Abstract: A semiconductor device includes: an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern; a gate structure disposed on the lower pattern; and a source/drain pattern disposed on the lower pattern, and connected to each of the plurality of sheet patterns, wherein the plurality of sheet patterns include a first sheet pattern and a second sheet pattern. The second sheet pattern is disposed between the first sheet pattern and the lower pattern. A first upper width of an upper surface of the first sheet pattern is greater than a first lower width of a bottom surface of the first sheet pattern, and a second upper width of an upper surface of the second sheet pattern is smaller than a second lower width of a bottom surface of the second sheet pattern.

Abstract: A semiconductor device includes an active pattern including a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction. The sheet patterns include an uppermost sheet pattern and a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction. Each of the plurality of gate structures includes a gate electrode and a gate insulating film and a source/drain pattern between adjacent ones of the plurality of gate structures. Each of inner gate structures includes a gate electrode and a gate insulating film. A semiconductor liner film includes silicon-germanium, and contacts the gate insulating film of each of the inner gate structures. A portion of the semiconductor liner film protrudes upwardly in the first direction beyond an upper surface of the uppermost sheet pattern.

Abstract: The present application discloses a martensitic oxide dispersion-strengthened alloy having enhanced high-temperature strength and creep properties. The alloy includes chromium (Cr) of 8 to 12% by weight, yttria (Y2O3) of 0.1 to 0.5% by weight, carbon (C) of 0.02 to 0.2% by weight, molybdenum (Mo) of 0.2 to 2% by weight, titanium (Ti) of 0.01 to 0.3% by weight, zirconium (Zr) of 0.01 to 0.2% by weight, nickel (Ni) of 0.05 to 0.2% by weight and the balance of iron (Fe). The application also discloses a method of making the alloy.