Abstract: A depth sensor includes a substrate that includes a first face and a second face opposite to each other in a first direction; a photoelectric conversion element disposed in the substrate; and first and second taps connected to the photoelectric conversion element. Each of the first and second taps includes: a floating diffusion area disposed in the substrate; a transfer transistor connected to the floating diffusion area; a photo transistor connected to the photoelectric conversion element; a tap transfer transistor connected to the photo transistor; and a storage transistor connected to the tap transfer transistor and the transfer transistor. The storage transistor includes a storage gate electrode. The storage gate electrode includes a first extension and a second extension that extend from the first face of the substrate toward the second face, and the first extension and the second extension are spaced apart from each other in a second direction.

Abstract: A method of manufacturing a semiconductor package includes manufacturing dies on each of wafers, testing the wafers including the dies, calculating total scores for the wafers according to results of the tests, and setting reference values corresponding to semiconductor products. The method also includes classifying, as the semiconductor product, a selected wafer having a total score corresponding to a selected reference value among the reference values. The method further includes packaging the dies included in the selected wafer.

Abstract: A storage device detects an error of ROM data and corrects the error. The storage device includes a memory device and a memory controller for controlling the memory device. The memory device includes a plurality of planes each storing Read Only Memory (ROM) data, and a ROM data controller configured to control the plurality of planes based on whether the ROM data from all of the planes are the same. The memory controller includes an operation state determiner configured to output to the ROM data controller a ROM data output command for reading the ROM data respectively stored in the plurality of planes, according to an operation state of the memory device.

Abstract: Provided herein may be a memory controller configured to control a memory device for storing data. The memory controller may include: a voltage sensor configured to detect whether a level of a power supply voltage to be applied to the memory device and the memory controller is equal to or less than a reference level, and generate detect information; and a power controller configured to receive the detect information and output, to the memory device, a power supply voltage reset command for resetting the power supply voltage to be applied to the memory device, wherein the reference level is greater than the voltage level for initiating reset of the memory device and the memory controller and less than the voltage level required for the memory device and the memory controller to perform an operation.

Abstract: A storage device detects an error of ROM data and corrects the error. The storage device includes a memory device and a memory controller for controlling the memory device. The memory device includes a plurality of planes each storing Read Only Memory (ROM) data, and a ROM data controller configured to control the plurality of planes based on whether the ROM data from all of the planes are the same. The memory controller includes an operation state determiner configured to output to the ROM data controller a ROM data output command for reading the ROM data respectively stored in the plurality of planes, according to an operation state of the memory device.

Abstract: Provided herein may be a memory controller configured to control a memory device for storing data. The memory controller may include: a voltage sensor configured to detect whether a level of a power supply voltage to be applied to the memory device and the memory controller is equal to or less than a reference level, and generate detect information; and a power controller configured to receive the detect information and output, to the memory device, a power supply voltage reset command for resetting the power supply voltage to be applied to the memory device, wherein the reference level is greater than the voltage level for initiating reset of the memory device and the memory controller and less than the voltage level required for the memory device and the memory controller to perform an operation.

Abstract: A semiconductor device and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a gate stack comprising interlayer insulating layers and conductive patterns alternately stacked on each other, a channel hole passing through the gate stack, a memory layer formed on a sidewall of the channel hole, a channel layer formed on the memory layer, a core insulating layer filling a central region of the channel hole, and a capping layer formed on the core insulating layer and surrounded by an upper end of the channel layer. The capping layer has a conductive dopant and a growth inhibition impurity.

Abstract: A base material for a vehicle headliner is disclosed, which includes a core sheet made of a crosslinked polyolefin foam sheet, and reinforcing layers disposed on upper and lower portion of the core sheet and made of natural fiber and synthetic fiber.