grant
    Filed: March 19, 2013
    Date of Patent: December 6, 2016
    Assignee: Cheil Industries, Inc.
    Inventors: You-Jung Park, Hea-Jung Kim, Yo-Choul Park, Yong-Woon Yoon, Sung-Jae Lee, Chul-Ho Lee, Youn-Jin Cho
  • COMPOSITION FOR FORMING A SILICA BASED LAYER, METHOD FOR MANUFACTURING SILICA BASED LAYER, AND ELECTRONIC DEVICE INCLUDING THE SILICA BASED LAYER
    Publication number: 20160177133
    Abstract: A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.
    Type: Application
    Filed: September 1, 2015
    Publication date: June 23, 2016
    Inventors: Wan-Hee Lim, Taek-Soo Kwak, Han-Song Lee, Eun-Su Park, Sun-Hae Kang, Bo-Sun Kim, Sang-Kyun Kim, Sae-Mi Park, Jin-Hee Bae, Jin-Woo Seo, Jun-Young Jang, Youn-Jin Cho, Kwen-Woo Han, Byeong-Gyu Hwang
  • Monomer for hardmask composition, hardmask composition including monomer, and pattern forming method using hardmask composition
    Patent number: 9359276
    Abstract: Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: June 7, 2016
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Yoo-Jeong Choi, Hyo-Young Kwon, Youn-Jin Cho, Yun-Jun Kim, Young-Min Kim, Yong-Woon Yoon, Chung-Heon Lee
  • Rinse liquid for insulating film and method of rinsing insulating film
    Patent number: 9312122
    Abstract: A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: April 12, 2016
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Jin-Hee Bae, Han-Song Lee, Wan-Hee Lim, Go-Un Kim, Taek-Soo Kwak, Bo-Sun Kim, Sang-Kyun Kim, Yoong-Hee Na, Eun-Su Park, Jin-Woo Seo, Hyun-Ji Song, Youn-Jin Cho, Kwen-Woo Han, Byeong-Gyu Hwang
  • Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition
    Patent number: 9284245
    Abstract: A monomer for a hardmask composition represented by the following Chemical Formula 1,
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: March 15, 2016
    Assignee: CHEIL INDUSTRIES, INC.
    Inventors: Sung-Jae Lee, Hwan-Sung Cheon, Youn-Jin Cho, Chul-Ho Lee, Chung-Heon Lee