Patents by Inventor Young Bog Kim
Young Bog Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9576965Abstract: A semiconductor device includes a bit line disposed over a semiconductor substrate, a supporting film being perpendicular to the bit line, a first storage node contact disposed at a lower part of a region disposed between the bit line and the supporting film, and a second storage node contact having a line shape, disposed over the first storage node contact and the bit line, isolated by the supporting film, and patterned in a diagonal direction across the bit line.Type: GrantFiled: June 29, 2015Date of Patent: February 21, 2017Assignee: SK HYNIX INC.Inventors: Jae Man Yoon, Young Bog Kim, Yun Seok Chun, Woong Choi, Woo Jun Lee
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Patent number: 9418845Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.Type: GrantFiled: January 20, 2015Date of Patent: August 16, 2016Assignee: SK HYNIX INC.Inventor: Young Bog Kim
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Publication number: 20150380415Abstract: A semiconductor device includes a bit line disposed over a semiconductor substrate, a supporting film being perpendicular to the bit line, a first storage node contact disposed at a lower part of a region disposed between the bit line and the supporting film, and a second storage node contact having a line shape, disposed over the first storage node contact and the bit line, isolated by the supporting film, and patterned in a diagonal direction across the bit line.Type: ApplicationFiled: June 29, 2015Publication date: December 31, 2015Inventors: Jae Man YOON, Young Bog KIM, Yun Seok CHUN, Woong CHOI, Woo Jun LEE
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Publication number: 20150132897Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.Type: ApplicationFiled: January 20, 2015Publication date: May 14, 2015Inventor: Young Bog KIM
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Publication number: 20150115392Abstract: A semiconductor device includes a bit line disposed over a semiconductor substrate, a supporting film being perpendicular to the bit line, a first storage node contact disposed at a lower part of a region disposed between the bit line and the supporting film, and a second storage node contact having a line shape, disposed over the first storage node contact and the bit line, isolated by the supporting film, and patterned in a diagonal direction across the bit line.Type: ApplicationFiled: March 28, 2014Publication date: April 30, 2015Applicant: SK HYNIX INC.Inventors: Jae Man YOON, Young Bog KIM, Yun Seok CHUN, Woong CHOI, Woo Jun LEE
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Patent number: 8994143Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.Type: GrantFiled: July 17, 2012Date of Patent: March 31, 2015Assignee: Hynix Semiconductor Inc.Inventor: Young Bog Kim
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Publication number: 20120280394Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.Type: ApplicationFiled: July 17, 2012Publication date: November 8, 2012Applicant: Hynix Semiconductor Inc.Inventor: Young Bog KIM
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Patent number: 8236665Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.Type: GrantFiled: April 12, 2010Date of Patent: August 7, 2012Assignee: Hynix Semiconductor Inc.Inventor: Young Bog Kim
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Patent number: 7859041Abstract: A gate structure of a semiconductor device comprising a silicon substrate having a field oxide film, a plurality of gates formed by sequentially stacking a first gate dielectric film, a first gate conductive film, and a gate silicide film on the silicon substrate. a thermal oxide film formed on a side of the first gate conductive film, a plurality of trenches formed between the gates, a second gate oxide film formed on an interior wall of each trench; and a second conductive film formed in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film and the thermal oxide film.Type: GrantFiled: June 16, 2009Date of Patent: December 28, 2010Assignee: Hynix Semiconductor Inc.Inventors: Young Bog Kim, Jun Soo Chang, Min Yong Lee, Yong Seok Eun
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Publication number: 20100197110Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.Type: ApplicationFiled: April 12, 2010Publication date: August 5, 2010Applicant: Hynix Semiconductor Inc.Inventor: Young Bog KIM
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Patent number: 7696601Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.Type: GrantFiled: December 12, 2006Date of Patent: April 13, 2010Assignee: Hynix Semiconductor Inc.Inventor: Young Bog Kim
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Publication number: 20090256209Abstract: A gate structure of a semiconductor device comprising a silicon substrate having a field oxide film, a plurality of gates formed by sequentially stacking a first gate dielectric film, a first gate conductive film, and a gate silicide film on the silicon substrate. a thermal oxide film formed on a side of the first gate conductive film, a plurality of trenches formed between the gates, a second gate oxide film formed on an interior wall of each trench; and a second conductive film formed in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film and the thermal oxide film.Type: ApplicationFiled: June 16, 2009Publication date: October 15, 2009Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Young Bog Kim, Jun Soo Chang, Min Yong Lee, Yong Seok Eun
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Patent number: 7566621Abstract: A method for forming a semiconductor device having a fin structure includes (a) forming a device isolation film over a silicon substrate to define an active area, (b) etching silicon substrate of gate forming region to form a trench, (c) selectively etching the device isolation film of a trench boundary, (d) forming a gate oxide film over the entire surface of the resulting structure, (e) depositing an electrode material over the entire surface of the resulting structure to form a gate electrode, and (f) forming a gate spacer over a sidewall of the gate electrode.Type: GrantFiled: April 27, 2006Date of Patent: July 28, 2009Assignee: Hynix Semiconductor Inc.Inventor: Young Bog Kim
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Patent number: 7563673Abstract: Disclosed herein is a method for forming a gate structure of a semiconductor device. The method comprises forming a plurality of gates including a first gate dielectric film, a first gate conductive film, and a gate silicide film sequentially stacked on a silicon substrate having a field oxide film, forming a thermal oxide film on a side of the first gate conductive film, etching the silicon substrate exposed between the plurality of gates to a predetermined depth to form a plurality of trenches, forming a second gate oxide film on the interior wall of the trenches, and forming a second gate conductive film in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film, and the thermal oxide film.Type: GrantFiled: November 8, 2005Date of Patent: July 21, 2009Assignee: Hynix Semiconductor Inc.Inventors: Young Bog Kim, Jun Soo Chang, Min Yong Lee, Yong Seok Eun
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Patent number: 7338864Abstract: Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a plurality of gate structures each being formed on the substrate disposed between the bit line contact junction and one of the storage node contact junctions. Each sidewall of the trench becomes a part of the individual channels and thus, channel lengths of the transistors in the cell region become elongated. Accordingly, the storage node contact junctions have a decreased level of leakage currents, thereby increasing data retention time.Type: GrantFiled: March 20, 2006Date of Patent: March 4, 2008Assignee: Hynix Semiconductor Inc.Inventors: Eung-Rim Hwang, Se-Aug Jang, Tae-Woo Jung, Seo-Min Kim, Woo-Jin Kim, Hyung-Soon Park, Young-Bog Kim, Hong-Seon Yang, Hyun-Chul Sohn
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Publication number: 20070278610Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.Type: ApplicationFiled: December 12, 2006Publication date: December 6, 2007Applicant: Hynix Semiconductor Inc.Inventor: Young Bog Kim
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Publication number: 20060160286Abstract: Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a plurality of gate structures each being formed on the substrate disposed between the bit line contact junction and one of the storage node contact junctions. Each sidewall of the trench becomes a part of the individual channels and thus, channel lengths of the transistors in the cell region become elongated. Accordingly, the storage node contact junctions have a decreased level of leakage currents, thereby increasing data retention time.Type: ApplicationFiled: March 20, 2006Publication date: July 20, 2006Inventors: Eung-Rim Hwang, Se-Aug Jang, Tae-Woo Jung, Seo-Min Kim, Woo-Jin Kim, Hyung-Soon Park, Young-Bog Kim, Hong-Seon Yang, Hyun-Chul Sohn
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Patent number: 7045846Abstract: Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a plurality of gate structures each being formed on the substrate disposed between the bit line contact junction and one of the storage node contact junctions. Each sidewall of the trench becomes a part of the individual channels and thus, channel lengths of the transistors in the cell region become elongated. Accordingly, the storage node contact junctions have a decreased level of leakage currents, thereby increasing data retention time.Type: GrantFiled: February 7, 2005Date of Patent: May 16, 2006Assignee: Hynix Semiconductor Inc.Inventors: Se-Aug Jang, Tae-Woo Jung, Seo-Min Kim, Woo-Jin Kim, Hyung-Soon Park, Young-Bog Kim, Hong-Seon Yang, Hyun-Chul Sohn, Eung-Rim Hwang
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Publication number: 20060022249Abstract: Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a plurality of gate structures each being formed on the substrate disposed between the bit line contact junction and one of the storage node contact junctions. Each sidewall of the trench becomes a part of the individual channels and thus, channel lengths of the transistors in the cell region become elongated. Accordingly, the storage node contact junctions have a decreased level of leakage currents, thereby increasing data retention time.Type: ApplicationFiled: February 7, 2005Publication date: February 2, 2006Inventors: Se-Aug Jang, Tae-Woo Jung, Seo-Min Kim, Woo-Jin Kim, Hyung-Soon Park, Young-Bog Kim, Hong-Seon Yang, Hyun-Chul Sohn, Eung-Rim Hwang
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Patent number: 6420241Abstract: A method for forming an element isolation film of a semiconductor device and the semiconductor device. A pad insulator is constructed on a semiconductor substrate. An over-etching process is performed to recess the semiconductor substrate to a predetermined depth while giving a pad insulator pattern. After an insulator spacer is formed at the side wall of the pad insulator pattern, the exposed region of the semiconductor substrate is thermally oxidized to grow an oxide which is, then, removed to form a recess. An element isolation film is formed in the recess by break-through field oxidation and high temperature field oxidation. The element isolation film thus obtained can prevent the field oxide “ungrowth” phenomenon and at the same time mitigate the field oxide thinning effect as well as improve the properties of the gate oxide.Type: GrantFiled: April 17, 1998Date of Patent: July 16, 2002Assignee: Hyundai Electronics Industries Co., Ltd.Inventors: Se Aug Jang, Young Bog Kim, In Seok Yeo, Jong Choul Kim