Abstract: An anisotropic conductive film composition, an anisotropic conductive film prepared using the same, and a connection structure using the same, the anisotropic conductive film including a binder resin; a curable alicyclic epoxy compound; a curable oxetane compound; a quaternary ammonium catalyst; and conductive particles, wherein the anisotropic conductive film has a heat quantity variation rate of about 15% or less, as measured by differential scanning calorimetry (DSC) and calculated by Equation 1: Heat quantity variation rate (%)=[(H0?H1)/H0]×100??Equation 1 wherein H0 is a DSC heat quantity of the anisotropic conductive film, as measured at 25° C. and a time point of 0 hr, and H1 is a DSC heat quantity of the anisotropic conductive film, as measured after being left at 40° C. for 24 hours.

Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

Abstract: A display device connected by an anisotropic conductive film, wherein the anisotropic conductive film includes conductive particles and has a minimum melt viscosity of 900 Pa·s to 90,000 Pa·s at 80° C. to 140° C.

Abstract: An anisotropic conductive film composition, an anisotropic conductive film prepared using the same, and a connection structure using the same, the anisotropic conductive film including a binder resin; a curable alicyclic epoxy compound; a curable oxetane compound; a quaternary ammonium catalyst; and conductive particles, wherein the anisotropic conductive film has a heat quantity variation rate of about 15% or less, as measured by differential scanning calorimetry (DSC) and calculated by Equation 1: Heat quantity variation rate (%)=[(H0?H1)/H0]×100??Equation 1 wherein H0 is a DSC heat quantity of the anisotropic conductive film, as measured at 25° C. and a time point of 0 hr, and H1 is a DSC heat quantity of the anisotropic conductive film, as measured after being left at 40° C. for 24 hours.

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, wherein the anisotropic conductive film has an electrical conductivity of more than 0 ?S/cm to about 100 ?S/cm.

Abstract: A display device connected by an anisotropic conductive film, wherein the anisotropic conductive film includes conductive particles and has a minimum melt viscosity of 900 Pa·s to 90,000 Pa·s at 80° C. to 140° C.

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, the anisotropic conductive film has a halogen ion content of more than 0 ppm to about 100 ppm.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film including a binder resin; a first radical polymerization material having one or two (meth)acrylate reactive groups in a structure thereof and a second radical polymerization material having at least three (meth)acrylate reactive groups in a structure thereof; and conductive particles, the anisotropic conductive film having a moisture permeability of 170 g/m2/24 hr or less and a moisture absorbency of 2% or less.

Abstract: A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a conductive adhesive layer and an insulating adhesive layer stacked thereon, an amount of reactive monomers in the conductive adhesive layer being higher than an amount of reactive monomers in the insulating adhesive layer.

Abstract: A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film including a binder resin; a first radical polymerization material having one or two (meth)acrylate reactive groups in a structure thereof and a second radical polymerization material having at least three (meth)acrylate reactive groups in a structure thereof; and conductive particles, the anisotropic conductive film having a moisture permeability of 170 g/m2/24 hr or less and a moisture absorbency of 2% or less.

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, the anisotropic conductive film has a halogen ion content of more than 0 ppm to about 100 ppm.

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, wherein the anisotropic conductive film has an electrical conductivity of more than 0 ?S/cm to about 100 ?S/cm.

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, the binder part having an ion content of more than 0 ppm to about 100 ppm.

Abstract: An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

Abstract: A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a conductive adhesive layer and an insulating adhesive layer stacked thereon, an amount of reactive monomers in the conductive adhesive layer being higher than an amount of reactive monomers in the insulating adhesive layer.

Abstract: An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, the binder part having an ion content of more than 0 ppm to about 100 ppm.