Abstract: The present invention relates to a resin composition having high miscibility between internal components, low thermal expansion characteristics, and excellent mechanical properties, and a prepreg and a metal clad laminate formed from the same.

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

Abstract: An image sensor and an electronic apparatus, the image sensor including a plurality of pixels, each pixel of the plurality of pixels including a photodiode and a transfer transistor, a reset transistor, a source-follower transistor, and a selection transistor, which correspond to the photodiode; a plurality of first interconnection lines connected to gates of the transfer transistor, the reset transistor, and the selection transistor, the plurality of first interconnection lines extending in a first direction; and a plurality of second interconnection lines connected to a source region of the selection transistor, the plurality of second interconnection lines extending in a second direction that intersects the first direction, wherein the plurality of second interconnection lines includes dummy lines on a peripheral area that is outside of a pixel area in which the pixels are located.

Abstract: Systems and methods for detecting eye information are described. According to one embodiment, a detecting device includes a determination unit, a generation unit, and a detection unit. The determination unit is configured to determine whether a user wears glasses from an input image by using a first neural network including a plurality of filters. The generation unit is configured to generate a face image in which the glasses are removed from the input image by using a learned generator when a glasses-wearing signal is received from the determination unit. The detection unit is configured to generate an eye image by receiving the input image from the determination unit or receiving the face image from the generation unit and detect a pupil from the eye image using a second neural network including a plurality of filters.

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

Abstract: The present invention relates to a thermosetting resin composition for coating a metal film having high flowability and pattern-filling property and a metal laminate using the same.

Abstract: A pupil detection device includes: a filter weight learner configured to generate a target image on the basis of pupil coordinate data acquired from a learning image and learn weights of a plurality of filters in order to generate a filtered image, by filtering the learning image using the plurality of filters, that is within a predetermined reference range of the target image; a split image generator configured to generate a pupil region split image for an input image using the plurality of filters having the learned weights; and a pupil coordinate detector configured to remove noise of the pupil region split image, select at least one of a plurality of pixels from which noise is removed, and detect pupil coordinates.

Abstract: A backlight device includes: a light source to emit coherent light; an optical path difference generator on the light source, the optical path difference generator including an incident surface and a plurality of light emitting surfaces, the light emitting surfaces being parallel to the incident surface and having different separation distances from the incident surface; a light condenser on the optical path difference generator; a diffuser on the light condenser; and a collimator on the diffuser.

Abstract: A method of diagnosing malfunctioning of a bypass diode in a solar photovoltaic battery system is provided. The method may include: collecting solar photovoltaic battery operation information indicating a solar photovoltaic battery operation state, from a signal of a solar photovoltaic battery detection unit, while maximum power point tracking control is performed with the solar photovoltaic battery system in operation; and determining whether or not the bypass diodes based on the collected solar photovoltaic battery operation information.

Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

Abstract: An image sensor includes a semiconductor substrate including a first surface and a second surface and further includes a well region and a first floating diffusion region that are each adjacent to the first surface. The image sensor includes a first vertical transmission gate and a second vertical transmission gate isolated from direct contact with each other and each extend from the first surface of the semiconductor substrate and in a thickness direction of the semiconductor substrate through at least a portion of the well region. The image sensor includes a first storage gate between the first vertical transmission gate and the first floating diffusion region and on the first surface of the semiconductor substrate. The image sensor includes a first tap transmission gate between the first storage gate and the first floating diffusion region and on the first surface of the semiconductor substrate.

Abstract: A pixel array in a three-dimensional image sensor includes depth pixels and an ambient light cancellation (ALC) circuit. The depth pixels operate in response to photo control signals having different phases, and generate distance information of an object based on light reflected by the object. The ALC circuit removes an ambient light component from the reflected light, and is shared by the depth pixels. Each depth pixel includes a photoelectric conversion region, a floating diffusion region, a photo gate, and a drain gate. The photoelectric conversion region collects photo charges based on the reflected light. The floating diffusion region accumulates the photo charges. The photo gate is activated in response to one of the photo control signals. The photoelectric conversion region accumulates the photo charges when the photo gate is activated, and the photo charges in the photoelectric conversion region are released when the drain gate is activated.

Abstract: A centrifugal casting apparatus is provided. The centrifugal casting apparatus includes an upper mold machined to have an inner contour used to form an upper side surface of a casting, and a lower mold machined to have an inner contour used to form a lower side surface of the casting. An upper motor provides power to rotate the upper mold and a lower motor provides power to rotate the lower mold. The upper motor and the lower motor are operated independently of each other.

Abstract: An image sensor includes a semiconductor substrate including a first surface and a second surface and further includes a well region and a first floating diffusion region that are each adjacent to the first surface. The image sensor includes a first vertical transmission gate and a second vertical transmission gate isolated from direct contact with each other and each extend from the first surface of the semiconductor substrate and in a thickness direction of the semiconductor substrate through at least a portion of the well region. The image sensor includes a first storage gate between the first vertical transmission gate and the first floating diffusion region and on the first surface of the semiconductor substrate. The image sensor includes a first tap transmission gate between the first storage gate and the first floating diffusion region and on the first surface of the semiconductor substrate.

Abstract: Image sensors are provided. An image sensor includes a substrate that includes a pixel region, a first surface, and a second surface that is opposite the first surface. The image sensor includes first and second photogates that are on the first surface and are configured to generate electric charge responsive to incident light in the pixel region. Moreover, the image sensor includes first and second lenses that are on the second surface and are configured to pass the incident light toward the first and second photogates.

Abstract: An image sensor including a light source configured to emit an optical signal to a target object, and a pixel array including a first pixel configured to generate pixel signals based on the optical signal reflected from the target object, the first pixel including a first photo gate group having at least two photo gates that are configured to receive first gate signals with a first phase difference from the optical signal in a time interval and a second photo gate group having at least two photo gates configured to receive second gate signals with a second phase difference from the optical signal in the time interval, may be provided.

Abstract: A vehicle wheel including a wavelength tube member may include spokes, a cylindrical rim configured to connect both circumferential portions of the spokes, and a wavelength tube member accommodated on the rim between the first and second circumferential portions of the spokes and configured to cancel sound wave generated in a cavity formed between the rim and a tire, wherein the wavelength tube member may include a rim seating portion being in surface-contact with and accommodated on an external surface of the rim; and a plurality of wavelength tube portions formed on the rim seating portion.

Abstract: An image sensor includes unit pixels, and from among the unit pixels, a first unit pixel and a second unit pixel that are adjacent to each other each include a first tap having a first photo gate, to which a first signal having a first phase difference with respect to an optical signal is applied, and a second tap having a second photo gate, to which a second signal having a second phase difference with respect to the optical signal is applied. A location of the first tap in the first unit pixel and a location of the first tap in the second unit pixel, and a location of the second tap in the first unit pixel and a location of the second tap in the second unit pixel are symmetrical with each other based on one point between the first unit pixel and the second unit pixel.

Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

Abstract: An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.